E.A. Menêses

699 total citations
58 papers, 572 citations indexed

About

E.A. Menêses is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, E.A. Menêses has authored 58 papers receiving a total of 572 indexed citations (citations by other indexed papers that have themselves been cited), including 40 papers in Atomic and Molecular Physics, and Optics, 31 papers in Electrical and Electronic Engineering and 18 papers in Materials Chemistry. Recurrent topics in E.A. Menêses's work include Semiconductor Quantum Structures and Devices (33 papers), Quantum and electron transport phenomena (13 papers) and Quantum Dots Synthesis And Properties (11 papers). E.A. Menêses is often cited by papers focused on Semiconductor Quantum Structures and Devices (33 papers), Quantum and electron transport phenomena (13 papers) and Quantum Dots Synthesis And Properties (11 papers). E.A. Menêses collaborates with scholars based in Brazil, Germany and France. E.A. Menêses's co-authors include J. R. Leite, F. Cerdeira, R. C. C. Leite, Roberto Luzzi, Édson Laureto, A. Gouskov, E. C. F. da Silva, L. M. R. Scolfaro, Sidney A. Lourenço and I. F. L. Dias and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

E.A. Menêses

58 papers receiving 546 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
E.A. Menêses Brazil 12 367 308 263 101 83 58 572
P. Fṙanzosi Italy 13 488 1.3× 478 1.6× 221 0.8× 49 0.5× 56 0.7× 92 701
T. D. Golding United States 14 387 1.1× 402 1.3× 191 0.7× 75 0.7× 50 0.6× 71 557
S. Blunier Switzerland 15 358 1.0× 608 2.0× 448 1.7× 55 0.5× 39 0.5× 58 763
K. R. Evans United States 13 369 1.0× 337 1.1× 175 0.7× 174 1.7× 93 1.1× 43 574
B. Schlicht Germany 8 393 1.1× 351 1.1× 255 1.0× 76 0.8× 64 0.8× 11 574
J. Söllner Germany 12 296 0.8× 252 0.8× 216 0.8× 106 1.0× 35 0.4× 48 527
G. Bauer Austria 18 656 1.8× 401 1.3× 441 1.7× 198 2.0× 126 1.5× 64 898
G. Landwehr Germany 17 630 1.7× 588 1.9× 466 1.8× 111 1.1× 104 1.3× 61 895
D. A. Neumann United States 10 361 1.0× 274 0.9× 182 0.7× 109 1.1× 31 0.4× 15 546
A. M. Huber France 12 554 1.5× 634 2.1× 168 0.6× 75 0.7× 60 0.7× 34 834

Countries citing papers authored by E.A. Menêses

Since Specialization
Citations

This map shows the geographic impact of E.A. Menêses's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E.A. Menêses with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E.A. Menêses more than expected).

Fields of papers citing papers by E.A. Menêses

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E.A. Menêses. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E.A. Menêses. The network helps show where E.A. Menêses may publish in the future.

Co-authorship network of co-authors of E.A. Menêses

This figure shows the co-authorship network connecting the top 25 collaborators of E.A. Menêses. A scholar is included among the top collaborators of E.A. Menêses based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E.A. Menêses. E.A. Menêses is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lang, Rossano, Alan Silva de Menezes, Adenílson O. dos Santos, et al.. (2013). Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles. Journal of Applied Crystallography. 46(6). 1796–1804. 10 indexed citations
2.
Pepe, Iuri Muniz, et al.. (2012). Structural, optical and electrical properties of indium nitride polycrystalline films. Thin Solid Films. 520(15). 4848–4852. 8 indexed citations
3.
Lang, Rainhart, et al.. (2009). Si(001)中のFe+イオン注入の研究におけるシンクロトロンX線多重回折. Journal of Physics D Applied Physics. 42(19). 1–7. 25 indexed citations
4.
Santos, Adenílson O. dos, Rossano Lang, Alan Silva de Menezes, et al.. (2009). Synchrotron x-ray multiple diffraction in the study of Fe+ion implantation in Si(0 0 1). Journal of Physics D Applied Physics. 42(19). 195401–195401. 7 indexed citations
5.
Vasconcellos, Áurea R., et al.. (2009). Optical properties in complex-structured nanometric quantum wells: Photoluminescence, photoluminescence excitation, and Stokes shift. Journal of Applied Physics. 106(8). 2 indexed citations
6.
Laureto, Édson, et al.. (2005). A técnica de fotoluminescência aplicada à investigação de imperfeições estruturais em poços quânticos de materiais semicondutores. SHILAP Revista de lepidopterología. 26(1). 23–23. 3 indexed citations
7.
Pacheco‐Salazar, D. G., Sam Fong Yau Li, F. Cerdeira, et al.. (2005). Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate. Journal of Crystal Growth. 284(3-4). 379–387. 14 indexed citations
8.
Tabata, A., Julio A. N. T. Soares, J. R. Leite, et al.. (2003). Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates. Journal of Crystal Growth. 252(1-3). 208–212. 5 indexed citations
9.
Soares, Julio A. N. T., F. Cerdeira, E.A. Menêses, et al.. (2002). Near band-edge optical properties of cubic GaN. Solid State Communications. 125(3-4). 205–208. 11 indexed citations
10.
As, D. J., K. Lischka, E.A. Menêses, et al.. (2002). Optical Characterization of Cubic AlGaN/GaN Quantum Wells. physica status solidi (a). 192(1). 129–134. 4 indexed citations
11.
Silva, E. C. F. da, et al.. (2000). Effects of thermally activated hole escape mechanism on the optical and electrical properties inp-type Si δ-dopedGaAs(311)Alayers. Physical review. B, Condensed matter. 61(20). 13923–13928. 3 indexed citations
12.
Silva, E. C. F. da, Guilherme Matos Sipahi, A. A. Quivy, et al.. (1999). Band-edge modifications due to photogenerated carriers in singlep-type δ-doped GaAs layers. Physical review. B, Condensed matter. 59(7). 4634–4637. 4 indexed citations
13.
Oliveira, José Brás Barreto de, E.A. Menêses, & E. C. F. da Silva. (1999). Magneto-optical studies of the correlation between interface microroughness parameters and the photoluminescence line shape inGaAs/Ga0.7Al0.3Asquantum wells. Physical review. B, Condensed matter. 60(3). 1519–1522. 11 indexed citations
14.
Cotta, M. A., et al.. (1998). Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution. Physical review. B, Condensed matter. 57(19). 12501–12505. 7 indexed citations
15.
Cotta, M. A., et al.. (1997). On the onset of InAs islanding on InP: influence of surface steps. Surface Science. 388(1-3). 84–91. 10 indexed citations
16.
Alves, E. S., Bernardo R. A. Neves, E.A. Menêses, J. F. Sampaio, & A. G. de Oliveira. (1994). Magnetotunneling studies of the dimensionality of the emitter electron gas of double barrier devices. Brazilian Journal of Physics. 24(1). 203–208. 2 indexed citations
17.
Scolfaro, L. M. R., et al.. (1993). Electronic States of n-Type δ-Doping in GaAs Heterostructures. Materials science forum. 143-147. 669–674. 6 indexed citations
18.
Menêses, E.A., et al.. (1983). Radiative recombination of deep centers in ZnSe: In. Physica B+C. 117-118. 160–162. 3 indexed citations
19.
Zawislak, F.C., J.D. Rogers, & E.A. Menêses. (1973). Conversion-electron-gamma and gamma-gamma directional angular correlations in 160Dy. Nuclear Physics A. 211(3). 581–588. 6 indexed citations
20.
Menêses, E.A., et al.. (1972). Band gap reduction in CdS due to high density of photo-injected carriers. Solid State Communications. 10(6). 517–520. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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