Chen-Han Lin

532 total citations
34 papers, 375 citations indexed

About

Chen-Han Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Ceramics and Composites. According to data from OpenAlex, Chen-Han Lin has authored 34 papers receiving a total of 375 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 6 papers in Materials Chemistry and 3 papers in Ceramics and Composites. Recurrent topics in Chen-Han Lin's work include Semiconductor materials and devices (27 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Advanced Memory and Neural Computing (22 papers). Chen-Han Lin is often cited by papers focused on Semiconductor materials and devices (27 papers), Ferroelectric and Negative Capacitance Devices (23 papers) and Advanced Memory and Neural Computing (22 papers). Chen-Han Lin collaborates with scholars based in United States, Taiwan and Hong Kong. Chen-Han Lin's co-authors include Yue Kuo, Chun‐Liang Chen, Yann Hung, Chung‐Yuan Mou, Jiang Lu, Way Kuo, Meng‐Hsin Chen, Lung‐Chang Liu, Chiu‐Chun Lai and Hsin‐Lung Chen and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Chen-Han Lin

33 papers receiving 371 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Chen-Han Lin United States 12 208 134 54 41 39 34 375
Shafiq Ismathullakhan Hong Kong 9 209 1.0× 223 1.7× 98 1.8× 20 0.5× 47 1.2× 14 366
Ivita Bite Latvia 11 128 0.6× 283 2.1× 31 0.6× 14 0.3× 47 1.2× 31 355
Zachary Ruff United Kingdom 10 275 1.3× 50 0.4× 34 0.6× 37 0.9× 41 1.1× 18 379
Jérôme Gleize France 11 127 0.6× 232 1.7× 46 0.9× 33 0.8× 146 3.7× 22 344
Satoshi Ota Japan 10 232 1.1× 223 1.7× 59 1.1× 11 0.3× 49 1.3× 24 471
Jun Young Kim South Korea 12 169 0.8× 225 1.7× 23 0.4× 13 0.3× 60 1.5× 22 338
Xiunan Yan China 12 49 0.2× 161 1.2× 138 2.6× 74 1.8× 164 4.2× 15 396
Akira Yamauchi Japan 11 200 1.0× 28 0.2× 21 0.4× 30 0.7× 60 1.5× 41 326
Seung Hyuk Back South Korea 12 400 1.9× 273 2.0× 18 0.3× 27 0.7× 66 1.7× 17 524
Carolina Clausell Spain 12 110 0.5× 281 2.1× 79 1.5× 8 0.2× 26 0.7× 33 381

Countries citing papers authored by Chen-Han Lin

Since Specialization
Citations

This map shows the geographic impact of Chen-Han Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Chen-Han Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Chen-Han Lin more than expected).

Fields of papers citing papers by Chen-Han Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Chen-Han Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Chen-Han Lin. The network helps show where Chen-Han Lin may publish in the future.

Co-authorship network of co-authors of Chen-Han Lin

This figure shows the co-authorship network connecting the top 25 collaborators of Chen-Han Lin. A scholar is included among the top collaborators of Chen-Han Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Chen-Han Lin. Chen-Han Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Hung, Yann, et al.. (2014). Enzyme Encapsulated Hollow Silica Nanospheres for Intracellular Biocatalysis. ACS Applied Materials & Interfaces. 6(9). 6883–6890. 115 indexed citations
2.
3.
Lin, Chen-Han & Yue Kuo. (2011). Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications. Journal of The Electrochemical Society. 159(3). H214–H219. 9 indexed citations
4.
Lin, Chen-Han & Yue Kuo. (2011). Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories. Journal of Applied Physics. 110(2). 30 indexed citations
5.
Lin, Chen-Han & Yue Kuo. (2011). Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories – Material and Electrical Properties. Journal of The Electrochemical Society. 158(8). H756–H756. 11 indexed citations
6.
Lin, Chen-Han & Yue Kuo. (2011). Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films. ECS Transactions. 35(2). 249–255. 3 indexed citations
7.
Kuo, Yue, et al.. (2011). Poly-Si Thin Film Formation Using a Novel Low Thermal Budget Process. MRS Proceedings. 1321. 1 indexed citations
8.
Lin, Chen-Han & Yue Kuo. (2010). Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric. Electrochemical and Solid-State Letters. 13(3). H83–H83. 17 indexed citations
9.
Kuo, Yue, et al.. (2010). Stress-Induced Deterioration of Nanocrystalline ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions. 33(3). 307–311. 2 indexed citations
10.
Kuo, Yue, et al.. (2010). Temperature Influence on Nanocrystals Embedded High-k Nonvolatile C–V Characteristics. Electrochemical and Solid-State Letters. 14(1). H50–H50. 8 indexed citations
11.
Kuo, Yue, et al.. (2009). Failure Analysis of Single and Dual nc-ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions. 25(6). 457–464. 3 indexed citations
12.
Kuo, Yue, et al.. (2009). Reliability of nc-ZnO Embedded ZrHfO High-kNonvolatile Memory Devices Stressed at High Temperatures. MRS Proceedings. 1160. 3 indexed citations
13.
Lin, Chen-Han & Yue Kuo. (2009). Single and Dual nc-ITO and nc-ZnO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions. 19(8). 81–87.
14.
Lin, Chen-Han & Yue Kuo. (2008). Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films. ECS Transactions. 16(5). 309–316. 2 indexed citations
15.
Leu, Ching‐Chich, et al.. (2008). Effects of HfO2 buffer layer thickness on the properties of Pt/SrBi2Ta2O9/HfO2/Si structure. Journal of materials research/Pratt's guide to venture capital sources. 23(7). 2023–2032. 5 indexed citations
16.
Kuo, Yue, et al.. (2008). Failure analysis of nanocrystals embedded high-k dielectrics for nonvolatile memories. 2. 46–49. 2 indexed citations
17.
18.
Lin, Chen-Han, et al.. (2007). Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film. ECS Transactions. 6(1). 121–127. 1 indexed citations
19.
Lin, Chen-Han, et al.. (2007). Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide Thin Films. ECS Transactions. 11(4). 509–518. 5 indexed citations
20.
Lu, Jiang, et al.. (2006). Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-k Memory Device. Japanese Journal of Applied Physics. 45(9L). L901–L901. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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