B. N. Chapman

1.1k total citations · 1 hit paper
23 papers, 894 citations indexed

About

B. N. Chapman is a scholar working on Mechanics of Materials, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, B. N. Chapman has authored 23 papers receiving a total of 894 indexed citations (citations by other indexed papers that have themselves been cited), including 11 papers in Mechanics of Materials, 10 papers in Electrical and Electronic Engineering and 5 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in B. N. Chapman's work include Metal and Thin Film Mechanics (8 papers), Semiconductor materials and devices (7 papers) and Plasma Diagnostics and Applications (7 papers). B. N. Chapman is often cited by papers focused on Metal and Thin Film Mechanics (8 papers), Semiconductor materials and devices (7 papers) and Plasma Diagnostics and Applications (7 papers). B. N. Chapman collaborates with scholars based in United Kingdom, United States and Mexico. B. N. Chapman's co-authors include J. L. Vossen, V. J. Minkiewicz, H. Godwin, P. Echlin, W. Fuller, Tom ap Rees, S.M. Thomas, David Campbell, Neil Heiman and Patrick Echlin and has published in prestigious journals such as Nature, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

B. N. Chapman

21 papers receiving 829 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Glow Discharge Processes: Sputtering and Plasma Etching

1981 433 citations B. N. Chapman et al. profile →

Peers

B. N. Chapman

EEE

MM

MC

CM

AMPO

M. Pietralla Germany

A. Franks United Kingdom

Viatcheslav Berejnov Canada

Pavel Bulkin France

David Schaefer United States

Mariko Suzuki Japan

Alexander I. Zhmakin Russia

Shuxiao Zhang China

Oliver Klein Germany

Osamu Tada Japan

M. Pietralla Germany

B. N. Chapman

161 ×0.3

EEE

180 ×0.6

MM

471 ×1.6

MC

61 ×0.5

CM

125 ×1.3

AMPO

Citations per year, relative to B. N. Chapman B. N. Chapman (= 1×) peers M. Pietralla

Countries citing papers authored by B. N. Chapman

Since Specialization

Citations

This map shows the geographic impact of B. N. Chapman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. N. Chapman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. N. Chapman more than expected).

Fields of papers citing papers by B. N. Chapman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. N. Chapman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. N. Chapman. The network helps show where B. N. Chapman may publish in the future.

Co-authorship network of co-authors of B. N. Chapman

This figure shows the co-authorship network connecting the top 25 collaborators of B. N. Chapman. A scholar is included among the top collaborators of B. N. Chapman based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. N. Chapman. B. N. Chapman is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Chapman, B. N., et al.. (1986). The role of gas phase reactions, electron impact, and collisional energy transfer processes relevant to plasma etching of polysilicon with H2 and Cl2. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 4(6). 1292–1300. 13 indexed citations

2.

Chapman, B. N., et al.. (1986). Summary Abstract: Collisional energy transfer in noble gas/hydrogen plasmas. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 4(3). 1796–1797. 7 indexed citations

3.

Echlin, Patrick, et al.. (1985). Very low voltage sputter coating. Journal of Microscopy. 137(2). 155–169. 5 indexed citations

4.

Chapman, B. N., et al.. (1980). The implication of flow-rate dependencies in plasma etching. Journal of Applied Physics. 51(7). 3608–3613. 22 indexed citations

5.

Minkiewicz, V. J. & B. N. Chapman. (1979). Triode plasma etching. Applied Physics Letters. 34(3). 192–193. 17 indexed citations

6.

Chapman, B. N. & V. J. Minkiewicz. (1978). Flow rate effects in plasma etching. Journal of Vacuum Science and Technology. 15(2). 329–332. 42 indexed citations

7.

Chapman, B. N., et al.. (1976). Electron effects in magnetron sputtering. Journal of Vacuum Science and Technology. 13(1). 165–168. 11 indexed citations

8.

Chapman, B. N., et al.. (1975). Current-pressure transitions in a magnetically supported dc sputtering system. Applied Physics Letters. 27(4). 189–190. 2 indexed citations

9.

Rees, Tom ap, S.M. Thomas, W. Fuller, & B. N. Chapman. (1975). Location of gluconeogenesis from phosphoenolpyruvate in cotyledons of Cucurbita pepo. Biochimica et Biophysica Acta (BBA) - General Subjects. 385(1). 145–156. 31 indexed citations

10.

Chapman, B. N.. (1974). Thin-film adhesion. Journal of Vacuum Science and Technology. 11(1). 106–113. 135 indexed citations

11.

Chapman, B. N., et al.. (1974). Abstract: Electron effects in sputtering. Journal of Vacuum Science and Technology. 11(1). 42–42. 1 indexed citations

12.

Chapman, B. N., et al.. (1974). Electron effects in sputtering and cosputtering. Journal of Applied Physics. 45(5). 2115–2120. 23 indexed citations

13.

Chapman, B. N., et al.. (1972). Charge effects at the film - substrate interface. Vacuum. 22(11). 535–537. 10 indexed citations

14.

Chapman, B. N., et al.. (1972). Comments on the use of the appearance potential spectrometer. Vacuum. 22(11). 557–559. 1 indexed citations

15.

Chapman, B. N., et al.. (1972). Charge effects in thin film adhesion. Thin Solid Films. 13(1). 157–161. 26 indexed citations

16.

Chapman, B. N.. (1971). Focusing effects in sputter deposition. Thin Solid Films. 8(5). R41–R45. 2 indexed citations

17.

Chapman, B. N. & David Campbell. (1969). Condensation of high-energy atomic beams. Journal of Physics C Solid State Physics. 2(2). 200–209. 11 indexed citations

18.

Chapman, B. N., et al.. (1969). Initial growth of thin films; the fractional nucleation rate concept. Journal of Physics C Solid State Physics. 2(9). 1550–1559. 12 indexed citations

19.

Godwin, H., P. Echlin, & B. N. Chapman. (1967). The development of the pollen grain wall in Ipomoea purpurea (L.) Roth. Review of Palaeobotany and Palynology. 3(1-4). 181–195. 68 indexed citations

20.

Chapman, B. N.. (1967). Polystyrene Replicas for Scanning Reflexion Electron Microscopy. Nature. 216(5122). 1347–1348. 9 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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