Ge‐Qi Mao

610 total citations
16 papers, 437 citations indexed

About

Ge‐Qi Mao is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Ge‐Qi Mao has authored 16 papers receiving a total of 437 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 3 papers in Polymers and Plastics. Recurrent topics in Ge‐Qi Mao's work include Ferroelectric and Negative Capacitance Devices (13 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor materials and devices (8 papers). Ge‐Qi Mao is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (13 papers), Advanced Memory and Neural Computing (9 papers) and Semiconductor materials and devices (8 papers). Ge‐Qi Mao collaborates with scholars based in China, Singapore and United States. Ge‐Qi Mao's co-authors include Kan‐Hao Xue, Xiangshui Miao, Jun‐Hui Yuan, Huajun Sun, Qi Liu, Wei Wu, Shibing Long, Lihua Wang, Guangwei Xu and Ying Zhang and has published in prestigious journals such as Nature Communications, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Ge‐Qi Mao

16 papers receiving 427 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Ge‐Qi Mao China	9	397	198	93	40	28	16	437
Sandhyarani Sahoo India	10	259 0.7×	152 0.8×	79 0.8×	49 1.2×	33 1.2×	15	322
Hasita Veluri Singapore	6	355 0.9×	168 0.8×	78 0.8×	46 1.1×	30 1.1×	14	397
Sameer Kumar Mallik India	12	340 0.9×	197 1.0×	104 1.1×	59 1.5×	40 1.4×	23	416
Mousam Charan Sahu India	11	324 0.8×	186 0.9×	107 1.2×	59 1.5×	39 1.4×	19	397
Maheswari Sivan Singapore	9	437 1.1×	202 1.0×	103 1.1×	53 1.3×	33 1.2×	16	488
Wenjuan Ci China	9	274 0.7×	170 0.9×	61 0.7×	41 1.0×	47 1.7×	10	341
Yaqing Shen Saudi Arabia	11	338 0.9×	141 0.7×	100 1.1×	54 1.4×	17 0.6×	17	389
Tanmay Chavan United States	7	217 0.5×	134 0.7×	55 0.6×	24 0.6×	29 1.0×	15	305
Eunpyo Park South Korea	10	224 0.6×	177 0.9×	41 0.4×	29 0.7×	25 0.9×	21	309

Countries citing papers authored by Ge‐Qi Mao

Since Specialization

Citations

This map shows the geographic impact of Ge‐Qi Mao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ge‐Qi Mao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ge‐Qi Mao more than expected).

Fields of papers citing papers by Ge‐Qi Mao

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ge‐Qi Mao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ge‐Qi Mao. The network helps show where Ge‐Qi Mao may publish in the future.

Co-authorship network of co-authors of Ge‐Qi Mao

This figure shows the co-authorship network connecting the top 25 collaborators of Ge‐Qi Mao. A scholar is included among the top collaborators of Ge‐Qi Mao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ge‐Qi Mao. Ge‐Qi Mao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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16 of 16 papers shown

Mao, Ge‐Qi, et al.. (2024). Unique switching mode of HfO₂ among fluorite-type ferroelectric candidates. Journal of Materials Chemistry C. 12(38). 15463–15474. 1 indexed citations

Mao, Ge‐Qi, Yu Zhang, Jiayi Sun, et al.. (2024). Interface modeling analysis using density functional theory in highly reliable Pt/HfO2/TaOx/Ta self-rectifying memristor. Applied Physics Letters. 125(12). 2 indexed citations

Yu, Heng, Kan‐Hao Xue, Ge‐Qi Mao, et al.. (2024). Phase transitions in typical fluorite-type ferroelectrics. Applied Physics Letters. 125(10). 1 indexed citations

Mao, Ge‐Qi, et al.. (2023). In search of Pca2₁ phase ferroelectrics. Journal of Physics Materials. 6(2). 24001–24001. 3 indexed citations

Huang, Jinhai, Ge‐Qi Mao, Kan‐Hao Xue, et al.. (2023). Impact of Zr substitution on the electronic structure of ferroelectric hafnia. Journal of Applied Physics. 133(18). 7 indexed citations

Mao, Ge‐Qi, et al.. (2022). DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity. Journal of Physics Condensed Matter. 34(40). 403001–403001. 37 indexed citations

Wang, Chengxu, Ge‐Qi Mao, Jun‐Hui Yuan, et al.. (2022). HfO_x/AlO_y Superlattice‐Like Memristive Synapse. Advanced Science. 9(21). e2201446–e2201446. 47 indexed citations

Yuan, Jun‐Hui, Ge‐Qi Mao, Kan‐Hao Xue, et al.. (2022). Ferroelectricity in HfO₂ from a Coordination Number Perspective. Chemistry of Materials. 35(1). 94–103. 26 indexed citations

Yuan, Peng, Ge‐Qi Mao, Yan Cheng, et al.. (2022). Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics. Nano Research. 15(4). 3667–3674. 45 indexed citations

10.

Xue, Kan‐Hao, et al.. (2022). Hafnia for analog memristor: Influence of stoichiometry and crystalline structure. Physical Review Materials. 6(8). 8 indexed citations

11.

Xue, Kan‐Hao, Jinhai Huang, Jun‐Hui Yuan, et al.. (2022). Designing Wake‐Up Free Ferroelectric Capacitors Based on the HfO₂/ZrO₂ Superlattice Structure. Advanced Electronic Materials. 9(1). 26 indexed citations

12.

Wang, Chengxu, Ge‐Qi Mao, Weiming Cheng, et al.. (2022). HfO_x/AlO_y Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022). Advanced Science. 9(21). 3 indexed citations

13.

Mao, Ge‐Qi, Kan‐Hao Xue, Tao Wang, et al.. (2021). Homo-layer hafnia-based memristor with large analog switching window. Applied Physics Letters. 118(4). 13 indexed citations

14.

Zhang, Ying, Ge‐Qi Mao, Xiaolong Zhao, et al.. (2021). Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging. Nature Communications. 12(1). 7232–7232. 181 indexed citations

15.

Yuan, Jun‐Hui, Ge‐Qi Mao, Kan‐Hao Xue, Jiafu Wang, & Xiangshui Miao. (2020). A new family of two-dimensional ferroelastic semiconductors with negative Poisson's ratios. Nanoscale. 12(26). 14150–14159. 28 indexed citations

16.

Mao, Ge‐Qi, Kan‐Hao Xue, Wei Wu, et al.. (2019). Oxygen migration around the filament region in HfOx memristors. AIP Advances. 9(10). 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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