F. Berz

881 total citations
37 papers, 680 citations indexed

About

F. Berz is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, F. Berz has authored 37 papers receiving a total of 680 indexed citations (citations by other indexed papers that have themselves been cited), including 34 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 4 papers in Surfaces, Coatings and Films. Recurrent topics in F. Berz's work include Advancements in Semiconductor Devices and Circuit Design (16 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and devices (10 papers). F. Berz is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (16 papers), Silicon and Solar Cell Technologies (15 papers) and Semiconductor materials and devices (10 papers). F. Berz collaborates with scholars based in Finland, United Kingdom and Austria. F. Berz's co-authors include H. K. Kuiken, I. Flinn, R. W. Cooper, J. M. AITCHISON, G. Duggan, N.W. Robinson, A.B. Crowley and J. Pritchard and has published in prestigious journals such as Journal of Applied Physics, Surface Science and IEEE Transactions on Electron Devices.

In The Last Decade

F. Berz

36 papers receiving 598 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Berz Finland 15 587 301 78 73 43 37 680
L. Forbes United States 17 1.1k 1.8× 432 1.4× 55 0.7× 136 1.9× 90 2.1× 98 1.1k
Itsuo Umebu Japan 14 525 0.9× 520 1.7× 27 0.3× 129 1.8× 44 1.0× 46 664
Kenzo Fujiwara Japan 16 379 0.6× 459 1.5× 49 0.6× 132 1.8× 23 0.5× 53 585
V. Diadiuk United States 14 551 0.9× 460 1.5× 78 1.0× 89 1.2× 136 3.2× 37 715
Avid Kamgar United States 15 517 0.9× 460 1.5× 49 0.6× 168 2.3× 35 0.8× 43 751
G. Eisenstein United States 19 984 1.7× 580 1.9× 59 0.8× 86 1.2× 39 0.9× 60 1.1k
G. S. Picus United States 15 426 0.7× 546 1.8× 35 0.4× 187 2.6× 84 2.0× 25 743
C.A. Burrus United States 21 1.4k 2.4× 704 2.3× 26 0.3× 37 0.5× 78 1.8× 82 1.5k
Mitsutoshi Takahashi Japan 12 522 0.9× 299 1.0× 30 0.4× 147 2.0× 60 1.4× 21 632
Parvez N. Uppal United States 10 381 0.6× 305 1.0× 28 0.4× 87 1.2× 54 1.3× 40 472

Countries citing papers authored by F. Berz

Since Specialization
Citations

This map shows the geographic impact of F. Berz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Berz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Berz more than expected).

Fields of papers citing papers by F. Berz

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Berz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Berz. The network helps show where F. Berz may publish in the future.

Co-authorship network of co-authors of F. Berz

This figure shows the co-authorship network connecting the top 25 collaborators of F. Berz. A scholar is included among the top collaborators of F. Berz based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Berz. F. Berz is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Berz, F.. (1993). Transmission coefficient and Stark shifts in double-barrier quantum well structures. Semiconductor Science and Technology. 8(2). 243–253. 3 indexed citations
2.
Berz, F.. (1986). Transport of electrons in monolithic hot electron Si transistors. Solid-State Electronics. 29(12). 1213–1222. 1 indexed citations
3.
Berz, F.. (1985). The Bethe condition for thermionic emission near an absorbing boundary. Solid-State Electronics. 28(10). 1007–1013. 33 indexed citations
4.
Berz, F., et al.. (1982). Effect of linear emitter recombination on OCVD determination of lifetime in p-i-n diodes. Solid-State Electronics. 25(8). 693–697. 4 indexed citations
5.
Berz, F.. (1979). Recombination in Semiconductors. Electronics and Power. 25(11). 810–810. 7 indexed citations
6.
Berz, F., et al.. (1979). Recombination in the end regions of pin diodes. Solid-State Electronics. 22(3). 293–301. 38 indexed citations
7.
Berz, F.. (1977). A simplified theory of the p-i-n diode. Solid-State Electronics. 20(8). 709–714. 21 indexed citations
8.
Berz, F.. (1975). Comments on "Measurements and interpretation of low frequency noise in FET's. IEEE Transactions on Electron Devices. 22(5). 293–294. 3 indexed citations
9.
Berz, F., et al.. (1975). The effect of emitter doping gradient on fTin microwave bipolar transistors. IEEE Transactions on Electron Devices. 22(1). 15–20. 17 indexed citations
10.
Berz, F., et al.. (1971). Test of McWhorter's model of low-frequency noise in Si MOSTs. Microelectronics Reliability. 10(6). 429–433. 3 indexed citations
11.
Berz, F.. (1970). Theory of low frequency noise in Si MOST's. Solid-State Electronics. 13(5). 631–647. 60 indexed citations
12.
Berz, F.. (1970). Ionised impurity scattering in silicon surface channels. Solid-State Electronics. 13(6). 903–906. 19 indexed citations
13.
Flinn, I., et al.. (1967). Low frequency noise in MOS field effect transistors. Solid-State Electronics. 10(8). 833–845. 26 indexed citations
14.
Berz, F.. (1965). On a quarter wave light condenser. British Journal of Applied Physics. 16(11). 1733–1738. 13 indexed citations
15.
Berz, F.. (1964). Theory of the reflection of light from semiconducting surface layers at the plasma frequency. Surface Science. 2. 75–85. 4 indexed citations
16.
Berz, F.. (1964). On the derivatives of surface excesses. Journal of Physics and Chemistry of Solids. 25(8). 859–864. 2 indexed citations
17.
Robinson, N.W. & F. Berz. (1959). Initial pumping and recovery of ionization gauges. Vacuum. 9(1). 48–53. 7 indexed citations
18.
Berz, F.. (1959). Field Effect at High Frequency†. Journal of Electronics and Control. 6(2). 97–112. 13 indexed citations
19.
Berz, F.. (1958). On the Theory of Surface Recombination in Semiconductors for Large Potential Differences between Surface and Bulk. Proceedings of the Physical Society. 71(2). 275–280. 1 indexed citations
20.
Berz, F.. (1951). Reflection and refraction of microwaves at a set of parallel metallic plates. Journal of the IEE. 1951(3). 93–95. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by L. Forbes Breakdown of academic impact, for papers by Itsuo Umebu Breakdown of academic impact, for papers by Kenzo Fujiwara Breakdown of academic impact, for papers by V. Diadiuk Breakdown of academic impact, for papers by Avid Kamgar Breakdown of academic impact, for papers by G. Eisenstein Breakdown of academic impact, for papers by G. S. Picus Breakdown of academic impact, for papers by C.A. Burrus Breakdown of academic impact, for papers by Mitsutoshi Takahashi Breakdown of academic impact, for papers by Parvez N. Uppal
Rankless by CCL
2026