Fangzhou Du

608 total citations
42 papers, 428 citations indexed

About

Fangzhou Du is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Fangzhou Du has authored 42 papers receiving a total of 428 indexed citations (citations by other indexed papers that have themselves been cited), including 31 papers in Electrical and Electronic Engineering, 27 papers in Condensed Matter Physics and 18 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Fangzhou Du's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (14 papers). Fangzhou Du is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor materials and devices (15 papers) and Ga2O3 and related materials (14 papers). Fangzhou Du collaborates with scholars based in China, Hong Kong and Singapore. Fangzhou Du's co-authors include Hong Liu, Beizhen Xie, Liu Hong, Boyang Jia, Wenbo Dong, Kun Dong, Zhenglong Li, Suling Yang, Qing Wang and Yang Jiang and has published in prestigious journals such as Environmental Science & Technology, Applied Physics Letters and Bioresource Technology.

In The Last Decade

Fangzhou Du

36 papers receiving 409 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Fangzhou Du China 11 267 168 147 104 56 42 428
Yicheng Wu China 10 152 0.6× 99 0.6× 198 1.3× 37 0.4× 21 0.4× 20 387
D. G. Pacheco‐Salazar Brazil 11 176 0.7× 50 0.3× 59 0.4× 38 0.4× 61 1.1× 32 324
Jaekyung Jang South Korea 7 789 3.0× 915 5.4× 456 3.1× 23 0.2× 135 2.4× 20 1.1k
Weipeng Wang China 11 109 0.4× 39 0.2× 98 0.7× 17 0.2× 28 0.5× 27 413
Emily Gardel United States 5 133 0.5× 244 1.5× 68 0.5× 6 0.1× 105 1.9× 6 380
Yooun Heo Australia 14 495 1.9× 55 0.3× 230 1.6× 20 0.2× 126 2.3× 25 865
Yao‐Wen Guo China 15 185 0.7× 34 0.2× 169 1.1× 46 0.4× 46 0.8× 26 439
Jongsun Maeng South Korea 14 370 1.4× 29 0.2× 99 0.7× 22 0.2× 214 3.8× 19 578
Yihao Li China 9 75 0.3× 196 1.2× 30 0.2× 6 0.1× 63 1.1× 20 382

Countries citing papers authored by Fangzhou Du

Since Specialization
Citations

This map shows the geographic impact of Fangzhou Du's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Fangzhou Du with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Fangzhou Du more than expected).

Fields of papers citing papers by Fangzhou Du

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Fangzhou Du. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Fangzhou Du. The network helps show where Fangzhou Du may publish in the future.

Co-authorship network of co-authors of Fangzhou Du

This figure shows the co-authorship network connecting the top 25 collaborators of Fangzhou Du. A scholar is included among the top collaborators of Fangzhou Du based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Fangzhou Du. Fangzhou Du is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Du, Fangzhou, Yang Jiang, Jiaqi He, et al.. (2025). Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment. Applied Physics Letters. 126(1). 1 indexed citations
2.
Du, Fangzhou, et al.. (2025). Low-Resistivity Ohmic Contact on p-GaN/AlGaN/GaN Enabled by Mg-Doped Spin-on-Glass Treatment. IEEE Electron Device Letters. 46(7). 1055–1058.
3.
Sun, Yuhan, Fangzhou Du, Jiaqi He, et al.. (2025). A Novel AlGaN/GaN SBD Thermal Sensor With Ultralow Power, Excellent Linearity, and High Sensitivity. IEEE Sensors Journal. 25(5). 8024–8031. 2 indexed citations
4.
Wang, Xiaohui, M.F. Li, Yang Jiang, et al.. (2025). Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics. Nanomaterials. 15(2). 87–87. 4 indexed citations
5.
Wang, Xiaohui, et al.. (2025). 2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure. Journal of Alloys and Compounds. 1036. 181672–181672.
6.
Du, Fangzhou, Yang Jiang, Jiaqi He, et al.. (2024). A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs. Journal of Alloys and Compounds. 978. 173499–173499. 4 indexed citations
7.
Jiang, Yang, Fangzhou Du, Jiaqi He, et al.. (2024). Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. Applied Physics Letters. 124(24). 6 indexed citations
8.
He, Jiaqi, et al.. (2024). Low Contact Resistivity of <10 Ω·mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN. IEEE Electron Device Letters. 46(1). 24–27. 1 indexed citations
9.
10.
Du, Fangzhou, Yang Jiang, M.F. Li, et al.. (2024). Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique. Nanomaterials. 14(18). 1471–1471. 1 indexed citations
11.
He, Jiaqi, Fangzhou Du, Yang Jiang, et al.. (2024). Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench. Applied Physics Letters. 124(13). 2 indexed citations
12.
13.
Wang, Xiaohui, Yang Jiang, Fangzhou Du, et al.. (2024). High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique. Applied Physics Letters. 125(13). 2 indexed citations
14.
Cheng, Wei‐Chih, et al.. (2024). Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique. Nanomaterials. 14(22). 1817–1817. 1 indexed citations
15.
Jiang, Yang, Jiaqi He, Fangzhou Du, et al.. (2023). Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity. Applied Physics Letters. 123(9). 4 indexed citations
16.
He, Jiaqi, Fangzhou Du, Yang Jiang, et al.. (2023). Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance. Applied Physics Letters. 123(10). 10 indexed citations
17.
18.
Cheng, Wei‐Chih, Jiaqi He, Yang Jiang, et al.. (2022). Low trap density of oxygen-rich HfO2/GaN interface for GaN MIS-HEMT applications. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 40(2). 7 indexed citations
19.
Du, Fangzhou, Yang Jiang, Jiaqi He, et al.. (2022). Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer. Materials Science in Semiconductor Processing. 143. 106544–106544. 8 indexed citations
20.
Du, Fangzhou, Jürg Keller, Zhiguo Yuan, et al.. (2016). Nitrite addition to acidified sludge significantly improves digestibility, toxic metal removal, dewaterability and pathogen reduction. Scientific Reports. 6(1). 39795–39795. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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