Hsi-Jen Pan

408 total citations
29 papers, 317 citations indexed

About

Hsi-Jen Pan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Hsi-Jen Pan has authored 29 papers receiving a total of 317 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 6 papers in Condensed Matter Physics. Recurrent topics in Hsi-Jen Pan's work include Semiconductor Quantum Structures and Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Semiconductor materials and devices (13 papers). Hsi-Jen Pan is often cited by papers focused on Semiconductor Quantum Structures and Devices (20 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers) and Semiconductor materials and devices (13 papers). Hsi-Jen Pan collaborates with scholars based in Taiwan, China and United States. Hsi-Jen Pan's co-authors include Wen-Chau Liu, Kun‐Wei Lin, Shiou‐Ying Cheng, Huey-Ing Chen, Wen‐Shiung Lour, Kong-Beng Thei, Huey-Ing Chen, Chin-Chuan Cheng, Chao Cheng and Chun‐Yuan Chen and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Thin Solid Films.

In The Last Decade

Hsi-Jen Pan

28 papers receiving 308 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hsi-Jen Pan Taiwan 11 304 166 77 47 43 29 317
Abdur Rehman Jalil Germany 9 81 0.3× 128 0.8× 22 0.3× 104 2.2× 48 1.1× 31 233
Kong-Beng Thei Taiwan 11 249 0.8× 142 0.9× 19 0.2× 35 0.7× 47 1.1× 27 267
L. Treitinger Germany 11 350 1.2× 32 0.2× 29 0.4× 85 1.8× 85 2.0× 49 401
C. Detcheverry Netherlands 9 591 1.9× 32 0.2× 32 0.4× 49 1.0× 61 1.4× 20 603
Moslem Zare Iran 10 88 0.3× 128 0.8× 12 0.2× 211 4.5× 18 0.4× 20 285
Tianmin Zhou China 7 303 1.0× 151 0.9× 58 0.8× 19 0.4× 110 2.6× 12 346
I. S. Millard United Kingdom 8 522 1.7× 108 0.7× 7 0.1× 101 2.1× 15 0.3× 16 593
M. Rosenberger Germany 13 316 1.0× 112 0.7× 55 0.7× 25 0.5× 86 2.0× 28 361
R.A. Milano United States 13 373 1.2× 300 1.8× 3 0.0× 68 1.4× 66 1.5× 32 421
Hyo‐Jun Joo Singapore 12 291 1.0× 77 0.5× 56 0.7× 129 2.7× 106 2.5× 25 321

Countries citing papers authored by Hsi-Jen Pan

Since Specialization
Citations

This map shows the geographic impact of Hsi-Jen Pan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hsi-Jen Pan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hsi-Jen Pan more than expected).

Fields of papers citing papers by Hsi-Jen Pan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hsi-Jen Pan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hsi-Jen Pan. The network helps show where Hsi-Jen Pan may publish in the future.

Co-authorship network of co-authors of Hsi-Jen Pan

This figure shows the co-authorship network connecting the top 25 collaborators of Hsi-Jen Pan. A scholar is included among the top collaborators of Hsi-Jen Pan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hsi-Jen Pan. Hsi-Jen Pan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pan, Hsi-Jen, et al.. (2002). Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor. Electronics Letters. 38(2). 92–94. 13 indexed citations
3.
Pan, Hsi-Jen, et al.. (2001). Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures. Semiconductor Science and Technology. 17(1). 87–92. 5 indexed citations
4.
Liu, Wen-Chau, et al.. (2001). Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor. IEEE Transactions on Electron Devices. 48(9). 1938–1944. 64 indexed citations
5.
Liu, Wen-Chau, et al.. (2001). On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors. IEEE Transactions on Electron Devices. 48(6). 1054–1059. 9 indexed citations
6.
Pan, Hsi-Jen, et al.. (2001). Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor. Solid-State Electronics. 45(3). 489–494. 4 indexed citations
7.
Pan, Hsi-Jen, et al.. (2001). Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs). Superlattices and Microstructures. 29(2). 111–119. 2 indexed citations
8.
Liu, Wen-Chau, et al.. (2000). Temperature-dependent study of a lattice-matched InP/InGaAlAs heterojunction bipolar transistor. IEEE Electron Device Letters. 21(11). 524–527. 17 indexed citations
9.
Pan, Hsi-Jen, et al.. (2000). Observation of the resonant-tunnelling effect and temperature-dependent characteristics of an InP/InGaAs heterojunction bipolar transistor. Semiconductor Science and Technology. 15(9). 935–940. 6 indexed citations
10.
Liu, Wen-Chau, et al.. (2000). A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices. IEEE Electron Device Letters. 21(7). 344–346. 9 indexed citations
11.
Pan, Hsi-Jen, et al.. (2000). Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(2). 751–756. 2 indexed citations
12.
Pan, Hsi-Jen, et al.. (2000). Investigation of temperature-dependent performances of InP/In0.53Ga0.34Al0.13As heterojunction bipolar transistors. Semiconductor Science and Technology. 15(12). 1101–1106. 7 indexed citations
13.
Cheng, Shiou‐Ying, et al.. (2000). A new wide voltage operation regime double heterojunction bipolar transistor. Solid-State Electronics. 44(4). 581–585. 2 indexed citations
14.
Liu, Wen-Chau, et al.. (1999). Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors. Applied Physics Letters. 75(4). 572–574. 6 indexed citations
15.
Lour, Wen‐Shiung, et al.. (1999). High-performance InGaP/InxGa/sub 1-x/As HEMT with an inverted delta-doped V-shaped channel structure. IEEE Electron Device Letters. 20(11). 548–550. 18 indexed citations
16.
Cheng, Shiou‐Ying, et al.. (1999). Observation of the impulse-like negative-differential resistance of superlatticed resonant-tunneling transistor. Applied Physics Letters. 75(1). 133–135. 5 indexed citations
17.
Lour, Wen‐Shiung, et al.. (1999). Temperature-dependent investigation of a high-breakdown voltage and low-leakage current Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As pseudomorphic HEMT. IEEE Electron Device Letters. 20(6). 274–276. 18 indexed citations
18.
Liu, Wen-Chau, et al.. (1999). Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors. Applied Physics Letters. 74(14). 1996–1998. 3 indexed citations
19.
20.
Pan, Hsi-Jen, Kong-Beng Thei, Kun‐Wei Lin, et al.. (1999). High-performance double delta-doped sheets Ga0.51In0.49P/In0.15Ga0.85As/ Ga0.51In0.49P pseudomorphic heterostructure transistors. Semiconductor Science and Technology. 15(1). 1–6. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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