B.K. Jones

1.3k total citations
32 papers, 386 citations indexed

About

B.K. Jones is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B.K. Jones has authored 32 papers receiving a total of 386 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in B.K. Jones's work include Semiconductor materials and devices (14 papers), Semiconductor materials and interfaces (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). B.K. Jones is often cited by papers focused on Semiconductor materials and devices (14 papers), Semiconductor materials and interfaces (12 papers) and Advancements in Semiconductor Devices and Circuit Design (11 papers). B.K. Jones collaborates with scholars based in United Kingdom, Algeria and Mexico. B.K. Jones's co-authors include M. McPherson, T. Sloan, Nouredine Sengouga, Simon Hillson, L. Dehimi, P.C. Russell, A. Richardson, A.P. Dorey, João Santana and K. Žďánský and has published in prestigious journals such as Journal of Applied Physics, Journal of Physics D Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

B.K. Jones

30 papers receiving 368 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B.K. Jones United Kingdom 11 315 185 80 28 26 32 386
Michele Swiggers United States 7 151 0.5× 59 0.3× 38 0.5× 31 1.1× 27 1.0× 7 257
Kazuhisa Taketoshi Japan 8 193 0.6× 46 0.2× 113 1.4× 9 0.3× 22 0.8× 20 261
Nora Bach Germany 5 94 0.3× 146 0.8× 26 0.3× 12 0.4× 78 3.0× 9 335
C. Ito United States 12 381 1.2× 254 1.4× 51 0.6× 6 0.2× 24 0.9× 47 446
M. Petryk United States 7 396 1.3× 78 0.4× 227 2.8× 21 0.8× 61 2.3× 16 425
D. C. Edelstein United States 10 335 1.1× 309 1.7× 45 0.6× 4 0.1× 28 1.1× 16 451
R. Wörner Germany 7 272 0.9× 290 1.6× 94 1.2× 3 0.1× 11 0.4× 8 383
Adrien Rousseau France 12 131 0.4× 55 0.3× 279 3.5× 22 0.8× 71 2.7× 29 377
M. P. Chamberlain United Kingdom 9 264 0.8× 324 1.8× 197 2.5× 17 0.6× 73 2.8× 21 432
Debashis Mondal Italy 9 63 0.2× 146 0.8× 164 2.0× 15 0.5× 5 0.2× 17 262

Countries citing papers authored by B.K. Jones

Since Specialization
Citations

This map shows the geographic impact of B.K. Jones's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B.K. Jones with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B.K. Jones more than expected).

Fields of papers citing papers by B.K. Jones

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B.K. Jones. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B.K. Jones. The network helps show where B.K. Jones may publish in the future.

Co-authorship network of co-authors of B.K. Jones

This figure shows the co-authorship network connecting the top 25 collaborators of B.K. Jones. A scholar is included among the top collaborators of B.K. Jones based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B.K. Jones. B.K. Jones is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Saadoune, Achour, S.J. Moloi, L. Dehimi, et al.. (2012). Modeling of Semiconductor Detectors Made of Defect-Engineered Silicon: The Effective Space Charge Density. IEEE Transactions on Device and Materials Reliability. 13(1). 1–8. 4 indexed citations
2.
Saadoune, Achour, L. Dehimi, Nouredine Sengouga, M. McPherson, & B.K. Jones. (2006). Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics. Solid-State Electronics. 50(7-8). 1178–1182. 17 indexed citations
3.
Dehimi, L., Nouredine Sengouga, & B.K. Jones. (2003). Modelling of semi-conductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: the current–voltage characteristics. Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment. 519(3). 532–544. 10 indexed citations
4.
Jones, B.K., Nouredine Sengouga, & L. Dehimi. (2002). Relaxation semiconductor diodes: a practical review. 1. 323–326.
5.
Jones, B.K., et al.. (2002). The electrical properties of irradiated silicon: semi-insulating silicon. 49–52. 2 indexed citations
6.
Dehimi, L., Nouredine Sengouga, & B.K. Jones. (2001). The current-voltage characteristics of semiconductor diodes as they are made highly defected. Elektronika : konstrukcje, technologie, zastosowania. 42. 18–21. 2 indexed citations
7.
Jones, B.K. & M. McPherson. (1999). Radiation damaged silicon as a semi-insulating relaxation semiconductor: static electrical properties. Semiconductor Science and Technology. 14(8). 667–678. 22 indexed citations
8.
Jones, B.K., et al.. (1998). Ohmic I–V characteristics in semi-insulating semiconductor diodes. Solid State Communications. 105(9). 547–549. 17 indexed citations
9.
Jones, B.K., et al.. (1998). A comparison of the trap properties and locations within GaAs field effect transistors measured under different bias conditions. IEEE Transactions on Electron Devices. 45(8). 1663–1670. 3 indexed citations
10.
Jones, B.K., et al.. (1998). Negative capacitance effects in semiconductor diodes. Solid State Communications. 107(2). 47–50. 113 indexed citations
11.
McPherson, M., B.K. Jones, & T. Sloan. (1997). Effects of radiation damage in silicon p - i - n photodiodes. Semiconductor Science and Technology. 12(10). 1187–1194. 45 indexed citations
12.
Žďánský, K., B.K. Jones, João Santana, & T. Sloan. (1996). Numerical analysis of charge transport in semi-insulating GaAs with two contacts. Journal of Applied Physics. 79(7). 3611–3618. 21 indexed citations
13.
Jones, B.K., et al.. (1996). The effect of traps at the free surface of GaAs field effect transistors. Journal of Applied Physics. 80(11). 6340–6348. 5 indexed citations
14.
Mzerd, A., D. Sayah, P.C. Russell, & B.K. Jones. (1990). Capacitance measurements on AuCd1−yZnyS polycrystalline schottky diodes. physica status solidi (a). 121(1). 333–339. 1 indexed citations
15.
Jones, B.K., et al.. (1990). Characterisation of the time-dependent properties of GaAs FETs. Semiconductor Science and Technology. 5(5). 395–403. 12 indexed citations
16.
Jones, B.K., et al.. (1989). The stability of polycrystalline silicon thin film resistors measured using excess noise. Microelectronics Reliability. 29(4). 543–544. 2 indexed citations
17.
Jones, B.K., et al.. (1988). A conductance DLTS system to analyse multiple exponential decays. Semiconductor Science and Technology. 3(11). 1083–1093. 6 indexed citations
18.
Jones, B.K. & P.C. Russell. (1988). Temperature dependence of the MOS mobility degradation. IEE Proceedings I Solid State and Electron Devices. 135(4). 94–94. 4 indexed citations
19.
Jones, B.K., et al.. (1988). Output characteristic stabilisation of power MOSFETs. IEE Proceedings I Solid State and Electron Devices. 135(4). 91–91. 1 indexed citations
20.
Jones, B.K., et al.. (1987). The non-ideal current in bipolar transistors. Solid-State Electronics. 30(9). 987–989. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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