C.-A. Berseth

459 total citations
30 papers, 386 citations indexed

About

C.-A. Berseth is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, C.-A. Berseth has authored 30 papers receiving a total of 386 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 24 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in C.-A. Berseth's work include Semiconductor Lasers and Optical Devices (26 papers), Photonic and Optical Devices (23 papers) and Semiconductor Quantum Structures and Devices (22 papers). C.-A. Berseth is often cited by papers focused on Semiconductor Lasers and Optical Devices (26 papers), Photonic and Optical Devices (23 papers) and Semiconductor Quantum Structures and Devices (22 papers). C.-A. Berseth collaborates with scholars based in Switzerland, Germany and France. C.-A. Berseth's co-authors include A. Rudra, A. Syrbu, E. Kapon, G. Suruceanu, A. Mereuta, A. Caliman, A. Mircéa, F. K. Reinhart, E. Kapon and J. Behrend and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

In The Last Decade

C.-A. Berseth

28 papers receiving 357 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.-A. Berseth Switzerland 13 366 274 27 21 13 30 386
T. Wipiejewski United States 11 422 1.2× 181 0.7× 23 0.9× 16 0.8× 9 0.7× 40 435
M. Svilans Canada 10 321 0.9× 229 0.8× 16 0.6× 39 1.9× 6 0.5× 21 330
J. Boucart Switzerland 13 361 1.0× 225 0.8× 19 0.7× 25 1.2× 15 1.2× 36 377
T. Sugie Japan 14 485 1.3× 166 0.6× 39 1.4× 16 0.8× 8 0.6× 37 506
J.J. Dudley United States 10 414 1.1× 302 1.1× 21 0.8× 8 0.4× 8 0.6× 23 419
Laurent Fulbert France 9 297 0.8× 218 0.8× 34 1.3× 16 0.8× 34 2.6× 30 329
D. Z. Tsang United States 11 297 0.8× 203 0.7× 16 0.6× 12 0.6× 34 2.6× 36 332
T. Kominato Japan 13 602 1.6× 237 0.9× 13 0.5× 16 0.8× 17 1.3× 37 616
Y. Nishitani Japan 9 226 0.6× 179 0.7× 21 0.8× 14 0.7× 23 1.8× 22 256
N. Ohnoki Japan 9 406 1.1× 244 0.9× 11 0.4× 26 1.2× 5 0.4× 23 411

Countries citing papers authored by C.-A. Berseth

Since Specialization
Citations

This map shows the geographic impact of C.-A. Berseth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.-A. Berseth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.-A. Berseth more than expected).

Fields of papers citing papers by C.-A. Berseth

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.-A. Berseth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.-A. Berseth. The network helps show where C.-A. Berseth may publish in the future.

Co-authorship network of co-authors of C.-A. Berseth

This figure shows the co-authorship network connecting the top 25 collaborators of C.-A. Berseth. A scholar is included among the top collaborators of C.-A. Berseth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.-A. Berseth. C.-A. Berseth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Boucart, J., G. Suruceanu, P. Royo, et al.. (2006). 3.125-Gb/s modulation up to 70/spl deg/C using 1.3-/spl mu/m VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications. IEEE Photonics Technology Letters. 18(4). 571–573. 14 indexed citations
2.
3.
Syrbu, A., A. Mereuta, A. Caliman, et al.. (2005). 1325 nm VCSELs emitting 1.2 mW single mode output in the 20-80°C temperature range. OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005.. 3 pp. Vol. 4–3 pp. Vol. 4. 1 indexed citations
4.
Syrbu, A., V. Iakovlev, G. Suruceanu, et al.. (2005). VCSELs emitting in the 1310-nm waveband for novel optical communication applications. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 5737. 167–167. 6 indexed citations
5.
Sirbu, A., A. Mereuta, A. Mircéa, et al.. (2004). VCSELs emitting in the 1550 nm waveband with 0.6 mW single mode output in 20-80/spl deg/C temperature range. Optical Fiber Communication Conference. 2. 1 indexed citations
6.
Syrbu, A., A. Mircéa, A. Mereuta, et al.. (2004). 1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs. IEEE Photonics Technology Letters. 16(5). 1230–1232. 60 indexed citations
7.
Mereuta, A., A. Syrbu, V. Iakovlev, et al.. (2004). 1.5μm VCSEL structure optimization for high-power and high-temperature operation. Journal of Crystal Growth. 272(1-4). 520–525. 19 indexed citations
8.
Syrbu, A., V. Iakovlev, G. Suruceanu, et al.. (2002). 1 mW CW 38 nm Tunable 1.5 μm VCSELS with Tuning Voltage Below 4 V. European Conference on Optical Communication. 5. 1–2. 1 indexed citations
9.
Syrbu, A., A. Rudra, C.-A. Berseth, et al.. (2002). Novel InGaAsP/AlGaAs multiple-wavelength electrically pumped vertical cavity lasers emitting in the 1.5 μm waveband. 1–1. 1 indexed citations
10.
11.
Syrbu, A., et al.. (1998). Room-temperature pulsed operation of 1.52 μm vertical cavity lasers obtained by localised fusion. Conference on Lasers and Electro-Optics Europe. 33. CMH2–CMH2. 1 indexed citations
12.
Syrbu, A., C.-A. Berseth, A. Rudra, et al.. (1998). 30°C CW operation of 1.52 µm InGaAsP/AlGaAsvertical cavity laserswith in situ built-in lateral current confinement by localised fusion. Electronics Letters. 34(18). 1744–1745. 18 indexed citations
13.
Behrend, J., J.‐F. Carlin, A. Sirbu, et al.. (1998). InAsP/InGaAsP periodic gain structure for 1.5 μm vertical cavity surface emitting laser applications. Journal of Crystal Growth. 188(1-4). 295–299. 4 indexed citations
14.
Syrbu, A., J. Behrend, J.‐F. Carlin, et al.. (1998). Thermal stability of InP-based structures for wafer fused laser diodes. Journal of Crystal Growth. 188(1-4). 338–342. 5 indexed citations
15.
Berseth, C.-A., et al.. (1998). Experimental method for high-accuracy reflectivity-spectrum measurements. Applied Optics. 37(28). 6671–6671. 12 indexed citations
16.
Berseth, C.-A., et al.. (1998). Highly accurate measurement of reflectivity andoptical absorption in distributed Bragg reflectors using wafer fused resonator. Electronics Letters. 34(17). 1666–1667. 1 indexed citations
17.
Syrbu, A., C.-A. Berseth, A. Rudra, et al.. (1998). Quasi-CW Room Temperature Operation of 1.52 µm InGaAsP/AlGaAs Vertical Cavity Lasers Obtained by Localised Fusion. Japanese Journal of Applied Physics. 37(11R). 6016–6016. 1 indexed citations
18.
Syrbu, A., J. Behrend, C.-A. Berseth, et al.. (1997). InGaAs/InGaAsP/InP edge emitting laser diodes on p -GaAs substrates obtained by localised wafer fusion. Electronics Letters. 33(10). 866–868. 25 indexed citations
19.
Houdré, R., et al.. (1992). InGaAs/GaAs vertical cavity surface emitting laser with hybrid top mirror. Microelectronic Engineering. 18(3). 267–272. 1 indexed citations
20.
Berseth, C.-A., et al.. (1992). The electro-optic coefficients of GaAs: Measurements at 1.32 and 1.52 μm and study of their dispersion between 0.9 and 10 μm. Journal of Applied Physics. 71(6). 2821–2825. 38 indexed citations

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