B. Armas

546 total citations
36 papers, 432 citations indexed

About

B. Armas is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Materials Chemistry. According to data from OpenAlex, B. Armas has authored 36 papers receiving a total of 432 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Electrical and Electronic Engineering, 17 papers in Ceramics and Composites and 15 papers in Materials Chemistry. Recurrent topics in B. Armas's work include Advanced ceramic materials synthesis (17 papers), Semiconductor materials and devices (14 papers) and Silicon Carbide Semiconductor Technologies (10 papers). B. Armas is often cited by papers focused on Advanced ceramic materials synthesis (17 papers), Semiconductor materials and devices (14 papers) and Silicon Carbide Semiconductor Technologies (10 papers). B. Armas collaborates with scholars based in France, Spain and Morocco. B. Armas's co-authors include C. Combescure, António Figueras, R. Rodrı́guez-Clemente, B. Aspar, M. Allibert, F. Trombe, F. Henry, Jean-Lοuis Robert, Christian Chatillon and J. Durand and has published in prestigious journals such as Journal of The Electrochemical Society, Journal of Materials Science and Solar Energy.

In The Last Decade

B. Armas

34 papers receiving 411 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
B. Armas France 13 187 163 141 121 113 36 432
Jonathan H. Harris United States 5 173 0.9× 114 0.7× 76 0.5× 99 0.8× 160 1.4× 6 356
T. Adachi Japan 12 242 1.3× 185 1.1× 35 0.2× 84 0.7× 90 0.8× 27 453
S. L. DOLE United States 11 399 2.1× 142 0.9× 125 0.9× 333 2.8× 65 0.6× 13 628
W. Spengler Germany 6 285 1.5× 168 1.0× 270 1.9× 31 0.3× 132 1.2× 7 481
I. M. Vinitskii Ukraine 3 261 1.4× 104 0.6× 128 0.9× 112 0.9× 56 0.5× 7 490
W. Robert Sinclair United States 12 188 1.0× 277 1.7× 114 0.8× 43 0.4× 95 0.8× 30 443
U. Wahlström Sweden 11 389 2.1× 224 1.4× 489 3.5× 51 0.4× 153 1.4× 11 608
C.V. Deshpandey United States 13 376 2.0× 261 1.6× 323 2.3× 28 0.2× 49 0.4× 48 594
G. Pfeiffer United States 11 348 1.9× 225 1.4× 39 0.3× 99 0.8× 38 0.3× 35 521
Hongbo Zuo China 12 234 1.3× 106 0.7× 84 0.6× 61 0.5× 23 0.2× 29 390

Countries citing papers authored by B. Armas

Since Specialization
Citations

This map shows the geographic impact of B. Armas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. Armas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. Armas more than expected).

Fields of papers citing papers by B. Armas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. Armas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. Armas. The network helps show where B. Armas may publish in the future.

Co-authorship network of co-authors of B. Armas

This figure shows the co-authorship network connecting the top 25 collaborators of B. Armas. A scholar is included among the top collaborators of B. Armas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. Armas. B. Armas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Armas, B., et al.. (2001). Low-pressure chemical vapour deposition of mullite layers using a cold-wall reactor. Surface and Coatings Technology. 141(1). 88–95. 8 indexed citations
2.
Armas, B., Miguel de Icaza, & F. Sibieude. (2000). Deposition of aluminium nitride coatings using a cold wall CVD reactor. Surface and Coatings Technology. 123(2-3). 199–203. 1 indexed citations
3.
Berjoan, R., et al.. (1998). Studies of LPCVD Al–Fe–O deposits by XPS, EELS and Mössbauer spectroscopies. Surface and Coatings Technology. 105(1-2). 31–37. 6 indexed citations
4.
Henry, F., B. Armas, R. Berjoan, C. Combescure, & C. Dupuy. (1997). Low pressure chemical vapour deposition of AlN-Si3N4 codeposits. Journal of the European Ceramic Society. 17(15-16). 1803–1806. 2 indexed citations
5.
Henry, F., et al.. (1997). Nanostructure and local chemical composition of AlNSi3N4 layers grown by LPCVD. Thin Solid Films. 304(1-2). 256–266. 13 indexed citations
6.
Henry, F., et al.. (1995). Transmission Electron Microscopy Studies of (AIN-Si3N4) Codeposits Obtained by LPCVD. Journal de Physique IV (Proceedings). 5(C5). C5–905. 1 indexed citations
7.
Madigou, V., S. Veintemillas‐Verdaguer, R. Rodrı́guez-Clemente, et al.. (1995). Thermodynamic analysis of metalorganic chemical vapour deposition of SiC using tetramethylsilane as precursor. II. Influence of the minoritary tetramethylsilane pyrolysis byproducts in the preferred crystallization of SiC layers. Journal of Crystal Growth. 148(4). 390–395. 9 indexed citations
8.
Kihn, Y., et al.. (1994). Transmission electron microscopy studies of AlN deposits. Journal of the European Ceramic Society. 13(4). 345–353. 11 indexed citations
9.
Aspar, B., et al.. (1994). Auger studies of chemical bonds and oxygen minimization in the interfaces between AlN and SiC thin films deposited by LPCVD. Applied Surface Science. 81(1). 55–62. 1 indexed citations
10.
Aspar, B., et al.. (1994). An in-situ study of the oxidation of AlN layers fabricated by LPCVD using X-ray diffraction. Journal of the European Ceramic Society. 13(4). 339–344. 5 indexed citations
11.
Aspar, B., et al.. (1991). Organometallic chemical vapour deposition in the Al-O-N system. Journal of the European Ceramic Society. 8(4). 251–256. 4 indexed citations
12.
Aspar, B., et al.. (1991). CHEMICAL VAPOUR DEPOSITION OF THE Al-O-N SYSTEM. Journal de Physique IV (Proceedings). 2(C2). C2–665. 1 indexed citations
13.
Figueras, António, et al.. (1991). A morphological and structural study of SiC layers obtained by LPCVD using tetramethylsilane. Journal of Crystal Growth. 110(3). 528–542. 38 indexed citations
14.
Figueras, António, R. Rodrı́guez-Clemente, José Santiso, et al.. (1991). INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE. Journal de Physique IV (Proceedings). 2(C2). C2–225. 4 indexed citations
15.
Armas, B., et al.. (1981). Determination of the boron-rich side of the BSi phase diagram. Journal of the Less Common Metals. 82. 245–254. 51 indexed citations
16.
Robert, Jean-Lοuis, et al.. (1981). Preparation and study of the electrical properties of n-type boron and SiB alloys with a high boron concentration. Journal of the Less Common Metals. 82. 137–142. 18 indexed citations
17.
Combescure, C., et al.. (1981). Kinetic Study of Boron Tribromide Pyrolysis at Low Pressure. Journal of The Electrochemical Society. 128(2). 358–361. 8 indexed citations
18.
Armas, B., et al.. (1976). Fabrication and study of electrical properties of boron-silicon compounds with high boron concentration. Journal of the Less Common Metals. 47. 135–140. 34 indexed citations
19.
Armas, B., C. Combescure, & F. Trombe. (1976). Chemical Vapor Deposition of NbB2 and TaB2 through Heating by Concentration of Solar Radiation. Journal of The Electrochemical Society. 123(2). 308–310. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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