Haruhiro Oigawa

2.0k total citations
59 papers, 1.7k citations indexed

About

Haruhiro Oigawa is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Surfaces, Coatings and Films. According to data from OpenAlex, Haruhiro Oigawa has authored 59 papers receiving a total of 1.7k indexed citations (citations by other indexed papers that have themselves been cited), including 51 papers in Atomic and Molecular Physics, and Optics, 40 papers in Electrical and Electronic Engineering and 9 papers in Surfaces, Coatings and Films. Recurrent topics in Haruhiro Oigawa's work include Semiconductor materials and interfaces (27 papers), Semiconductor materials and devices (23 papers) and Semiconductor Quantum Structures and Devices (14 papers). Haruhiro Oigawa is often cited by papers focused on Semiconductor materials and interfaces (27 papers), Semiconductor materials and devices (23 papers) and Semiconductor Quantum Structures and Devices (14 papers). Haruhiro Oigawa collaborates with scholars based in Japan, South Korea and Germany. Haruhiro Oigawa's co-authors include Yasuo Nannichi, Jia-Fa Fan, Masaharu Oshima, Hirohiko Sugahara, Hidemi Shigekawa, Atsushi Koma, Osamu Takeuchi, Shoji Yoshida, Koichiro Saiki and Koji Miyake and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Haruhiro Oigawa

59 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Haruhiro Oigawa Japan 21 1.3k 1.2k 372 299 200 59 1.7k
F. Patella Italy 25 1.1k 0.8× 655 0.5× 522 1.4× 196 0.7× 206 1.0× 87 1.4k
E. Landemark Sweden 21 1.4k 1.1× 774 0.6× 475 1.3× 500 1.7× 163 0.8× 32 1.7k
K. W. Haberern United States 14 1.2k 0.9× 768 0.6× 425 1.1× 207 0.7× 214 1.1× 25 1.5k
Yasuo Nannichi Japan 27 1.7k 1.3× 1.8k 1.5× 461 1.2× 345 1.2× 235 1.2× 90 2.3k
M. Prietsch Germany 19 906 0.7× 600 0.5× 184 0.5× 258 0.9× 138 0.7× 40 1.1k
M. J. Ashwin United Kingdom 20 1.0k 0.8× 971 0.8× 482 1.3× 130 0.4× 166 0.8× 84 1.5k
C. J. Karlsson Sweden 13 874 0.7× 543 0.5× 297 0.8× 421 1.4× 86 0.4× 16 1.2k
D.I. Westwood United Kingdom 22 1.2k 0.9× 1.0k 0.8× 373 1.0× 134 0.4× 151 0.8× 114 1.5k
In‐Whan Lyo United States 16 1.2k 0.9× 708 0.6× 413 1.1× 155 0.5× 322 1.6× 24 1.5k
J. J. Paggel Germany 23 1.3k 1.0× 507 0.4× 585 1.6× 207 0.7× 160 0.8× 74 1.6k

Countries citing papers authored by Haruhiro Oigawa

Since Specialization
Citations

This map shows the geographic impact of Haruhiro Oigawa's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Haruhiro Oigawa with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Haruhiro Oigawa more than expected).

Fields of papers citing papers by Haruhiro Oigawa

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Haruhiro Oigawa. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Haruhiro Oigawa. The network helps show where Haruhiro Oigawa may publish in the future.

Co-authorship network of co-authors of Haruhiro Oigawa

This figure shows the co-authorship network connecting the top 25 collaborators of Haruhiro Oigawa. A scholar is included among the top collaborators of Haruhiro Oigawa based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Haruhiro Oigawa. Haruhiro Oigawa is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yoshida, Shoji, Yuta Aizawa, Zihan Wang, et al.. (2014). Probing ultrafast spin dynamics with optical pump–probe scanning tunnelling microscopy. Nature Nanotechnology. 9(8). 588–593. 78 indexed citations
2.
Miyashita, Naoya, Haruhiro Oigawa, & Yoshitaka Okada. (2010). Effect of Antimony on Electron Trap Density in GaInNAsSb Solar Cell Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy. EU PVSEC. 946–949. 1 indexed citations
3.
Yoshida, Shoji, et al.. (2006). Tip-induced band bending and its effect on local barrier height measurement studied by light-modulated scanning tunneling spectroscopy. e-Journal of Surface Science and Nanotechnology. 4. 192–196. 20 indexed citations
4.
Yoshida, Shoji, Tomohiko Kimura, Osamu Takeuchi, et al.. (2004). Probe effect in scanning tunneling microscopy onSi(001)low-temperature phases. Physical Review B. 70(23). 35 indexed citations
5.
Takeuchi, Osamu, et al.. (2003). Si(111)‐7×7表面に吸着したKr原子の特徴的な単位内及び単位間相互作用. Physical Review B. 68(3). 1–33301. 20 indexed citations
6.
Oigawa, Haruhiro, Hidemi Shigekawa, & Yasuo Nannichi. (1995). Surface Passivation of III-V Compound Semiconductors with Chalcogen Atoms. Materials science forum. 185-188. 191–198. 2 indexed citations
7.
Shigekawa, Hidemi, Koji Miyake, M. Ishida, et al.. (1995). Surface superstructures of quasi-one-dimensional organic conductor β-(BEDT-TTF)2PF6crystal studied by scanning tunneling microscopy. Physical review. B, Condensed matter. 52(23). 16361–16364. 6 indexed citations
8.
Shigekawa, Hidemi, Haruhiro Oigawa, Koji Miyake, et al.. (1994). Selenium-treated GaAs(001)-2×3 surface studied by scanning tunneling microscopy. Applied Physics Letters. 65(5). 607–609. 13 indexed citations
9.
Shigekawa, Hidemi, Haruhiro Oigawa, Koji Miyake, et al.. (1994). Surface structures of GaAs passivated by chalcogen atoms. Applied Surface Science. 75(1-4). 169–174. 6 indexed citations
10.
Sugahara, Hirohiko, Masaharu Oshima, Haruhiro Oigawa, & Yasuo Nannichi. (1993). Chemistry of S/GaAs and metal/S/GaAs systems. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 11(1). 52–57. 27 indexed citations
11.
Sugahara, Hirohiko, Masaharu Oshima, Haruhiro Oigawa, & Yasuo Nannichi. (1992). Chemistry and structure of GaAs surfaces cleaned by sulfur annealing. Thin Solid Films. 220(1-2). 212–216. 6 indexed citations
12.
Katayama, Mitsuhiro, Masakazu Aono, Haruhiro Oigawa, et al.. (1991). Surface Structure of InAs (001) Treated with (NH4)2Sx Solution. Japanese Journal of Applied Physics. 30(5A). L786–L786. 28 indexed citations
13.
Shigekawa, Hidemi, Tomihiro Hashizume, Haruhiro Oigawa, et al.. (1991). Surface structure of selenium-treated GaAs (001) studied by field ion scanning tunneling microscopy. Applied Physics Letters. 59(23). 2986–2988. 10 indexed citations
14.
Lee, Jong‐Lam, Long Wei, Shoichiro Tanigawa, Haruhiro Oigawa, & Yasuo Nannichi. (1991). Effect of (NH4)2Sx treatment on the passivation of GaP surface. Journal of Applied Physics. 70(5). 2877–2879. 5 indexed citations
15.
Lee, Jong‐Lam, Long Wei, Shoichiro Tanigawa, Haruhiro Oigawa, & Yasuo Nannichi. (1991). Evidence for the passivation effect in (NH4)2Sx-treated GaAs observed by slow positrons. Applied Physics Letters. 58(11). 1167–1169. 34 indexed citations
16.
Lee, Jong‐Lam, Long Wei, Shoichiro Tanigawa, Haruhiro Oigawa, & Yasuo Nannichi. (1991). The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam. Japanese Journal of Applied Physics. 30(2A). L138–L138. 5 indexed citations
17.
Hirayama, Hiroyuki, Yoshishige Matsumoto, Haruhiro Oigawa, & Yasuo Nannichi. (1989). Reflection high-energy electron diffraction and x-ray photoelectron spectroscopic study on (NH4)2Sx-treated GaAs (100) surfaces. Applied Physics Letters. 54(25). 2565–2567. 52 indexed citations
18.
Fan, Jia-Fa, Haruhiro Oigawa, & Yasuo Nannichi. (1988). Metal-Dependent Schottky Barrier Height with the (NH_4)_2S_x-Treated GaAs : Semiconductors and Semiconductor Devices. Japanese Journal of Applied Physics. 27(11). 2 indexed citations
19.
Nannichi, Yasuo, Jia-Fa Fan, Haruhiro Oigawa, & Atsushi Koma. (1988). A Model to Explain the Effective Passivation of the GaAs Surface by (NH_4)_2S_x Treatment : Semiconductors and Semiconductor Devices. Japanese Journal of Applied Physics. 27(12). 1 indexed citations
20.
Fan, Jia-Fa, Haruhiro Oigawa, & Yasuo Nannichi. (1988). The Effect of (NH_4)_2S Treatment on the Interface Characteristics of GaAs MIS Structures : Semiconductors and Semiconductors Devices. Japanese Journal of Applied Physics. 27(7). 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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