F. Raoult

458 total citations
44 papers, 350 citations indexed

About

F. Raoult is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, F. Raoult has authored 44 papers receiving a total of 350 indexed citations (citations by other indexed papers that have themselves been cited), including 43 papers in Electrical and Electronic Engineering, 18 papers in Materials Chemistry and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in F. Raoult's work include Thin-Film Transistor Technologies (29 papers), Semiconductor materials and devices (18 papers) and Silicon and Solar Cell Technologies (15 papers). F. Raoult is often cited by papers focused on Thin-Film Transistor Technologies (29 papers), Semiconductor materials and devices (18 papers) and Silicon and Solar Cell Technologies (15 papers). F. Raoult collaborates with scholars based in France, Algeria and Germany. F. Raoult's co-authors include O. Bonnaud, A. Migus, D. Husson, C. Sauteret, Laurent Pichon, Yves Colin, A. Modena, F. Dorchies, V. Malka and Gérard Rossé and has published in prestigious journals such as Optics Letters, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

F. Raoult

42 papers receiving 343 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Raoult France 12 279 140 130 29 25 44 350
I. S. Ruddock United Kingdom 9 199 0.7× 192 1.4× 57 0.4× 31 1.1× 20 0.8× 45 303
V. P. Mitrokhin Russia 11 204 0.7× 198 1.4× 59 0.5× 47 1.6× 27 1.1× 27 318
L. R. Brovelli Switzerland 11 464 1.7× 443 3.2× 49 0.4× 20 0.7× 13 0.5× 22 523
Gregory J. Steckman United States 10 222 0.8× 296 2.1× 45 0.3× 25 0.9× 14 0.6× 15 372
Bertúlio de Lima Bernardo Brazil 12 243 0.9× 203 1.4× 108 0.8× 40 1.4× 6 0.2× 40 491
Florestan Ziem Germany 4 54 0.2× 203 1.4× 322 2.5× 34 1.2× 33 1.3× 4 371
A. R. Tynes United States 9 456 1.6× 243 1.7× 41 0.3× 32 1.1× 23 0.9× 21 546
M. Goulkov Ukraine 12 230 0.8× 334 2.4× 85 0.7× 38 1.3× 4 0.2× 29 399
Matthias Duwe Germany 7 85 0.3× 129 0.9× 58 0.4× 105 3.6× 42 1.7× 10 250
C. Poellmann Germany 3 277 1.0× 295 2.1× 242 1.9× 39 1.3× 3 0.1× 5 499

Countries citing papers authored by F. Raoult

Since Specialization
Citations

This map shows the geographic impact of F. Raoult's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Raoult with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Raoult more than expected).

Fields of papers citing papers by F. Raoult

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Raoult. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Raoult. The network helps show where F. Raoult may publish in the future.

Co-authorship network of co-authors of F. Raoult

This figure shows the co-authorship network connecting the top 25 collaborators of F. Raoult. A scholar is included among the top collaborators of F. Raoult based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Raoult. F. Raoult is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Amrani, M., et al.. (2005). Two-dimensional simulation of the effects of grain boundaries on theC–Vcharacteristics of P+N polysilicon diodes. Journal of Physics D Applied Physics. 38(4). 596–603. 4 indexed citations
2.
Ribeyre, X., C. Rouyer, F. Raoult, et al.. (2001). All-optical programmable shaping of narrow-band nanosecond pulses with picosecond accuracy by use of adapted chirps and quadratic nonlinearities. Optics Letters. 26(15). 1173–1173. 13 indexed citations
3.
Tala‐Ighil, B., et al.. (2001). Correlation between the Ageing and the Grain Size of Polysilicon Thin-Film Transistors. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 80-81. 343–348. 1 indexed citations
4.
Tala‐Ighil, B., et al.. (1999). Ageing of laser crystallized and unhydrogenated polysilicon thin film transistors. Microelectronics Reliability. 39(6-7). 851–855. 1 indexed citations
5.
Benamara, Z., et al.. (1999). C(V) characterization of metal/polysilicon/oxide/monosilicon structure. Microelectronics Journal. 30(7). 679–683.
6.
Raoult, F., D. Husson, C. Sauteret, et al.. (1998). Efficient generation of narrow-bandwidth picosecond pulses by frequency doubling of femtosecond chirped pulses. Optics Letters. 23(14). 1117–1117. 73 indexed citations
7.
Pichon, Laurent, et al.. (1997). Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays. Thin Solid Films. 296(1-2). 133–136. 14 indexed citations
8.
Raoult, F., et al.. (1997). Hot-Wire Hydrogen Passivation of Polycrystalline Silicon TFT's. MRS Proceedings. 471. 2 indexed citations
9.
10.
11.
Pichon, Laurent, et al.. (1996). Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors. Solid-State Electronics. 39(7). 1065–1069. 5 indexed citations
12.
Pichon, Laurent, et al.. (1995). High Performances of Low Temperature (≤ 600°C) Unhydrogenated Polysilicon Thin Film Transistors. MRS Proceedings. 403. 2 indexed citations
13.
Raoult, F., et al.. (1995). The analysis of the leakage current of polycrystalline silicon thin-film transistors as a function of active layer thickness. Materials Chemistry and Physics. 42(2). 101–105. 2 indexed citations
14.
Benamara, Z., et al.. (1994). Influence of the Polysilicon Film Structure on the Capacitance Voltage Characteristics of Thin Film Transistors. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 37-38. 589–594. 2 indexed citations
15.
Bonnaud, O., et al.. (1994). In-situ phosphorous-doped VLPCVD polysilicon layers for polysilicon thin-film transistors. IEE Proceedings - Circuits Devices and Systems. 141(1). 19–19. 1 indexed citations
16.
Raoult, F., et al.. (1994). Desorption Energy of Oxygen Adsorbed on Un-Intentionally Doped Low Pressure Chemical Vapor Deposited Silicon Films. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 37-38. 151–156. 1 indexed citations
17.
Aziz, Alex, O. Bonnaud, Hervé Lhermite, & F. Raoult. (1994). Lateral polysilicon pn diodes: current-voltage characteristics simulation between 200 K and 400 K using a numerical approach. IEEE Transactions on Electron Devices. 41(2). 204–211. 13 indexed citations
18.
Raoult, F., et al.. (1992). Influence of thermal treatments on the sensitivity of CdSe thin films to oxygen ionosorption. Journal of Physics and Chemistry of Solids. 53(5). 723–732. 4 indexed citations
19.
Aziz, Alex, F. Raoult, & O. Bonnaud. (1992). Electrical conduction phenomena versus temperature in a lateral polysilicon pn junction: analysis and modelling. Materials Chemistry and Physics. 32(4). 368–373. 3 indexed citations
20.
Raoult, F., et al.. (1989). Standardization and stabilization of the resistivity-temperature characteristics of CdSe thin films by vacuum annealing. Thin Solid Films. 182(1-2). 1–14. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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