Bal Govind Vats
- Materials Chemistry
- Inorganic Chemistry top 5%
- Industrial and Manufacturing Engineering top 5%
- Mechanical Engineering
- Electrical and Electronic Engineering
- Co-authors
- Pallavi SinghalVandana PulhaniSanjay JhaS. KannanAshok K. YadavSuman NeogyMukesh KumarRohan Phatak
- Topics
- Radioactive element chemistry and processing (22 papers)Nuclear Materials and Properties (12 papers)Lanthanide and Transition Metal Complexes (10 papers)
- Partner nations
- IndiaUnited KingdomAustralia
In The Last Decade
Bal Govind Vats
39 papers receiving 540 citations
Peers
Comparison fields: 5 of 56
- Materials Chemistry 350
- Inorganic Chemistry 253
- Industrial and Manufacturing Engineering 110
- Mechanical Engineering 90
- Electrical and Electronic Engineering 79
Countries citing papers authored by Bal Govind Vats
This map shows the geographic impact of Bal Govind Vats's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bal Govind Vats with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bal Govind Vats more than expected).
Fields of papers citing papers by Bal Govind Vats
This network shows the impact of papers produced by Bal Govind Vats. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bal Govind Vats. The network helps show where Bal Govind Vats may publish in the future.
Co-authorship network of co-authors of Bal Govind Vats
This figure shows the co-authorship network connecting the top 25 collaborators of Bal Govind Vats. A scholar is included among the top collaborators of Bal Govind Vats based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Bal Govind Vats. Bal Govind Vats is excluded from the visualization to improve readability, since they are connected to all nodes in the network.
All Works
| # | Work | Indexed citations |
|---|---|---|
| 1 | 2 | |
| 2 | 5 | |
| 3 | 2 | |
| 4 | 1 | |
| 5 | 5 | |
| 6 | 21 | |
| 7 | 13 | |
| 8 | 84 | |
| 9 | 7 | |
| 10 | 7 | |
| 11 | 3 | |
| 12 | 10 | |
| 13 | 14 | |
| 14 | 30 | |
| 15 | 12 | |
| 16 | 20 | |
| 17 | 32 | |
| 18 | 8 | |
| 19 | 31 | |
| 20 | 9 |
About Bal Govind Vats
Bal Govind Vats is a scholar working on Inorganic Chemistry, Industrial and Manufacturing Engineering and Materials Chemistry, having authored 39 papers that have together received 545 indexed citations. Recurring topics across this work include Radioactive element chemistry and processing (22 papers), Nuclear Materials and Properties (12 papers) and Lanthanide and Transition Metal Complexes (10 papers). The work is most often cited by research in Inorganic Chemistry (253 citations), Industrial and Manufacturing Engineering (110 citations) and Materials Chemistry (350 citations). Bal Govind Vats has collaborated with scholars based in India, United Kingdom and Australia. Frequent co-authors include Pallavi Singhal, Vandana Pulhani, Sanjay Jha, S. Kannan, Ashok K. Yadav, Suman Neogy, Mukesh Kumar, Rohan Phatak, Meera Keskar and Shanmugaperumal Kannan. Their work appears in journals such as Journal of Hazardous Materials, Langmuir and ACS Applied Materials & Interfaces.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.