Ho-Myoung An

824 total citations
44 papers, 717 citations indexed

About

Ho-Myoung An is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Ho-Myoung An has authored 44 papers receiving a total of 717 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 10 papers in Polymers and Plastics. Recurrent topics in Ho-Myoung An's work include Advanced Memory and Neural Computing (32 papers), Semiconductor materials and devices (27 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Ho-Myoung An is often cited by papers focused on Advanced Memory and Neural Computing (32 papers), Semiconductor materials and devices (27 papers) and Ferroelectric and Negative Capacitance Devices (22 papers). Ho-Myoung An collaborates with scholars based in South Korea, India and China. Ho-Myoung An's co-authors include Tae Geun Kim, Hee‐Dong Kim, Won-Ju Cho, Tukaram D. Dongale, Somnath S. Kundale, Min Yeong Song, Dae Yun Kang, Wenna Fan, Hyunsik Im and Bae Ho Park and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics D Applied Physics.

In The Last Decade

Ho-Myoung An

42 papers receiving 691 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Ho-Myoung An South Korea 17 662 217 209 135 43 44 717
Mangal Das India 12 415 0.6× 106 0.5× 133 0.6× 107 0.8× 17 0.4× 20 561
C. Mannequin France 14 490 0.7× 102 0.5× 145 0.7× 148 1.1× 20 0.5× 31 529
M.‐J. Tsai Taiwan 12 962 1.5× 131 0.6× 305 1.5× 116 0.9× 22 0.5× 43 1000
Chih‐Cheng Shih Taiwan 20 1.0k 1.5× 275 1.3× 295 1.4× 239 1.8× 15 0.3× 55 1.1k
M. Hasan South Korea 10 515 0.8× 188 0.9× 311 1.5× 53 0.4× 34 0.8× 18 588
Runchen Fang United States 11 535 0.8× 182 0.8× 133 0.6× 133 1.0× 10 0.2× 25 612
Hideyuki Noshiro Japan 11 812 1.2× 264 1.2× 231 1.1× 150 1.1× 15 0.3× 31 861
Damian Walczyk Germany 16 900 1.4× 136 0.6× 332 1.6× 202 1.5× 17 0.4× 22 996
Ching‐Chiun Wang Taiwan 12 599 0.9× 121 0.6× 253 1.2× 69 0.5× 11 0.3× 33 632
Godeuni Choi South Korea 12 729 1.1× 278 1.3× 197 0.9× 167 1.2× 9 0.2× 15 754

Countries citing papers authored by Ho-Myoung An

Since Specialization
Citations

This map shows the geographic impact of Ho-Myoung An's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ho-Myoung An with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ho-Myoung An more than expected).

Fields of papers citing papers by Ho-Myoung An

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ho-Myoung An. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ho-Myoung An. The network helps show where Ho-Myoung An may publish in the future.

Co-authorship network of co-authors of Ho-Myoung An

This figure shows the co-authorship network connecting the top 25 collaborators of Ho-Myoung An. A scholar is included among the top collaborators of Ho-Myoung An based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ho-Myoung An. Ho-Myoung An is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
An, Ho-Myoung, et al.. (2014). Solution-processed high-k thin films as a resistive switching for ReRAM applications. Current Applied Physics. 14(3). 462–466. 17 indexed citations
2.
Song, Min Yeong, et al.. (2013). Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods. Journal of Nanoscience and Nanotechnology. 13(9). 6212–6215. 2 indexed citations
3.
An, Ho-Myoung, et al.. (2013). Resistive switching phenomena of tungsten nitride thin films with excellent CMOS compatibility. Materials Research Bulletin. 48(12). 5080–5083. 14 indexed citations
4.
Yun, Min Ju, et al.. (2013). Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 31(4). 7 indexed citations
5.
6.
Kim, Hee‐Dong, et al.. (2013). Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells. IEEE Transactions on Device and Materials Reliability. 13(1). 252–257. 22 indexed citations
7.
Kim, Hee‐Dong, et al.. (2013). Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films. IEEE Electron Device Letters. 34(9). 1181–1183. 54 indexed citations
8.
An, Ho-Myoung, et al.. (2012). Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers. Microelectronic Engineering. 98. 347–350. 3 indexed citations
9.
10.
Kim, Hee‐Dong, Ho-Myoung An, & Tae Geun Kim. (2012). Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM Cells. IEEE Transactions on Electron Devices. 59(9). 2302–2307. 37 indexed citations
11.
An, Ho-Myoung, et al.. (2011). Improved Light Extraction from Large-Area Vertical Light-Emitting Diodes with Deep Hole-Patterns Using Nanosphere Lithography. Journal of Nanoscience and Nanotechnology. 11(12). 10339–10343. 1 indexed citations
12.
Kim, Hee‐Dong, et al.. (2011). Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices. IEEE Transactions on Electron Devices. 58(10). 3566–3573. 93 indexed citations
13.
An, Ho-Myoung, et al.. (2011). Multilevel programming at a low-voltage step using junction avalanche hot carrier injections. Applied Physics Letters. 98(15). 3 indexed citations
14.
An, Ho-Myoung, et al.. (2011). High-speed and low-voltage performance in a charge-trapping flash memory using a NiO tunnel junction. Journal of Physics D Applied Physics. 44(15). 155105–155105. 6 indexed citations
15.
16.
An, Ho-Myoung, et al.. (2010). A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms. IEEE Transactions on Electron Devices. 57(10). 2398–2404. 11 indexed citations
17.
18.
An, Ho-Myoung, et al.. (2009). Negative-/Positive-Bias-Instability Analysis of the Memory Characteristics Improved by Hydrogen Postannealing in MANOS Capacitors. IEEE Transactions on Device and Materials Reliability. 10(2). 295–300. 5 indexed citations
19.
Lee, Sang‐Eun, et al.. (2007). Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory. Solid-State Electronics. 51(7). 1009–1013. 1 indexed citations
20.
Lee, Sang‐Eun, et al.. (2007). Quantitative analysis of chemical compositions in ultra-thin oxide–nitride–oxide stacked films having wet oxidized blocking layer. Thin Solid Films. 515(17). 6915–6920. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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