D. S. Shang

1.2k total citations
36 papers, 1.0k citations indexed

About

D. S. Shang is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Polymers and Plastics. According to data from OpenAlex, D. S. Shang has authored 36 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 15 papers in Materials Chemistry and 14 papers in Polymers and Plastics. Recurrent topics in D. S. Shang's work include Advanced Memory and Neural Computing (26 papers), Transition Metal Oxide Nanomaterials (14 papers) and Magnetic and transport properties of perovskites and related materials (12 papers). D. S. Shang is often cited by papers focused on Advanced Memory and Neural Computing (26 papers), Transition Metal Oxide Nanomaterials (14 papers) and Magnetic and transport properties of perovskites and related materials (12 papers). D. S. Shang collaborates with scholars based in China, Hong Kong and Singapore. D. S. Shang's co-authors include Lidong Chen, Rui Dong, Xinghua Li, Qiuhong Wang, Baogen Shen, Jirong Sun, B. G. Shen, J. R. Sun, Lei Shi and Fei Zhuge and has published in prestigious journals such as Advanced Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

D. S. Shang

33 papers receiving 1.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. S. Shang China 17 912 528 371 229 151 36 1.0k
Shangqing Liu China 7 670 0.7× 428 0.8× 248 0.7× 242 1.1× 97 0.6× 11 811
X. Chen United States 9 543 0.6× 459 0.9× 171 0.5× 240 1.0× 86 0.6× 18 747
Yimin Cui China 17 691 0.8× 379 0.7× 290 0.8× 245 1.1× 76 0.5× 53 916
Yongdan Zhu China 18 544 0.6× 693 1.3× 213 0.6× 267 1.2× 74 0.5× 53 1.0k
Yisong Lin China 10 662 0.7× 214 0.4× 219 0.6× 93 0.4× 322 2.1× 15 777
Ilona Skorupa Germany 14 623 0.7× 319 0.6× 201 0.5× 150 0.7× 177 1.2× 39 779
I. R. Hwang South Korea 11 1.4k 1.5× 635 1.2× 669 1.8× 108 0.5× 220 1.5× 19 1.5k
Xinghua Li China 10 398 0.4× 382 0.7× 130 0.4× 229 1.0× 52 0.3× 20 567
Kai-Huang Chen Taiwan 19 858 0.9× 386 0.7× 315 0.8× 58 0.3× 160 1.1× 78 948
J.T. Moon South Korea 9 1.0k 1.1× 413 0.8× 365 1.0× 69 0.3× 141 0.9× 22 1.1k

Countries citing papers authored by D. S. Shang

Since Specialization
Citations

This map shows the geographic impact of D. S. Shang's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. S. Shang with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. S. Shang more than expected).

Fields of papers citing papers by D. S. Shang

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. S. Shang. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. S. Shang. The network helps show where D. S. Shang may publish in the future.

Co-authorship network of co-authors of D. S. Shang

This figure shows the co-authorship network connecting the top 25 collaborators of D. S. Shang. A scholar is included among the top collaborators of D. S. Shang based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. S. Shang. D. S. Shang is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Li, Yi, Ning Lin, Danian Dong, et al.. (2025). Brain‐Inspired In‐Memory Data Pruning and Computing with TaO x Mem‐Selectors. Advanced Materials. 37(43). e02168–e02168. 1 indexed citations
3.
Shang, D. S., et al.. (2025). Effects of different pulse widths on acute tibial nerve stimulation for overactive bladder in cats. European journal of medical research. 30(1). 186–186.
4.
5.
Li, Junjie, D. S. Shang, Yayi Wei, et al.. (2024). A Two‐Step Dry Etching Model for Non‐Uniform Etching Profile in Gate‐All‐Around Field‐Effect Transistor Manufacturing. Small. 20(51). e2405574–e2405574.
6.
7.
Shang, D. S., et al.. (2011). Local resistance switching at grain and grain boundary surfaces of polycrystalline tungsten oxide films. Nanotechnology. 22(25). 254008–254008. 43 indexed citations
8.
Shi, Lei, et al.. (2011). Direct observation of local resistance switching in WO3 films. Journal of Physics D Applied Physics. 44(20). 205302–205302. 2 indexed citations
9.
Dong, C.Y., D. S. Shang, Lijian Shi, et al.. (2011). Roles of silver oxide in the bipolar resistance switching devices with silver electrode. Applied Physics Letters. 98(7). 44 indexed citations
10.
Yang, Rui, Xinghua Li, Yu Wang, et al.. (2010). Endurance improvement of resistance switching behaviors in the La0.7Ca0.3MnO3 film based devices with Ag–Al alloy top electrodes. Journal of Applied Physics. 107(6). 20 indexed citations
11.
Shi, Lei, D. S. Shang, Jirong Sun, & Baogen Shen. (2010). Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure. physica status solidi (RRL) - Rapid Research Letters. 4(12). 344–346. 16 indexed citations
12.
Shang, D. S., et al.. (2009). Electronic transport and colossal electroresistance in SrTiO3:Nb-based Schottky junctions. Applied Physics Letters. 94(5). 45 indexed citations
13.
Yang, Rui, Yu Wang, X. D. Gao, et al.. (2009). The polarity origin of the bipolar resistance switching behaviors in metal/La0.7Ca0.3MnO3/Pt junctions. Applied Physics Letters. 95(7). 47 indexed citations
14.
Li, Songlin, et al.. (2009). Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes. Journal of Applied Physics. 105(3). 65 indexed citations
15.
Shang, D. S., et al.. (2009). Crystallinity dependence of resistance switching in La0.7Ca0.3MnO3 films grown by pulsed laser deposition. Journal of Applied Physics. 105(6). 26 indexed citations
16.
Wei-dong, YU, Xiaomin Li, Feng Wu, D. S. Shang, & Lidong Chen. (2008). Effects of oxygen partial pressure on the resistance switching properties of La 0.7 Ca 0.3 MnO 3 thin films prepared by pulsed laser deposition method. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6984. 698439–698439. 3 indexed citations
17.
Shang, D. S., et al.. (2007). Asymmetric fatigue and its endurance improvement in resistance switching of Ag–La0.7Ca0.3MnO3–Pt heterostructures. Journal of Physics D Applied Physics. 40(17). 5373–5376. 9 indexed citations
18.
Shang, D. S., et al.. (2006). Effect of carrier trapping on the hysteretic current-voltage characteristics inAg∕La0.7Ca0.3MnO3∕Ptheterostructures. Physical Review B. 73(24). 322 indexed citations
19.
Wang, Q., Rui Dong, D. S. Shang, et al.. (2006). RESISTANCE SWITCHING EFFECT OF Ag/Ln1−x CaxMnO3/Pt SANDWICH STRUCTURE. Integrated ferroelectrics. 78(1). 207–213. 1 indexed citations
20.
Wang, Q., D. S. Shang, Zhenghao Wu, Lidong Chen, & X.M. Li. (2006). “Positive” and “negative” electric-pulse-induced reversible resistance switching effect in Pr0.7Ca0.3MnO3 films. Applied Physics A. 86(3). 357–360. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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