Hal Edwards

1.8k total citations
63 papers, 1.4k citations indexed

About

Hal Edwards is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Hal Edwards has authored 63 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Electrical and Electronic Engineering, 27 papers in Atomic and Molecular Physics, and Optics and 13 papers in Materials Chemistry. Recurrent topics in Hal Edwards's work include Semiconductor materials and devices (22 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Hal Edwards is often cited by papers focused on Semiconductor materials and devices (22 papers), Integrated Circuits and Semiconductor Failure Analysis (17 papers) and Advancements in Semiconductor Devices and Circuit Design (17 papers). Hal Edwards collaborates with scholars based in United States, Belgium and France. Hal Edwards's co-authors include Alex de Lozanne, J. T. Markert, Seongkwan Mark Lee, Gangyi Hu, Alicia Barr, Qian Niu, A.J. Melmed, W. M. Duncan, S. Fang and C. R. Helms and has published in prestigious journals such as Physical Review Letters, Nature Communications and Physical review. B, Condensed matter.

In The Last Decade

Hal Edwards

63 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hal Edwards United States 17 667 537 405 362 305 63 1.4k
D. Ebling Germany 22 508 0.8× 718 1.3× 659 1.6× 181 0.5× 199 0.7× 57 1.4k
Richard Arès Canada 22 769 1.2× 1.3k 2.5× 462 1.1× 133 0.4× 441 1.4× 147 1.7k
Mika Prunnila Finland 24 567 0.9× 739 1.4× 682 1.7× 129 0.4× 473 1.6× 110 1.6k
Takashi Komine Japan 20 530 0.8× 142 0.3× 727 1.8× 142 0.4× 206 0.7× 130 1.2k
Xavier Cartoixà Spain 26 674 1.0× 899 1.7× 885 2.2× 173 0.5× 276 0.9× 91 1.8k
S. Bouchoule France 26 1.4k 2.0× 1.6k 2.9× 382 0.9× 182 0.5× 656 2.2× 155 2.3k
H. Hölscher Germany 23 1.4k 2.2× 528 1.0× 310 0.8× 79 0.2× 509 1.7× 52 1.7k
D. L. Rode United States 20 1.2k 1.8× 1.2k 2.2× 636 1.6× 296 0.8× 193 0.6× 62 1.8k
A. V. Scherbakov Russia 19 931 1.4× 489 0.9× 280 0.7× 85 0.2× 306 1.0× 70 1.2k
R. Grousson France 20 1.2k 1.8× 665 1.2× 405 1.0× 72 0.2× 237 0.8× 65 1.6k

Countries citing papers authored by Hal Edwards

Since Specialization
Citations

This map shows the geographic impact of Hal Edwards's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hal Edwards with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hal Edwards more than expected).

Fields of papers citing papers by Hal Edwards

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hal Edwards. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hal Edwards. The network helps show where Hal Edwards may publish in the future.

Co-authorship network of co-authors of Hal Edwards

This figure shows the co-authorship network connecting the top 25 collaborators of Hal Edwards. A scholar is included among the top collaborators of Hal Edwards based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hal Edwards. Hal Edwards is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saadat, Ali, et al.. (2024). Determining the Performance Limits of LDMOS With Three Common Types of Field Oxides. IEEE Transactions on Electron Devices. 71(4). 2315–2321. 5 indexed citations
2.
Oyekan, Kolade A., et al.. (2024). Two-Dimensional Oxyhalides for Power Electronics. 1. 151–159. 1 indexed citations
3.
Edwards, Hal, et al.. (2023). Empirical test of the Kelvin relation in a Bi2Te3 thermopile. Applied Physics Letters. 122(12). 2 indexed citations
4.
Saadat, Ali, et al.. (2023). Algorithmic Optimization of Transistors Applied to Silicon LDMOS. IEEE Access. 11. 64160–64169. 6 indexed citations
5.
Edwards, Hal, et al.. (2023). Silicon Microthermoelectric Coolers for Local Heat Removal in Integrated Circuit Chips. IEEE Transactions on Electron Devices. 70(10). 5505–5508. 2 indexed citations
6.
Edwards, Hal, et al.. (2022). Microelectronic Angular Displacement Sensor With Near Hemispherical Linear Field-of-View. IEEE Sensors Journal. 22(5). 4051–4056. 1 indexed citations
7.
Edwards, Hal, et al.. (2022). Independent determination of Peltier coefficient in thermoelectric devices. Applied Physics Letters. 120(18). 4 indexed citations
8.
Saadat, Ali, Maarten L. Van de Put, Hal Edwards, & William G. Vandenberghe. (2022). LDMOS Drift Region With Field Oxides: Figure-of-Merit Derivation and Verification. IEEE Journal of the Electron Devices Society. 10. 361–366. 7 indexed citations
9.
Hu, Gangyi, et al.. (2019). Scaling of Power Generation With Dopant Density in Integrated Circuit Silicon Thermoelectric Generators. IEEE Electron Device Letters. 40(12). 1917–1920. 7 indexed citations
10.
Hu, Gangyi, et al.. (2018). Extinction of random telegraph switching in small area silicon metal-oxide-semiconductor transistors. Journal of Applied Physics. 124(6). 1 indexed citations
11.
Hu, Gangyi, et al.. (2017). Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors. Applied Physics Letters. 111(15). 1 indexed citations
12.
Lee, Seongkwan Mark, et al.. (2014). Negative Differential Transconductance in Silicon CMOS Quantum Well Field Effect Transistors. Bulletin of the American Physical Society. 2014. 1 indexed citations
13.
Lee, Seongkwan Mark, et al.. (2014). Negative differential transconductance in silicon quantum well metal-oxide-semiconductor field effect/bipolar hybrid transistors. Applied Physics Letters. 105(21). 10 indexed citations
14.
Salman, Akram, et al.. (2013). Mutual ballasting: A novel technique for improved inductive system level IEC ESD stress performance for automotive applications. Electrical Overstress/Electrostatic Discharge Symposium. 9 indexed citations
15.
Mahaffy, Rachel, Chih‐Kang Shih, & Hal Edwards. (2000). Comparative study of two-dimensional junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 18(1). 566–571. 3 indexed citations
16.
Ukraintsev, Vladimir A., et al.. (1998). Silicon surface preparation for two-dimensional dopant characterization. 736–740. 8 indexed citations
17.
Lozanne, Alex de, Hal Edwards, Chunhao Yuan, & J. T. Markert. (1998). Scanning Probe Microscopy and Spectroscopy of High Temperature Superconductors. Acta Physica Polonica A. 93(2). 333–342. 2 indexed citations
18.
Wilk, G. D., Yi Wei, Hal Edwards, & Robert M. Wallace. (1997). In situ Si flux cleaning technique for producing atomically flat Si(100) surfaces at low temperature. Applied Physics Letters. 70(17). 2288–2290. 31 indexed citations
19.
Edwards, Hal, Qian Niu, G. A. Georgakis, & Alex de Lozanne. (1995). Cryogenic cooling using tunneling structures with sharp energy features. Physical review. B, Condensed matter. 52(8). 5714–5736. 67 indexed citations
20.
Edwards, Hal, J. T. Markert, & Alex de Lozanne. (1992). Energy gap and surface structure ofYBa2Cu3O7−xprobed by scanning tunneling microscopy. Physical Review Letters. 69(20). 2967–2970. 136 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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