Hojeong Ryu

506 total citations
19 papers, 443 citations indexed

About

Hojeong Ryu is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Polymers and Plastics. According to data from OpenAlex, Hojeong Ryu has authored 19 papers receiving a total of 443 indexed citations (citations by other indexed papers that have themselves been cited), including 19 papers in Electrical and Electronic Engineering, 11 papers in Cellular and Molecular Neuroscience and 4 papers in Polymers and Plastics. Recurrent topics in Hojeong Ryu's work include Advanced Memory and Neural Computing (19 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Neuroscience and Neural Engineering (11 papers). Hojeong Ryu is often cited by papers focused on Advanced Memory and Neural Computing (19 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Neuroscience and Neural Engineering (11 papers). Hojeong Ryu collaborates with scholars based in South Korea and Pakistan. Hojeong Ryu's co-authors include Sungjun Kim, Chandreswar Mahata, Jongmin Park, Muhammad Ismail, Jun‐Hyeok Choi, Seongjae Cho, Muhammad Imran, Yoon Kim, R.M. Arif Khalil and Fayyaz Hussain and has published in prestigious journals such as Scientific Reports, ACS Applied Materials & Interfaces and Journal of Alloys and Compounds.

In The Last Decade

Hojeong Ryu

18 papers receiving 436 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hojeong Ryu South Korea 11 436 233 80 71 64 19 443
Moritz von Witzleben Germany 10 437 1.0× 192 0.8× 37 0.5× 80 1.1× 70 1.1× 13 470
Yixuan Jiao China 4 375 0.9× 187 0.8× 75 0.9× 44 0.6× 83 1.3× 6 393
Manu V Nair Switzerland 6 355 0.8× 122 0.5× 79 1.0× 101 1.4× 83 1.3× 8 366
Matteo Farronato Italy 9 325 0.7× 96 0.4× 89 1.1× 73 1.0× 43 0.7× 19 348
Dongyeol Ju South Korea 11 312 0.7× 146 0.6× 90 1.1× 78 1.1× 35 0.5× 34 325
N. Ghenzi Argentina 14 367 0.8× 130 0.6× 44 0.6× 72 1.0× 90 1.4× 35 382
Hyunsang Hwang South Korea 15 684 1.6× 254 1.1× 57 0.7× 74 1.0× 146 2.3× 26 703
Sandip Lashkare India 10 388 0.9× 117 0.5× 60 0.8× 59 0.8× 58 0.9× 46 398
Simone Cortese United Kingdom 8 336 0.8× 171 0.7× 20 0.3× 47 0.7× 64 1.0× 8 346
Maria Trapatseli United Kingdom 8 370 0.8× 176 0.8× 20 0.3× 52 0.7× 87 1.4× 10 397

Countries citing papers authored by Hojeong Ryu

Since Specialization
Citations

This map shows the geographic impact of Hojeong Ryu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hojeong Ryu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hojeong Ryu more than expected).

Fields of papers citing papers by Hojeong Ryu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hojeong Ryu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hojeong Ryu. The network helps show where Hojeong Ryu may publish in the future.

Co-authorship network of co-authors of Hojeong Ryu

This figure shows the co-authorship network connecting the top 25 collaborators of Hojeong Ryu. A scholar is included among the top collaborators of Hojeong Ryu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hojeong Ryu. Hojeong Ryu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Kim, Seung‐Hyun, Osung Kwon, Hojeong Ryu, & Sungjun Kim. (2021). Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process. Metals. 11(5). 772–772. 4 indexed citations
2.
Park, Jongmin, Hojeong Ryu, & Sungjun Kim. (2021). Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system. Scientific Reports. 11(1). 16601–16601. 42 indexed citations
3.
Mahata, Chandreswar, et al.. (2021). Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures. Coatings. 11(4). 451–451. 5 indexed citations
4.
Ryu, Hojeong & Sungjun Kim. (2021). Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Device. Metals. 11(8). 1207–1207. 10 indexed citations
5.
Ryu, Hojeong & Sungjun Kim. (2021). Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Device. Metals. 11(8). 1199–1199. 2 indexed citations
6.
7.
Ryu, Hojeong & Sungjun Kim. (2021). Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification. Chaos Solitons & Fractals. 150. 111223–111223. 51 indexed citations
8.
Ryu, Hojeong, et al.. (2021). Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing. ACS Applied Materials & Interfaces. 13(28). 33244–33252. 70 indexed citations
9.
Ryu, Hojeong, et al.. (2021). Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device. Chaos Solitons & Fractals. 145. 110783–110783. 24 indexed citations
10.
Ryu, Hojeong & Sungjun Kim. (2021). Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Device. Metals. 11(3). 440–440. 21 indexed citations
11.
Ryu, Hojeong & Sungjun Kim. (2021). Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAM. Metals. 11(9). 1350–1350. 9 indexed citations
12.
Ryu, Hojeong, Chandreswar Mahata, R.M. Arif Khalil, et al.. (2021). Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications. Journal of Alloys and Compounds. 877. 160204–160204. 29 indexed citations
13.
Ryu, Hojeong & Sungjun Kim. (2021). Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrode. Metals. 11(4). 653–653. 16 indexed citations
14.
Ryu, Hojeong, et al.. (2021). Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Device. Metals. 11(12). 1885–1885. 1 indexed citations
15.
Ryu, Hojeong & Sungjun Kim. (2020). Pseudo-Interface Switching of a Two-Terminal TaOx/HfO2 Synaptic Device for Neuromorphic Applications. Nanomaterials. 10(8). 1550–1550. 41 indexed citations
16.
Ryu, Hojeong & Sungjun Kim. (2020). Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Device. Nanomaterials. 10(11). 2159–2159. 62 indexed citations
17.
Ryu, Hojeong, Jun‐Hyeok Choi, & Sungjun Kim. (2020). Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM. Metals. 10(11). 1410–1410. 25 indexed citations
18.
Ryu, Hojeong & Sungjun Kim. (2020). Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot. Nanomaterials. 10(12). 2462–2462. 4 indexed citations
19.
Ryu, Hojeong & Sungjun Kim. (2020). Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack. Nanomaterials. 10(10). 2055–2055. 27 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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