G.A. Swartz

447 total citations
34 papers, 311 citations indexed

About

G.A. Swartz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Aerospace Engineering. According to data from OpenAlex, G.A. Swartz has authored 34 papers receiving a total of 311 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 5 papers in Aerospace Engineering. Recurrent topics in G.A. Swartz's work include Plasma Diagnostics and Applications (7 papers), Silicon and Solar Cell Technologies (6 papers) and Semiconductor materials and devices (6 papers). G.A. Swartz is often cited by papers focused on Plasma Diagnostics and Applications (7 papers), Silicon and Solar Cell Technologies (6 papers) and Semiconductor materials and devices (6 papers). G.A. Swartz collaborates with scholars based in United States. G.A. Swartz's co-authors include B.B. Robinson, Chunming Wen, Anthony H. Gonzalez, G.L. Schnable, A. Rosen, Arthur Dreeben, Ramon U. Martinelli, Sidney Ulreich, Alessandra L. González and P. H. Robinson and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

G.A. Swartz

32 papers receiving 270 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
G.A. Swartz United States	10	243	111	86	19	19	34	311
Esther C. Cassidy United States	9	180 0.7×	90 0.8×	56 0.7×	16 0.8×	13 0.7×	17	252
N. H. Williams United States	5	110 0.5×	149 1.3×	50 0.6×	8 0.4×	6 0.3×	10	221
D. P. Oosthoek Netherlands	8	238 1.0×	109 1.0×	57 0.7×	4 0.2×	35 1.8×	10	318
A. Jakšić Serbia	18	818 3.4×	59 0.5×	69 0.8×	6 0.3×	39 2.1×	61	951
W. W. Byszewski United States	9	421 1.7×	86 0.8×	73 0.8×	23 1.2×	11 0.6×	15	476
J. Cooper United States	8	85 0.3×	72 0.6×	46 0.5×	21 1.1×	30 1.6×	10	219
K. Kandiah United Kingdom	11	247 1.0×	67 0.6×	30 0.3×	2 0.1×	65 3.4×	29	342
M.D. Sirkis United States	14	300 1.2×	228 2.1×	77 0.9×	16 0.8×	3 0.2×	34	383
Yu. I. Bychkov Russia	10	348 1.4×	76 0.7×	46 0.5×	18 0.9×	9 0.5×	70	380
Hubert Vollmer United States	9	154 0.6×	130 1.2×	34 0.4×	19 1.0×	8 0.4×	24	206

Countries citing papers authored by G.A. Swartz

Since Specialization

Citations

This map shows the geographic impact of G.A. Swartz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.A. Swartz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.A. Swartz more than expected).

Fields of papers citing papers by G.A. Swartz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G.A. Swartz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.A. Swartz. The network helps show where G.A. Swartz may publish in the future.

Co-authorship network of co-authors of G.A. Swartz

This figure shows the co-authorship network connecting the top 25 collaborators of G.A. Swartz. A scholar is included among the top collaborators of G.A. Swartz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G.A. Swartz. G.A. Swartz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Schnable, G.L., et al.. (1993). Impact of anomalous short-channel MOS transistors on VLSI circuit reliability. Microelectronics Reliability. 33(4). 565–582. 2 indexed citations

Schnable, G.L. & G.A. Swartz. (1988). In-process voltage stressing to increase reliability of MOS integrated circuits. Microelectronics Reliability. 28(5). 757–781. 4 indexed citations

Swartz, G.A.. (1986). Gate oxide integrity of NMOS transistor arrays. IEEE Transactions on Electron Devices. 33(11). 1826–1829. 20 indexed citations

Swartz, G.A.. (1986). Gate oxide integrity of MOS/SOS devices. IEEE Transactions on Electron Devices. 33(1). 119–125. 12 indexed citations

Swartz, G.A.. (1986). Two-step-temperature oxidation for improved oxide integrity in radiation hardened MOS devices with edge topology. 47(2). 154–161. 1 indexed citations

Swartz, G.A.. (1982). Computer model of amorphous silicon solar cell. Journal of Applied Physics. 53(1). 712–719. 58 indexed citations

Rosen, A., et al.. (1979). High-power low-loss PIN diodes for phased-array radar. 40. 22–58. 7 indexed citations

Rosen, A., et al.. (1978). Simple Method of Fabricating and Passivating High Power Pin Diodes. Journal of The Electrochemical Society. 125(4). 680–682. 2 indexed citations

Swartz, G.A., et al.. (1977). Silicon solar cells for use at high solar concentration. 226–228. 1 indexed citations

10.

Swartz, G.A., et al.. (1973). F.M.-noise measurements on p -type and n -type silicon IMPATT oscillators. Electronics Letters. 9(25). 578–580. 2 indexed citations

11.

Swartz, G.A., Alessandra L. González, & Arthur Dreeben. (1972). Electric-field profile and current control of a long epitaxial GaAs n layer. Electronics Letters. 8(4). 93–94. 2 indexed citations

12.

Robinson, B.B. & G.A. Swartz. (1969). Coherent Microwave Emission from an Electron-hole Plasma. IBM Journal of Research and Development. 13(5). 601–606. 3 indexed citations

13.

Swartz, G.A. & B.B. Robinson. (1969). Coherent Microwave Instabilities in a Thin-Layer Solid-State Plasma. Journal of Applied Physics. 40(11). 4598–4611. 7 indexed citations

14.

Swartz, G.A.. (1969). Coherent Emission from Indium Antimonide with Closely Spaced Coplanar Contacts. Journal of Applied Physics. 40(13). 5343–5349. 2 indexed citations

15.

Robinson, B.B. & G.A. Swartz. (1967). Two-Stream Instability in Semiconductor Plasmas. Journal of Applied Physics. 38(6). 2461–2465. 15 indexed citations

16.

Swartz, G.A., et al.. (1965). Sustained Plasma Oscillations near the Crest of a Moving Striation. The Physics of Fluids. 8(8). 1517–1520. 1 indexed citations

17.

Swartz, G.A., et al.. (1965). Highly Ionized Dense Plasma in a Cesium Penning Arc. The Physics of Fluids. 8(8). 1550–1558. 8 indexed citations

18.

Swartz, G.A., et al.. (1962). PLASMA ACCELERATION BY A QUASISTATIC RF ELECTRIC FIELD GRADIENT. OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information). 1 indexed citations

19.

Swartz, G.A., et al.. (1962). Frequency Dependence of Plasma Acceleration by Radio-Frequency Field Gradient. The Physics of Fluids. 5(7). 803–806. 1 indexed citations

20.

Swartz, G.A.. (1960). Low-temperature hall coefficient and conductivity in heavily doped silicon. Journal of Physics and Chemistry of Solids. 12(3-4). 245–259. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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