Dong-Ho Ahn

453 total citations
25 papers, 372 citations indexed

About

Dong-Ho Ahn is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, Dong-Ho Ahn has authored 25 papers receiving a total of 372 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 19 papers in Materials Chemistry and 6 papers in Polymers and Plastics. Recurrent topics in Dong-Ho Ahn's work include Phase-change materials and chalcogenides (19 papers), Advanced Memory and Neural Computing (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). Dong-Ho Ahn is often cited by papers focused on Phase-change materials and chalcogenides (19 papers), Advanced Memory and Neural Computing (13 papers) and Chalcogenide Semiconductor Thin Films (12 papers). Dong-Ho Ahn collaborates with scholars based in South Korea and United States. Dong-Ho Ahn's co-authors include Ki‐Bum Kim, Dae-Hwan Kang, Kyung‐Woo Yi, J. F. Webb, Byung‐ki Cheong, Min‐Hyun Lee, Minho Kwon, In Ho Kim, Tae-Yon Lee and Jeung-hyun Jeong and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Advanced Science.

In The Last Decade

Dong-Ho Ahn

25 papers receiving 362 citations

Peers

Dong-Ho Ahn
Bob Johnson United States
D.L. Kencke United States
Won-Cheol Jeong South Korea
S. Nitta United States
R. Annunziata Italy
Ho-Kyu Kang South Korea
K. Yamakawa Japan
D. Harmon United States
R.‐P. Vollertsen Germany
Jeng Gong Taiwan
Bob Johnson United States
Dong-Ho Ahn
Citations per year, relative to Dong-Ho Ahn Dong-Ho Ahn (= 1×) peers Bob Johnson

Countries citing papers authored by Dong-Ho Ahn

Since Specialization
Citations

This map shows the geographic impact of Dong-Ho Ahn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Dong-Ho Ahn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Dong-Ho Ahn more than expected).

Fields of papers citing papers by Dong-Ho Ahn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Dong-Ho Ahn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Dong-Ho Ahn. The network helps show where Dong-Ho Ahn may publish in the future.

Co-authorship network of co-authors of Dong-Ho Ahn

This figure shows the co-authorship network connecting the top 25 collaborators of Dong-Ho Ahn. A scholar is included among the top collaborators of Dong-Ho Ahn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Dong-Ho Ahn. Dong-Ho Ahn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kim, Yewon, et al.. (2024). Growth mechanism of Ge2Sb2Te5 thin films by atomic layer deposition supercycles of GeTe and SbTe. Surfaces and Interfaces. 53. 105101–105101. 1 indexed citations
2.
Choi, Min-Woo, Ha‐Jun Sung, Bonwon Koo, et al.. (2024). Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices. Advanced Science. 11(32). 4 indexed citations
3.
Lee, Kyumin, et al.. (2024). Highly Scalable Vertical Bypass RRAM Using Interface-Type Resistive Switching Mechanism for V-Nand memory Applications. IEEE Transactions on Electron Devices. 71(12). 7970–7977. 5 indexed citations
4.
Kim, Young‐Dong, Chuljun Lee, Jinmyung Choi, et al.. (2024). Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND Memory. 1–2. 3 indexed citations
5.
Lee, Kyumin, et al.. (2023). Bypass Resistive RAM With Interface Switching-Based Resistive RAM and InGaZnO Bypass Transistor for V-NAND Applications. IEEE Electron Device Letters. 45(2). 192–195. 3 indexed citations
6.
Kim, Yewon, et al.. (2022). Composition control of conformal crystalline GeSbTe films by atomic layer deposition supercycles and tellurization annealing. Journal of Materials Chemistry C. 10(26). 9691–9698. 5 indexed citations
7.
Kim, Eun-Ha, Hyeok-Il Kwon, Su‐Jin Park, et al.. (2018). Generation of a High-Growth Influenza Vaccine Strain in MDCK Cells for Vaccine Preparedness. Journal of Microbiology and Biotechnology. 28(6). 997–1006. 13 indexed citations
8.
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10.
Song, Yoon-Jong, Su‐Jin Ahn, Youn-Seon Kang, et al.. (2011). Current status and future prospect of Phase Change Memory. 279–282. 12 indexed citations
11.
Cho, Sunglae, et al.. (2011). Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe. IEEE Electron Device Letters. 32(8). 1113–1115. 28 indexed citations
12.
Ahn, Su Jin, Yoon-Jong Song, Hoon Jeong, et al.. (2011). Reliability perspectives for high density PRAM manufacturing. 12.6.1–12.6.4. 25 indexed citations
13.
Ahn, Dong-Ho, et al.. (2011). Metal Electrode Contact Cleaning in Small Dimension Phase Change Memory. ECS Transactions. 41(5). 23–30. 1 indexed citations
14.
Ahn, Dong-Ho, Tae-Yon Lee, Jung‐Sub Wi, et al.. (2007). High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 Complete Solid Solution. Japanese Journal of Applied Physics. 46(9R). 5719–5719. 4 indexed citations
15.
Kang, Dae-Hwan, In Ho Kim, Jeung-hyun Jeong, et al.. (2006). An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode. Journal of Applied Physics. 100(5). 46 indexed citations
16.
Ahn, Dong-Ho, Byung‐ki Cheong, Minho Kwon, et al.. (2005). A nonvolatile memory based on reversible phase changes between fcc and hcp. IEEE Electron Device Letters. 26(5). 286–288. 13 indexed citations
17.
Kang, Dae-Hwan, Dong-Ho Ahn, Minho Kwon, et al.. (2004). Lower Voltage Operation of a Phase Change Memory Device with a Highly Resistive TiON Layer. Japanese Journal of Applied Physics. 43(8R). 5243–5243. 31 indexed citations
18.
Kang, Dae-Hwan, Dong-Ho Ahn, Ki‐Bum Kim, J. F. Webb, & Kyung‐Woo Yi. (2003). One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm). Journal of Applied Physics. 94(5). 3536–3542. 127 indexed citations
19.
Heo, Jung Min, et al.. (2003). Void free and low stress shallow trench isolation technology using P-SOG for sub 0.1 μm device. 132–133. 2 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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