Feng Zhao

1.4k total citations
108 papers, 1.0k citations indexed

About

Feng Zhao is a scholar working on Electrical and Electronic Engineering, Cellular and Molecular Neuroscience and Biomedical Engineering. According to data from OpenAlex, Feng Zhao has authored 108 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 95 papers in Electrical and Electronic Engineering, 29 papers in Cellular and Molecular Neuroscience and 16 papers in Biomedical Engineering. Recurrent topics in Feng Zhao's work include Silicon Carbide Semiconductor Technologies (35 papers), Advanced Memory and Neural Computing (31 papers) and Neuroscience and Neural Engineering (25 papers). Feng Zhao is often cited by papers focused on Silicon Carbide Semiconductor Technologies (35 papers), Advanced Memory and Neural Computing (31 papers) and Neuroscience and Neural Engineering (25 papers). Feng Zhao collaborates with scholars based in United States, Taiwan and Malaysia. Feng Zhao's co-authors include Kuan Yew Cheong, Chih‐Fang Huang, Mohammad Monirul Islam, Wei Du, Jafri Malin Abdullah, Yew Hoong Wong, Kung‐Yen Lee, Xiangqun Zeng, Peiyu Chen and Sreenivasan Sasidharan and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Analytical Chemistry.

In The Last Decade

Feng Zhao

102 papers receiving 989 citations

Peers

Feng Zhao
M. K. Bera India
Mutsunori Uenuma Japan
Rajat Mahapatra India
Chun-Yuan Huang Taiwan
Ji‐Hwan Kwon South Korea
Yoon‐Ha Jeong South Korea
Kow‐Ming Chang Taiwan
Silu Peng China
Yanfei Zhao China
Yao‐Jen Lee Taiwan
M. K. Bera India
Feng Zhao
Citations per year, relative to Feng Zhao Feng Zhao (= 1×) peers M. K. Bera

Countries citing papers authored by Feng Zhao

Since Specialization
Citations

This map shows the geographic impact of Feng Zhao's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Feng Zhao with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Feng Zhao more than expected).

Fields of papers citing papers by Feng Zhao

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Feng Zhao. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Feng Zhao. The network helps show where Feng Zhao may publish in the future.

Co-authorship network of co-authors of Feng Zhao

This figure shows the co-authorship network connecting the top 25 collaborators of Feng Zhao. A scholar is included among the top collaborators of Feng Zhao based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Feng Zhao. Feng Zhao is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Faruque, Md. Omar, et al.. (2024). 256‐level honey memristor‐based in‐memory neuromorphic system. Electronics Letters. 60(17). 1 indexed citations
3.
Faruque, Md. Omar, et al.. (2024). Variation-Aware Non-linear Mapping for Honey-Memristor Based Neuromorphic System. 32–38. 1 indexed citations
4.
Zhao, Feng, et al.. (2024). Role of sulphur in resistive switching behavior of natural rubber-based memory. Nanotechnology. 36(3). 35201–35201. 2 indexed citations
5.
Zhao, Feng, et al.. (2023). Nitrogen-Doped 4H Silicon Carbide Single-Crystal Electrode for Selective Electrochemical Sensing of Dopamine. Analytical Chemistry. 95(11). 4855–4862. 22 indexed citations
6.
Wang, Binghao, et al.. (2023). Cu2O Heterojunction Solar Cell with Photovoltaic Properties Enhanced by a Ti Buffer Layer. Sustainability. 15(14). 10876–10876. 4 indexed citations
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Awais, Muhammad, Feng Zhao, & Kuan Yew Cheong. (2023). Bio-Organic Based Resistive Switching Random-Access Memory. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 352. 85–93. 4 indexed citations
10.
Zhao, Feng, et al.. (2023). Graphene-Based Chemiresistor Sensors for Drinking Water Quality Monitoring. Sensors. 23(24). 9828–9828. 8 indexed citations
11.
Mamun, Abdulla Al, et al.. (2023). Silicon Carbide-Based DNA Sensing Technologies. Micromachines. 14(8). 1557–1557. 1 indexed citations
12.
Xiao, Zhigang, et al.. (2022). Study of carbon nanotube embedded honey as a resistive switching material. Nanotechnology. 33(49). 495705–495705. 9 indexed citations
13.
Cheong, Kuan Yew, et al.. (2022). Effects of drying temperature on preparation of pectin polysaccharide thin film for resistive switching memory. Journal of Materials Science Materials in Electronics. 33(25). 19805–19826. 12 indexed citations
14.
Du, Wei, et al.. (2021). Numerical Study of Graphene/Au/SiC Waveguide-Based Surface Plasmon Resonance Sensor. Biosensors. 11(11). 455–455. 11 indexed citations
15.
Cheong, Kuan Yew, et al.. (2021). Review on resistive switching mechanisms of bio-organic thin film for non-volatile memory application. Nanotechnology Reviews. 10(1). 680–709. 65 indexed citations
16.
Cheng, Wei‐Chih, Liang Wang, Fanming Zeng, et al.. (2020). Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors. Semiconductor Science and Technology. 35(4). 45010–45010. 10 indexed citations
17.
Zhao, Feng, et al.. (2020). Resistive switching behaviour in a polymannose film for multistate non-volatile memory application. Journal of Materials Chemistry C. 9(4). 1437–1450. 24 indexed citations
18.
Cheng, Wei‐Chih, et al.. (2019). Low leakage GaN HEMTs with sub-100 nm T-shape gates fabricated by a low-damage etching process. Journal of Materials Science Materials in Electronics. 31(8). 5886–5891. 4 indexed citations
19.
Huang, Chih‐Fang, et al.. (2019). Simulation Study of 4H-SiC Trench MOSFETs with Various Gate Structures. 8 indexed citations
20.
Huang, Chih‐Fang, et al.. (2018). A Novel Deep Junction Edge Termination for Superjunction MOSFETs. IEEE Electron Device Letters. 39(4). 544–547. 7 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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