Hong Wang

4.1k total citations · 1 hit paper
222 papers, 3.4k citations indexed

About

Hong Wang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Hong Wang has authored 222 papers receiving a total of 3.4k indexed citations (citations by other indexed papers that have themselves been cited), including 113 papers in Electrical and Electronic Engineering, 73 papers in Atomic and Molecular Physics, and Optics and 71 papers in Condensed Matter Physics. Recurrent topics in Hong Wang's work include GaN-based semiconductor devices and materials (68 papers), Ga2O3 and related materials (27 papers) and Nonlinear Photonic Systems (22 papers). Hong Wang is often cited by papers focused on GaN-based semiconductor devices and materials (68 papers), Ga2O3 and related materials (27 papers) and Nonlinear Photonic Systems (22 papers). Hong Wang collaborates with scholars based in China, United States and Singapore. Hong Wang's co-authors include Tom Wu, Weili Yu, Feng Li, Chun Ma, Arif D. Sheikh, Weijin Hu, Quanbin Zhou, Xing Zhu, Xu Zong and Yingji He and has published in prestigious journals such as Angewandte Chemie International Edition, Nature Communications and The Journal of Chemical Physics.

In The Last Decade

Hong Wang

206 papers receiving 3.2k citations

Hit Papers

Ambipolar solution-processed hybrid perovskite phototrans... 2015 2026 2018 2022 2015 100 200 300 400 500

Peers

Hong Wang
Yilei Li China
Linhan Lin United States
Wan Y. Shih United States
Jia Li China
Michael A. Bevan United States
Yilei Li China
Hong Wang
Citations per year, relative to Hong Wang Hong Wang (= 1×) peers Yilei Li

Countries citing papers authored by Hong Wang

Since Specialization
Citations

This map shows the geographic impact of Hong Wang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hong Wang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hong Wang more than expected).

Fields of papers citing papers by Hong Wang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hong Wang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hong Wang. The network helps show where Hong Wang may publish in the future.

Co-authorship network of co-authors of Hong Wang

This figure shows the co-authorship network connecting the top 25 collaborators of Hong Wang. A scholar is included among the top collaborators of Hong Wang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hong Wang. Hong Wang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Huang, Huamao, et al.. (2024). Impact of composition and thickness of step-graded AlGaN barrier in AlGaN/GaN heterostructures. Materials Science in Semiconductor Processing. 178. 108460–108460. 2 indexed citations
2.
Liu, Xiaoyi, et al.. (2024). Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit. IEEE Transactions on Electron Devices. 71(5). 2943–2949. 3 indexed citations
3.
Wang, Hong, et al.. (2024). Investigation of DC and RF Characteristics of AlGaN/GaN HEMT With Various Planar Distributed Channel Division. IEEE Transactions on Electron Devices. 71(8). 4867–4873. 1 indexed citations
4.
Tang, Jun, et al.. (2024). Improvement of Threshold Voltage With ZrO2/HfO2 Gate Dielectric and CF4 Plasma Treatment on AlGaN/GaN HEMT. IEEE Electron Device Letters. 45(7). 1125–1128. 2 indexed citations
5.
Qin, Jian, et al.. (2024). Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment. IEEE Journal of the Electron Devices Society. 12. 104–112. 3 indexed citations
6.
Wang, Hong, Yue Wang, Jun Yin, et al.. (2023). Terbium-Doped CsPbI3 Glasses for High-Speed Visible-Light Communication. The Journal of Physical Chemistry C. 127(46). 22775–22783. 2 indexed citations
7.
Liu, Xiaoyi, et al.. (2023). A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter. IEEE Journal of the Electron Devices Society. 11. 503–509. 1 indexed citations
8.
Liu, Xiaoyi, et al.. (2023). Novel Stacked Passivation Structure for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit. IEEE Journal of the Electron Devices Society. 11. 130–134. 2 indexed citations
9.
Yao, Ruohe, et al.. (2023). Design of a broadband power amplifier based on high‐efficiency impedance space. International Journal of Circuit Theory and Applications. 51(8). 3968–3978. 3 indexed citations
10.
Qin, Jian, et al.. (2022). Effective Suppression of Current Collapse in AlGaN/GaN HEMT With N2O Plasma Treatment Followed by High Temperature Annealing in N2 Ambience. IEEE Journal of the Electron Devices Society. 10. 356–360. 8 indexed citations
11.
Wang, Yue, Hong Wang, Omar Alkhazragi, et al.. (2022). Two-Dimensional Hybrid Organic-Inorganic Perovskite Nanosheets for Gb/s Visible-Light Communication. IEEE Photonics Technology Letters. 34(14). 753–756. 12 indexed citations
12.
Zhu, Jiejie, Qing Zhu, Pengfei Wang, et al.. (2022). 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer. Applied Physics Letters. 120(5). 13 indexed citations
13.
Wang, Hong, et al.. (2021). Asymmetric Double Freeform Surface Lens for Integrated LED Automobile Headlamp. Micromachines. 12(6). 663–663. 4 indexed citations
14.
Wang, Hong, et al.. (2021). Improving in Light Power of AlGaN-Based UV-LED With ITO/Ag/Ga₂O₃ as Transparent Conductive Electrode. IEEE Photonics Technology Letters. 33(5). 251–254. 4 indexed citations
15.
Yu, Binhai, et al.. (2021). Luminous efficacy enhancement for LED lamps using highly reflective quantum dot-based photoluminescent films. Optics Express. 29(18). 29007–29007. 6 indexed citations
16.
Tan, Lijun, et al.. (2021). Characteristics of Micro-Size Light-Emitting Diode With Pentagon-Type Structure. IEEE Photonics Technology Letters. 33(19). 1077–1080. 5 indexed citations
17.
18.
Qin, Jian, et al.. (2018). Modeling of 2DEG characteristics of InxAl1−xN/AlN/GaN-Based HEMT Considering Polarization and Quantum Mechanical Effect. Electronics. 7(12). 410–410. 13 indexed citations
19.
Zhang, Qihui, Hong Wang, & Lingling Ji. (2009). Design method for rotational uniform illumination system with LED. Asia Communications and Photonics Conference and Exhibition. 1–2. 2 indexed citations
20.
Ng, Geok Ing, K. Radhakrishnan, & Hong Wang. (2005). Are we there yet? - a metamorphic HEMT and HBT perspective. 13–19. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Rankless by CCL
2026