Deng-Sung Lin

1.4k total citations
82 papers, 1.3k citations indexed

About

Deng-Sung Lin is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, Deng-Sung Lin has authored 82 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 26 papers in Materials Chemistry. Recurrent topics in Deng-Sung Lin's work include Surface and Thin Film Phenomena (29 papers), Semiconductor materials and devices (25 papers) and Advanced Chemical Physics Studies (24 papers). Deng-Sung Lin is often cited by papers focused on Surface and Thin Film Phenomena (29 papers), Semiconductor materials and devices (25 papers) and Advanced Chemical Physics Studies (24 papers). Deng-Sung Lin collaborates with scholars based in Taiwan, United States and Germany. Deng-Sung Lin's co-authors include T.‐C. Chiang, T. Miller, E. S. Hirschorn, Timothy A. Miller, Ruping Chen, J. E. Greene, R. Tsu, D. Lubben, Hawoong Hong and Peng Chen and has published in prestigious journals such as Physical Review Letters, Nature Communications and The Journal of Chemical Physics.

In The Last Decade

Deng-Sung Lin

81 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Deng-Sung Lin Taiwan 21 812 614 532 137 121 82 1.3k
Geunseop Lee South Korea 21 1.0k 1.2× 378 0.6× 450 0.8× 172 1.3× 191 1.6× 82 1.3k
Th. Bertrams Germany 15 624 0.8× 331 0.5× 716 1.3× 232 1.7× 59 0.5× 23 1.2k
A. Spitzer Germany 16 542 0.7× 465 0.8× 660 1.2× 147 1.1× 49 0.4× 31 1.2k
G. Rangelov Germany 23 833 1.0× 398 0.6× 511 1.0× 133 1.0× 93 0.8× 52 1.2k
K. Jacobi Germany 22 814 1.0× 391 0.6× 691 1.3× 137 1.0× 92 0.8× 41 1.2k
Noboru Takeuchi Mexico 16 756 0.9× 281 0.5× 386 0.7× 133 1.0× 130 1.1× 65 974
A. Sgarlata Italy 23 809 1.0× 665 1.1× 566 1.1× 366 2.7× 153 1.3× 90 1.3k
K. Meinel Germany 22 664 0.8× 200 0.3× 625 1.2× 127 0.9× 184 1.5× 62 1.2k
C. Ottaviani Italy 19 1.2k 1.5× 436 0.7× 1.4k 2.6× 138 1.0× 76 0.6× 65 1.8k

Countries citing papers authored by Deng-Sung Lin

Since Specialization
Citations

This map shows the geographic impact of Deng-Sung Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Deng-Sung Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Deng-Sung Lin more than expected).

Fields of papers citing papers by Deng-Sung Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Deng-Sung Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Deng-Sung Lin. The network helps show where Deng-Sung Lin may publish in the future.

Co-authorship network of co-authors of Deng-Sung Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Deng-Sung Lin. A scholar is included among the top collaborators of Deng-Sung Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Deng-Sung Lin. Deng-Sung Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Liu, Chia‐Chi, et al.. (2021). Imaging buried objects with the hard/soft x-ray photoemission electron microscope. Journal of Applied Physics. 130(17). 1 indexed citations
2.
Lin, Deng-Sung, et al.. (2021). How dissociated fragments of multiatomic molecules saturate all active surface sites—H2O adsorption on the Si(100) surface. Journal of Physics Condensed Matter. 33(40). 404004–404004. 8 indexed citations
3.
Hsu, Chia-Hsiu, et al.. (2019). Extended α-phase Bi atomic layer on Si(1 1 1) fabricated by thermal desorption. Applied Surface Science. 504. 144103–144103. 7 indexed citations
4.
Hsu, Chia-Hsiu, et al.. (2019). Controlling the Polarity of the Molecular Beam Epitaxy Grown In-Bi Atomic Film on the Si(111) Surface. Scientific Reports. 9(1). 756–756. 5 indexed citations
5.
Chen, Peng, Woei Wu Pai, Yang‐Hao Chan, et al.. (2018). Large quantum-spin-Hall gap in single-layer 1T′ WSe2. Nature Communications. 9(1). 2003–2003. 126 indexed citations
6.
Lin, Deng-Sung, et al.. (2016). Ordered 2D Structure Formed upon the Molecular Beam Epitaxy Growth of Ge on the Silicene/Ag(111) Surface. ACS Omega. 1(3). 357–362. 5 indexed citations
7.
Lin, Deng-Sung, et al.. (2015). Bonding and interface formation for Si on Ag(1 1 1) by core-level photoemission spectroscopy. Applied Surface Science. 354. 212–215. 6 indexed citations
8.
Li, Hongdao, et al.. (2011). Energetics and Interactions of Mixed Halogen Adsorbates on the Si(100) Surface. The Journal of Physical Chemistry C. 115(27). 13268–13274. 8 indexed citations
9.
Lin, Deng-Sung, et al.. (2011). Adsorption of Diatomic Interhalogens on the Si(100) and Ge(100) Surfaces. The Journal of Physical Chemistry C. 115(27). 13262–13267. 6 indexed citations
10.
11.
Hsieh, Ming-Feng, et al.. (2010). Formation, Binding, and Stability of O-Ag-CO2-Ag-O Compounds on Ag(100) Investigated by Low Temperature Scanning Tunneling Microscopy and Manipulation. The Journal of Physical Chemistry C. 114(33). 14173–14179. 5 indexed citations
12.
Arima, Kenta, Jiang Peng, Deng-Sung Lin, Albert Verdaguer, & Miquel Salmerón. (2009). Ion Segregation and Deliquescence of Alkali Halide Nanocrystals on SiO2. The Journal of Physical Chemistry A. 113(35). 9715–9720. 12 indexed citations
13.
Lin, C. T., et al.. (2005). Atomistic View of the Recombinative Desorption ofH2fromH/Si(100). Physical Review Letters. 94(19). 196103–196103. 9 indexed citations
14.
Lin, Deng-Sung, et al.. (2003). Atomistics of Ge Deposition on Si(100) by Atomic Layer Epitaxy. Physical Review Letters. 90(4). 46102–46102. 36 indexed citations
15.
Hung, Wei‐Hsiu, et al.. (2002). Thermal reactions on the Cl-terminated SiGe(100) surface. Surface Science. 507-510. 295–299. 6 indexed citations
16.
Chen, Ruping & Deng-Sung Lin. (2000). Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy. Surface Science. 454-456. 196–200. 1 indexed citations
17.
Lin, Deng-Sung, et al.. (1999). Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study. Surface Science. 424(1). 7–18. 59 indexed citations
18.
Hong, Hawoong, et al.. (1995). X-ray study of the interface. Surface Science. 339(1-2). L891–L896. 2 indexed citations
19.
20.
Huang, C. C., Tai Min, Deng-Sung Lin, Bo Zhou, & John W. Goodby. (1990). Electro-optical and thermal studies of one ferroelectric liquid-crystal compound with a polarization sign reversal. Journal de physique. 51(16). 1749–1757. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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