Feng Qi

411 total citations
27 papers, 337 citations indexed

About

Feng Qi is a scholar working on Electrical and Electronic Engineering, Control and Systems Engineering and Condensed Matter Physics. According to data from OpenAlex, Feng Qi has authored 27 papers receiving a total of 337 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 5 papers in Control and Systems Engineering and 2 papers in Condensed Matter Physics. Recurrent topics in Feng Qi's work include Silicon Carbide Semiconductor Technologies (18 papers), Advanced DC-DC Converters (14 papers) and Multilevel Inverters and Converters (9 papers). Feng Qi is often cited by papers focused on Silicon Carbide Semiconductor Technologies (18 papers), Advanced DC-DC Converters (14 papers) and Multilevel Inverters and Converters (9 papers). Feng Qi collaborates with scholars based in United States, China and Australia. Feng Qi's co-authors include Longya Xu, John Y. Hung, R.M. Nelms, Miao Wang, Lizhi Sun, Yifeng Wu, Jing Shang, Zhan Wang, Liming Liu and Boxue Hu and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Industrial Electronics and IEEE Transactions on Power Electronics.

In The Last Decade

Feng Qi

25 papers receiving 322 citations

Peers

Feng Qi
Comparison fields: 5 of 23
  • Electrical and Electronic Engineering 314
  • Control and Systems Engineering 92
  • Mechanical Engineering 37
  • Condensed Matter Physics 33
  • Electronic, Optical and Magnetic Materials 21
Piotr Dworakowski France
Bernardo Cougo France
Soumik Sen United States
Fausto Stella Italy
Yeh-Hsiang Ho Hong Kong
Ruizhu Wu United Kingdom
Ankan De United States
David Grider United States
Eric Persson United States
Julu Sun United States
Piotr Dworakowski France View profile →
Citations per field, relative to Feng Qi
Feng Qi · 1×
Citations per year, relative to Feng Qi
Feng Qi · 1×

Countries citing papers authored by Feng Qi

Since Specialization
Citations

This map shows the geographic impact of Feng Qi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Feng Qi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Feng Qi more than expected).

Fields of papers citing papers by Feng Qi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Feng Qi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Feng Qi. The network helps show where Feng Qi may publish in the future.

Co-authorship network of co-authors of Feng Qi

This figure shows the co-authorship network connecting the top 25 collaborators of Feng Qi. A scholar is included among the top collaborators of Feng Qi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Feng Qi. Feng Qi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
# Title Journal Authors Indexed citations
1 Natural Vermiculite Slice Modified by CTAB and Zirconium for Selective Adsorption of Phosphate Water Air & Soil Pollution Feng Qi, Hang Yang et al. 0
2 Static and Dynamic Radiation Damage of Silicon Carbide VDMOS and Their Comparison SHILAP Revista de lepidopterología Feng Qi 1
3 An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model Sourabh Khandelwal, Feng Qi et al. 6
4 Design of Torque Standard Device for Extreme Environment Journal of Physics Conference Series Feng Qi, Xiufang Liu et al. 0
5 GaN FETs Enable High Frequency Dual Active Bridge Converters for Bi-directional Battery Chargers Feng Qi, Zhan Wang et al. 3
6 900V GaN FETs in a 300kHz 2kW LLC Converter for High Input Voltage Applications Feng Qi, Zhan Wang et al. 1
7 650V GaN Based 3.3kW Bi-Directional DC-DC Converter for High Efficiency Battery Charger with Wide Battery Voltage Range Feng Qi, Zhan Wang et al. 11
8 Advantage of GaN in Phase Shift Full Bridges Feng Qi, Zhan Wang et al. 1
9 Investigation and Review of Challenges in a High-Temperature 30-kVA Three-Phase Inverter Using SiC MOSFETs IEEE Transactions on Industry Applications Feng Qi, Miao Wang et al. 37
10 Efficiency and electromagnetic interference analysis of wireless power transfer for high voltage gate driver application Jianyu Pan, Feng Qi et al. 16
11 Design and evaluation of 30kVA inverter using SiC MOSFET for 180°C ambient temperature operation Feng Qi, Miao Wang et al. 8
12 Development of a High-Temperature Gate Drive and Protection Circuit Using Discrete Components IEEE Transactions on Power Electronics Feng Qi, Longya Xu 15
13 A high temperature de-saturation protection and under voltage lock out circuit for SiC MOSFET Feng Qi, Longya Xu et al. 7
14 Si and SiC power MOSFET characterization and comparison Feng Qi, Lixing Fu et al. 13
15 Transformer isolated gate drive with protection for SiC MOSFET in high temperature application Feng Qi, Longya Xu et al. 9
16 Common mode EMI noise characterization and improvement for GaN switched-capacitor converter Feng Qi, Longya Xu et al. 19
17 Posicast-based digital control of the buck converter IEEE Transactions on Industrial Electronics Feng Qi, R.M. Nelms et al. 46
18 Drive of Single-Phase Brushless DC Motors Based on Torque Analysis IEEE Transactions on Magnetics Lizhi Sun, Feng Qi et al. 22
19 Study on the Rotor Levitation of one High Speed Switched Reluctance Motor Proceedings of the Annual Conference of the IEEE Industrial Electronics Society Lizhi Sun, Gang Yang et al. 14
20 The application of posicast control to DC-DC converters Feng Qi, John Y. Hung et al. 16

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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