C. H. L. Goodman
- Materials Chemistry top 5%
- Electrical and Electronic Engineering top 5%
- Atomic and Molecular Physics, and Optics top 5%
- Electronic, Optical and Magnetic Materials top 10%
- Ceramics and Composites top 5%
- Co-authors
- J.R. DrabbleM. PessaI. G. AustinT.P. Beales
- Topics
- Semiconductor materials and interfaces (7 papers)Chalcogenide Semiconductor Thin Films (6 papers)Advanced Semiconductor Detectors and Materials (6 papers)
- Partner nations
- United StatesIsraelUnited Kingdom
In The Last Decade
C. H. L. Goodman
35 papers receiving 1.2k citations
Peers
Comparison fields: 5 of 63
- Materials Chemistry 909
- Electrical and Electronic Engineering 778
- Atomic and Molecular Physics, and Optics 386
- Electronic, Optical and Magnetic Materials 200
- Ceramics and Composites 109
Countries citing papers authored by C. H. L. Goodman
This map shows the geographic impact of C. H. L. Goodman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. H. L. Goodman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. H. L. Goodman more than expected).
Fields of papers citing papers by C. H. L. Goodman
This network shows the impact of papers produced by C. H. L. Goodman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. H. L. Goodman. The network helps show where C. H. L. Goodman may publish in the future.
Co-authorship network of co-authors of C. H. L. Goodman
This figure shows the co-authorship network connecting the top 25 collaborators of C. H. L. Goodman. A scholar is included among the top collaborators of C. H. L. Goodman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. H. L. Goodman. C. H. L. Goodman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 1 | |
| 2 | 17 | |
| 3 | 3 | |
| 4 | 2 | |
| 5 | 23 | |
| 6 | 5 | |
| 7 | 6 | |
| 8 | 52 | |
| 9 | 3 | |
| 10 | 1 | |
| 11 | 66 | |
| 12 | Crystal growth : theory and techniques | 132 |
| 13 | 2 | |
| 14 | 1 | |
| 15 | 6 | |
| 16 | 15 | |
| 17 | 1 | |
| 18 | 163 | |
| 19 | 61 | |
| 20 | 106 |
About C. H. L. Goodman
C. H. L. Goodman is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry, having authored 35 papers that have together received 1.3k indexed citations. Recurring topics across this work include Semiconductor materials and interfaces (7 papers), Chalcogenide Semiconductor Thin Films (6 papers) and Advanced Semiconductor Detectors and Materials (6 papers). The work is most often cited by research in Materials Chemistry (909 citations), Ceramics and Composites (109 citations) and Electrical and Electronic Engineering (778 citations). C. H. L. Goodman has collaborated with scholars based in United States, Israel and United Kingdom. Frequent co-authors include J.R. Drabble, M. Pessa, I. G. Austin and T.P. Beales. Their work appears in journals such as Nature, Journal of Applied Physics and Journal of The Electrochemical Society.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.