Changhyun Kim

569 total citations
8 papers, 62 citations indexed

About

Changhyun Kim is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Infectious Diseases. According to data from OpenAlex, Changhyun Kim has authored 8 papers receiving a total of 62 indexed citations (citations by other indexed papers that have themselves been cited), including 8 papers in Electrical and Electronic Engineering, 1 paper in Biomedical Engineering and 0 papers in Infectious Diseases. Recurrent topics in Changhyun Kim's work include Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and devices (4 papers) and Advancements in PLL and VCO Technologies (4 papers). Changhyun Kim is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and devices (4 papers) and Advancements in PLL and VCO Technologies (4 papers). Changhyun Kim collaborates with scholars based in South Korea. Changhyun Kim's co-authors include Je Hyeong Kim, Woo-Seop Kim, Suki Kim, Jin-Hyun Kim, Jung‐Hwan Choi, Soo-In Cho, Jung-Bae Lee, Ki‐Whan Song, Seung-Moon Yoo and Deog‐Kyoon Jeong and has published in prestigious journals such as IEEE Access, IEEE Journal of Solid-State Circuits and IEEE Transactions on Electron Devices.

In The Last Decade

Changhyun Kim

8 papers receiving 60 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Changhyun Kim South Korea 5 60 19 11 7 1 8 62
D. Q. Bui United States 2 28 0.5× 13 0.7× 14 1.3× 6 0.9× 3 30
Nikolaos Minas United Kingdom 5 50 0.8× 17 0.9× 8 0.7× 2 0.3× 1 1.0× 9 50
S. Masuoka Japan 7 109 1.8× 17 0.9× 31 2.8× 9 1.3× 1 1.0× 11 116
K. Isobe Japan 5 69 1.1× 17 0.9× 4 0.4× 15 2.1× 13 75
Damien Croain France 5 109 1.8× 24 1.3× 20 1.8× 3 0.4× 2 2.0× 9 112
Seok-Hun Hyun South Korea 4 46 0.8× 7 0.4× 21 1.9× 16 2.3× 1 1.0× 7 51
S. Loffredo Italy 5 32 0.5× 18 0.9× 6 0.5× 6 0.9× 4 4.0× 8 34
M. Higashitani Japan 3 43 0.7× 7 0.4× 5 0.5× 14 2.0× 3 46
Dan Perry Belgium 6 87 1.4× 15 0.8× 14 1.3× 9 1.3× 4 4.0× 13 94
Daehyun Kwon South Korea 8 170 2.8× 67 3.5× 8 0.7× 10 1.4× 16 171

Countries citing papers authored by Changhyun Kim

Since Specialization
Citations

This map shows the geographic impact of Changhyun Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Changhyun Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Changhyun Kim more than expected).

Fields of papers citing papers by Changhyun Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Changhyun Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Changhyun Kim. The network helps show where Changhyun Kim may publish in the future.

Co-authorship network of co-authors of Changhyun Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Changhyun Kim. A scholar is included among the top collaborators of Changhyun Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Changhyun Kim. Changhyun Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

8 of 8 papers shown
1.
Park, Jun Hui, Rock‐Hyun Baek, Dae Hwan Kim, et al.. (2024). Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access. 12. 23881–23886. 2 indexed citations
2.
Choi, Sungju, Sangwon Lee, Jingyu Park, et al.. (2022). Fowler–Nordheim Stress-Induced Degradation of Buried-Channel-Array Transistors in DRAM Cell for Cryogenic Memory Applications. IEEE Transactions on Electron Devices. 70(1). 48–52. 2 indexed citations
3.
Ko, Han-Gon, et al.. (2021). A 1.05-to-3.2 GHz All-Digital PLL for DDR5 Registering Clock Driver With a Self-Biased Supply-Noise-Compensating Ring DCO. IEEE Transactions on Circuits & Systems II Express Briefs. 69(3). 759–763. 5 indexed citations
4.
Kang, Myounggon, Ki‐Whan Song, Hoeju Chung, et al.. (2007). SCR-based ESD Protection for High Bandwidth DRAMs. 41. 208–211. 3 indexed citations
5.
Kim, Jin-Hyun, Je Hyeong Kim, Woo-Seop Kim, et al.. (2005). A 4-Gb/s/pin low-power memory I/O interface using 4-level simultaneous bi-directional signaling. IEEE Journal of Solid-State Circuits. 40(1). 89–101. 21 indexed citations
6.
Kim, Kyu Hyun, Jung-Bae Lee, Woojin Lee, et al.. (2004). A 1.4 Gb/s DLL using 2nd order charge-pump scheme with low phase/duty error for high-speed DRAM application. 212–523 Vol.1. 11 indexed citations
7.
Kim, Jin-Hyun, Je Hyeong Kim, Woo-Seop Kim, et al.. (2004). A 4Gb/s/pin 4-level simultaneous bidirectional I/O using a 500MHz clock for high-speed memory. 248–525. 6 indexed citations
8.
Kim, Changhyun, et al.. (1997). Low-voltage, high-speed circuit designs for gigabit DRAMs. IEEE Journal of Solid-State Circuits. 32(5). 642–648. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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