C. Werkhoven

915 total citations
36 papers, 672 citations indexed

About

C. Werkhoven is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Physical and Theoretical Chemistry. According to data from OpenAlex, C. Werkhoven has authored 36 papers receiving a total of 672 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 11 papers in Physical and Theoretical Chemistry. Recurrent topics in C. Werkhoven's work include Semiconductor materials and devices (14 papers), Photochemistry and Electron Transfer Studies (11 papers) and Semiconductor Quantum Structures and Devices (10 papers). C. Werkhoven is often cited by papers focused on Semiconductor materials and devices (14 papers), Photochemistry and Electron Transfer Studies (11 papers) and Semiconductor Quantum Structures and Devices (10 papers). C. Werkhoven collaborates with scholars based in Netherlands, United States and Belgium. C. Werkhoven's co-authors include Brian Fitzpatrick, R. N. Bhargava, P. J. Dean, D C Herbert, J.D.W. van Voorst, J. Langelaar, R.P.H. Rettschnick, S. P. Herko, C. van Opdorp and R. W. Carpenter and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

C. Werkhoven

35 papers receiving 633 citations

Peers

C. Werkhoven

EEE

AMPO

PTC

CMP

L. A. Heimbrook United States

Hendrik Veenvliet Netherlands

B. Laurich United States

Uichi Itoh Japan

D. Coulman United States

L. Goodwin United Kingdom

C.G. Cureton United Kingdom

A. J. Schell-Sorokin United States

Marian E. Hills United States

John F. Dobson Australia

L. A. Heimbrook United States

C. Werkhoven

273 ×0.6

EEE

347 ×0.9

AMPO

118 ×0.4

151 ×1.3

PTC

34 ×0.4

CMP

Citations per year, relative to C. Werkhoven C. Werkhoven (= 1×) peers L. A. Heimbrook

Countries citing papers authored by C. Werkhoven

Since Specialization

Citations

This map shows the geographic impact of C. Werkhoven's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Werkhoven with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Werkhoven more than expected).

Fields of papers citing papers by C. Werkhoven

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Werkhoven. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Werkhoven. The network helps show where C. Werkhoven may publish in the future.

Co-authorship network of co-authors of C. Werkhoven

This figure shows the co-authorship network connecting the top 25 collaborators of C. Werkhoven. A scholar is included among the top collaborators of C. Werkhoven based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Werkhoven. C. Werkhoven is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Datta, Ranjan, et al.. (2011). Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN. Journal of Applied Physics. 110(7). 16 indexed citations

Bertram, R., et al.. (2010). Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0001) sapphire. Scripta Materialia. 64(1). 93–96. 16 indexed citations

Dey, Sandwip K., et al.. (2004). Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function. Applied Physics Letters. 84(9). 1606–1608. 40 indexed citations

Dey, Soumik, Atanu Das, Dongdong Gu, et al.. (2004). Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemical-vapor-deposited Hf–O films on Si. Journal of Applied Physics. 95(9). 5042–5048. 24 indexed citations

Carpenter, R. W., et al.. (2003). Nanochemistry and Structure of Zr and Hf Based High Dielectric Constant Films. Microscopy and Microanalysis. 9(S02). 466–467. 2 indexed citations

Reuss, Robert H., et al.. (1993). Application of a Cluster Tool for Interface Engineering of Polysilicon Emitters. 1 indexed citations

Werkhoven, C., et al.. (1993). <title>Process control improvements realized in a vertical reactor cluster tool</title>. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 1803. 332–344. 2 indexed citations

Merz, J. L., et al.. (1982). Shallow N acceptor in N+-implanted ZnSe. Applied Physics Letters. 40(4). 345–346. 31 indexed citations

Dean, P. J., D C Herbert, C. Werkhoven, Brian Fitzpatrick, & R. N. Bhargava. (1981). Donor bound-exciton excited states in zinc selenide. Physical review. B, Condensed matter. 23(10). 4888–4901. 174 indexed citations

10.

Werkhoven, C., Brian Fitzpatrick, S. P. Herko, R. N. Bhargava, & P. J. Dean. (1981). High-purity ZnSe grown by liquid phase epitaxy. Applied Physics Letters. 38(7). 540–542. 37 indexed citations

11.

Werkhoven, C.. (1978). Disclosure of Dislocation Loops and Dislocation Dipoles in GaP by Chemical Etching. Journal of The Electrochemical Society. 125(4). 671–673. 7 indexed citations

12.

Werkhoven, C., et al.. (1977). Effect of dislocation loops in macroscopically dislocation-free GaP substrates on the perfection of homo-epitactic deposits. Journal of Crystal Growth. 42. 632–638. 8 indexed citations

13.

Werkhoven, C. & Robert C. Peters. (1975). On the kinetics of nitrogen incorporation in GaP LPE layers using NH3 vapour doping. Journal of Crystal Growth. 31. 210–214. 6 indexed citations

14.

Werkhoven, C., et al.. (1975). Vibrational redistribution effects in the time resolved emission of isolated pyrene molecules. Chemical Physics Letters. 30(3). 504–509. 10 indexed citations

15.

Werkhoven, C., et al.. (1974). The effects of sequence congestion and weak coupling on the observed fluorescence lifetimes in different spectral regions in the case of intermediate strong coupling. Chemical Physics Letters. 27(4). 552–555. 11 indexed citations

16.

Werkhoven, C., et al.. (1974). Vibrational relaxation and intermediate strong coupling. Chemical Physics Letters. 28(1). 51–54. 5 indexed citations

17.

Werkhoven, C., et al.. (1973). Relative quantum yield of the S2 emission of naphthalene vapour. Chemical Physics Letters. 19(1). 29–31. 15 indexed citations

18.

Werkhoven, C., et al.. (1973). Fluorescence decay of pyrene vapour; biphotonic excitation and the kinetics of vibrational redistribution. Chemical Physics Letters. 18(2). 171–175. 9 indexed citations

19.

Lavalette, D., C. Werkhoven, D. Bebelaar, J. Langelaar, & J.D.W. van Voorst. (1971). Excited singlet state polarization and absorption spectra of 1,2-benzcoronene, 1,12-benzperylene and 1,2:3,4-dibenzanthracene. Chemical Physics Letters. 9(3). 230–233. 17 indexed citations

20.

Werkhoven, C., et al.. (1971). Incomplete vibrational relaxation of pyrene in its first excited singlet state in the vapour phase. Chemical Physics Letters. 9(1). 6–8. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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