E. G. Bylander

711 total citations · 1 hit paper
14 papers, 604 citations indexed

About

E. G. Bylander is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. G. Bylander has authored 14 papers receiving a total of 604 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Electrical and Electronic Engineering, 5 papers in Materials Chemistry and 4 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. G. Bylander's work include Advanced Semiconductor Detectors and Materials (4 papers), Chalcogenide Semiconductor Thin Films (4 papers) and Semiconductor materials and devices (3 papers). E. G. Bylander is often cited by papers focused on Advanced Semiconductor Detectors and Materials (4 papers), Chalcogenide Semiconductor Thin Films (4 papers) and Semiconductor materials and devices (3 papers). E. G. Bylander collaborates with scholars based in United States and Netherlands. E. G. Bylander's co-authors include M. Hass, Charles W. Myles, R. A. Chapman, P. F. Williams, Hubert Riedl, Jack R. Dixon, R. B. Schoolar, C. A. Nieto de Castro, Chang-Feng Wan and D. F. Weirauch and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

E. G. Bylander

13 papers receiving 553 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Surface effects on the low-energy cathodoluminescence of zinc oxide

1978 421 citations E. G. Bylander Journal of Applied Physics profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. G. Bylander United States	8	504	390	233	88	35	14	604
T. Seshagiri Rao India	15	622 1.2×	297 0.8×	535 2.3×	94 1.1×	17 0.5×	40	710
I. Bunget Romania	7	268 0.5×	187 0.5×	130 0.6×	94 1.1×	43 1.2×	15	366
Goro Shimaoka Japan	12	344 0.7×	253 0.6×	101 0.4×	67 0.8×	29 0.8×	34	409
Masumi Ito Japan	5	300 0.6×	380 1.0×	143 0.6×	32 0.4×	41 1.2×	15	522
Sz. Fujita Japan	12	532 1.1×	336 0.9×	235 1.0×	64 0.7×	39 1.1×	24	588
Pran Kishan India	12	644 1.3×	332 0.9×	501 2.2×	133 1.5×	25 0.7×	41	700
Takeshi Miyauchi Japan	11	290 0.6×	329 0.8×	54 0.2×	199 2.3×	38 1.1×	34	430
Chunlin Chai China	11	381 0.8×	194 0.5×	160 0.7×	93 1.1×	29 0.8×	36	458
V. Yu. Slivka Ukraine	11	331 0.7×	160 0.4×	159 0.7×	129 1.5×	36 1.0×	53	405
M. L. Green United States	9	163 0.3×	325 0.8×	108 0.5×	87 1.0×	32 0.9×	17	388

Countries citing papers authored by E. G. Bylander

Since Specialization

Citations

This map shows the geographic impact of E. G. Bylander's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. G. Bylander with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. G. Bylander more than expected).

Fields of papers citing papers by E. G. Bylander

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. G. Bylander. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. G. Bylander. The network helps show where E. G. Bylander may publish in the future.

Co-authorship network of co-authors of E. G. Bylander

This figure shows the co-authorship network connecting the top 25 collaborators of E. G. Bylander. A scholar is included among the top collaborators of E. G. Bylander based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. G. Bylander. E. G. Bylander is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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14 of 14 papers shown

1.

Bylander, E. G., Charles W. Myles, & Yu‐Tang Shen. (1990). Defect identification in semiconductor alloys using deep level composition dependence. II. Application to GaAs1−xPx. Journal of Applied Physics. 67(12). 7351–7358. 7 indexed citations

2.

Chu, T. L., et al.. (1988). Reduced photoinduced degradation in chemical vapor deposited hydrogenated amorphous silicon films. Applied Physics Letters. 52(10). 807–809. 7 indexed citations

3.

Wan, Chang-Feng, D. F. Weirauch, R. Korenstein, E. G. Bylander, & C. A. Nieto de Castro. (1986). Supercooling studies and LPE growth of Hg1−xCdxTe from Te-Rich solutions. Journal of Electronic Materials. 15(3). 151–157. 14 indexed citations

4.

Myles, Charles W., P. F. Williams, R. A. Chapman, & E. G. Bylander. (1985). Identification of defect centers in Hg1−xCdxTe using their energy level composition dependence. Journal of Applied Physics. 57(12). 5279–5286. 28 indexed citations

5.

Bylander, E. G.. (1978). Surface effects on the low-energy cathodoluminescence of zinc oxide. Journal of Applied Physics. 49(3). 1188–1195. 421 indexed citations breakdown →

6.

Bylander, E. G.. (1971). Materials for Semiconductor Functions. CERN Document Server (European Organization for Nuclear Research). 5 indexed citations

7.

Bylander, E. G. & M. Hass. (1966). Dielectric constant and fundamental lattice frequency of lead telluride. Solid State Communications. 4(1). 51–53. 18 indexed citations

8.

Bylander, E. G.. (1966). Reproducible preparation of Sn1−xPbxTe epitaxial films with moderate carrier concentrations. Materials Science and Engineering. 1(3). 190–194. 31 indexed citations

9.

Bylander, E. G., Jack R. Dixon, Hubert Riedl, & R. B. Schoolar. (1965). Fundamental Absorption Edge of Tin Telluride. Physical Review. 138(3A). A864–A865. 22 indexed citations

10.

Bylander, E. G., et al.. (1965). Lead salt epitaxial films with near bulk properties. Proceedings of the IEEE. 53(4). 395–396. 4 indexed citations

11.

Bylander, E. G.. (1964). Vapor Deposition of Sodium Chloride Whiskers. Journal of Applied Physics. 35(6). 1988–1988. 2 indexed citations

12.

Bylander, E. G., et al.. (1963). Source of Acceptors in Low Resistivity Vacuum-Deposited Germanium Films. Journal of Applied Physics. 34(11). 3407–3408. 7 indexed citations

13.

Bylander, E. G.. (1962). Kinetics of Silicon Crystal Growth from SiCl[sub 4] Decomposition. Journal of The Electrochemical Society. 109(12). 1171–1171. 36 indexed citations

14.

Bylander, E. G., et al.. (1960). Characteristics of a High Solar Conversion Efficiency Gallium Arsenide p-n Junction. Journal of the Optical Society of America. 50(10). 983–983. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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