Harry Chuang

714 total citations
26 papers, 470 citations indexed

About

Harry Chuang is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computer Networks and Communications. According to data from OpenAlex, Harry Chuang has authored 26 papers receiving a total of 470 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 3 papers in Computer Networks and Communications. Recurrent topics in Harry Chuang's work include Ferroelectric and Negative Capacitance Devices (14 papers), Semiconductor materials and devices (12 papers) and Magnetic properties of thin films (8 papers). Harry Chuang is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (14 papers), Semiconductor materials and devices (12 papers) and Magnetic properties of thin films (8 papers). Harry Chuang collaborates with scholars based in Taiwan and United States. Harry Chuang's co-authors include Yi-Chun Shih, Yu-Der Chih, Chia-Fu Lee, Po-Hao Lee, Tsung-Yung Jonathan Chang, Kuei‐Hung Shen, Ruo‐Qian Wang, Chieh-Pu Lo, W. J. Gallagher and Yulin Chen and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Electron Devices and 2021 IEEE International Electron Devices Meeting (IEDM).

In The Last Decade

Harry Chuang

24 papers receiving 440 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Harry Chuang Taiwan 14 408 169 38 37 36 26 470
Manu Perumkunnil Belgium 11 321 0.8× 152 0.9× 42 1.1× 77 2.1× 43 1.2× 42 407
Kumiko Nomura Japan 10 303 0.7× 131 0.8× 34 0.9× 45 1.2× 32 0.9× 34 360
Po-Hao Lee Taiwan 9 481 1.2× 110 0.7× 27 0.7× 89 2.4× 45 1.3× 9 550
Mohit Gupta Belgium 14 559 1.4× 121 0.7× 20 0.5× 85 2.3× 34 0.9× 45 645
Yong-Min Ju South Korea 5 455 1.1× 95 0.6× 18 0.5× 25 0.7× 55 1.5× 10 511
Taehui Na South Korea 15 552 1.4× 219 1.3× 53 1.4× 78 2.1× 40 1.1× 41 598
Sungmeen Myung South Korea 6 463 1.1× 94 0.6× 17 0.4× 59 1.6× 54 1.5× 9 526
Y. Noguchi Japan 13 245 0.6× 235 1.4× 77 2.0× 28 0.8× 89 2.5× 23 369
Seung Keun Yoon South Korea 6 401 1.0× 95 0.6× 17 0.4× 25 0.7× 57 1.6× 11 494
Takashi Ohsawa Japan 17 713 1.7× 203 1.2× 36 0.9× 89 2.4× 28 0.8× 73 778

Countries citing papers authored by Harry Chuang

Since Specialization
Citations

This map shows the geographic impact of Harry Chuang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Harry Chuang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Harry Chuang more than expected).

Fields of papers citing papers by Harry Chuang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Harry Chuang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Harry Chuang. The network helps show where Harry Chuang may publish in the future.

Co-authorship network of co-authors of Harry Chuang

This figure shows the co-authorship network connecting the top 25 collaborators of Harry Chuang. A scholar is included among the top collaborators of Harry Chuang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Harry Chuang. Harry Chuang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
2.
Li, Huijun, Kai‐Chun Chang, Chung‐Che Huang, et al.. (2024). A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low Ron*Coff for mmWave. 1–2. 2 indexed citations
5.
Chen, Chia‐Hsiang, Chia-Yu Wang, Yuan-Jen Lee, et al.. (2021). Reliability and magnetic immunity of reflow-capable embedded STT-MRAM in 16nm FinFET CMOS process. Symposium on VLSI Technology. 1–2. 5 indexed citations
6.
Chih, Yu-Der, Chung-Cheng Chou, Yi-Chun Shih, et al.. (2021). Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications. 2021 IEEE International Electron Devices Meeting (IEDM). 2.4.1–2.4.4. 23 indexed citations
8.
9.
Yang, Yu-Tao, et al.. (2020). An Approach to Embedding Traditional Non-Volatile Memories into a Deep Sub-Micron CMOS. 1–2. 1 indexed citations
10.
Shih, Yi-Chun, Chia-Fu Lee, Po-Hao Lee, et al.. (2020). A Reflow-capable, Embedded 8Mb STT-MRAM Macro with 9nS Read Access Time in 16nm FinFET Logic CMOS Process. 35 indexed citations
12.
Gallagher, W. J., Jiancheng Huang, George Lee, et al.. (2019). 22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options. 2.7.1–2.7.4. 54 indexed citations
13.
Gallagher, W. J., Jiancheng Huang, George Lee, et al.. (2019). Recent Progress and Next Directions for Embedded MRAM Technology. T190–T191. 13 indexed citations
14.
Shih, Yi-Chun, Chia-Fu Lee, Po-Hao Lee, et al.. (2019). Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub-$\mu$ A Sensing Resolution, and 17.5-nS Read Access Time. IEEE Journal of Solid-State Circuits. 54(4). 1029–1038. 32 indexed citations
15.
Gallagher, W. J., Jiancheng Huang, George Lee, et al.. (2019). Recent Progress and Next Directions for Embedded MRAM Technology. T190–T191. 20 indexed citations
17.
Wang, Chia-Yu, Luc Thomas, Yuan-Jen Lee, et al.. (2017). Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow. 21.1.1–21.1.4. 6 indexed citations
18.
Guo, Wei, Jiayun Shen, Y. Yasuda, et al.. (2007). 45nm High-k/Metal-Gate CMOS Technology for GPU/NPU Applications with Highest PFET Performance. 285–288. 9 indexed citations
20.
White, T., et al.. (1998). Self-aligned silicide process technology for sub-0.25-μm geometries. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3506. 112–112. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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