B. A. Lombos

561 total citations
34 papers, 449 citations indexed

About

B. A. Lombos is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, B. A. Lombos has authored 34 papers receiving a total of 449 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 19 papers in Atomic and Molecular Physics, and Optics and 15 papers in Materials Chemistry. Recurrent topics in B. A. Lombos's work include Semiconductor Quantum Structures and Devices (15 papers), Advanced Semiconductor Detectors and Materials (7 papers) and Chalcogenide Semiconductor Thin Films (6 papers). B. A. Lombos is often cited by papers focused on Semiconductor Quantum Structures and Devices (15 papers), Advanced Semiconductor Detectors and Materials (7 papers) and Chalcogenide Semiconductor Thin Films (6 papers). B. A. Lombos collaborates with scholars based in Canada, France and United States. B. A. Lombos's co-authors include C. Sándorfy, P. Sauvageau, Jean‐Pol Dodelet, J.I. Dickson, Daniel Bélanger, M. Avérous, C. Fau, D. Côté, Jean‐Pol Dodelet and A. Jean and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and The Journal of Physical Chemistry.

In The Last Decade

B. A. Lombos

34 papers receiving 405 citations

Peers

B. A. Lombos

AMPO

EEE

MC

SPECT

AS

S. L. Bennett United Kingdom

S. Kakar United States

F. D. Medina United States

G. Perluzzo Canada

G. T. Surratt United States

C. M. Wong United States

T. Sekitani Japan

Sin‐Shong Lin United States

Tomohiko Hirooka Japan

A. Pellégatti France

S. L. Bennett United Kingdom

B. A. Lombos

220 ×0.9

AMPO

151 ×0.7

EEE

126 ×0.8

MC

72 ×0.8

SPECT

32 ×0.5

AS

Citations per year, relative to B. A. Lombos B. A. Lombos (= 1×) peers S. L. Bennett

Countries citing papers authored by B. A. Lombos

Since Specialization

Citations

This map shows the geographic impact of B. A. Lombos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by B. A. Lombos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites B. A. Lombos more than expected).

Fields of papers citing papers by B. A. Lombos

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by B. A. Lombos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by B. A. Lombos. The network helps show where B. A. Lombos may publish in the future.

Co-authorship network of co-authors of B. A. Lombos

This figure shows the co-authorship network connecting the top 25 collaborators of B. A. Lombos. A scholar is included among the top collaborators of B. A. Lombos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with B. A. Lombos. B. A. Lombos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

1.

Lombos, B. A., et al.. (1991). Three dimensional superlattice in Pb1−χGdχTe (Wigner's crystallization). Journal of Magnetism and Magnetic Materials. 93. 391–394. 1 indexed citations

2.

Dodelet, J. P., et al.. (1991). Electrical Characterization of GaAs Epitaxial Layers Grown by CSVT from Zn‐doped GaAs Sources. Journal of The Electrochemical Society. 138(3). 830–834. 4 indexed citations

3.

Bretagnon, T., et al.. (1991). Midgap electron traps in n-type GaAs epitaxial layers grown by the close-spaced vapor transport technique. Canadian Journal of Physics. 69(3-4). 407–411. 1 indexed citations

4.

Paynter, R.W., et al.. (1989). Doping of GaAs epitaxial layers grown on (100) GaAs by close-spaced vapor transport. Canadian Journal of Physics. 67(4). 251–258. 11 indexed citations

5.

Dodelet, J. P., et al.. (1988). Charge Density Profiles of Close Spaced Vapor Transport GaAs Epitaxial Layers. Journal of The Electrochemical Society. 135(10). 2634–2640. 3 indexed citations

6.

Bélanger, Daniel, Jean‐Pol Dodelet, & B. A. Lombos. (1986). Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes. Journal of The Electrochemical Society. 133(6). 1113–1119. 12 indexed citations

7.

Lombos, B. A., D. Côté, Jean‐Pol Dodelet, M. F. Lawrence, & J.I. Dickson. (1986). Thermodynamic equilibrium displacement controlled epitaxial growth of GaAs. Journal of Crystal Growth. 79(1-3). 455–462. 7 indexed citations

8.

Côté, D., Jean‐Pol Dodelet, B. A. Lombos, & J.I. Dickson. (1986). Epitaxy of GaAs by the Close‐Spaced Vapor Transport Technique. Journal of The Electrochemical Society. 133(9). 1925–1934. 24 indexed citations

9.

Lombos, B. A., et al.. (1986). Vacancy Doping of GaAs. physica status solidi (a). 96(2). 663–675. 5 indexed citations

10.

Avérous, M., B. A. Lombos, C. Fau, et al.. (1986). Magneto transport results on a new semimagnetic semiconductor with rare earth: Pb1-xGdxTe. Journal of Magnetism and Magnetic Materials. 54-57. 1543–1544. 2 indexed citations

11.

Avérous, M., et al.. (1985). Pb_1−xGd_xTe a New Semimagnetic Semiconductor with Rare Earths. physica status solidi (b). 131(2). 759–768. 14 indexed citations

12.

Fau, C., et al.. (1985). Magneto transport measurements on semi magnetic semiconductor Hg1−xFexTe. Solid State Communications. 54(9). 811–815. 8 indexed citations

13.

Lombos, B. A.. (1985). Deep levels in semiconductors. Canadian Journal of Chemistry. 63(7). 1666–1671. 20 indexed citations

14.

Bélanger, Daniel, Jean‐Pol Dodelet, Lê H. Dao, & B. A. Lombos. (1984). Photoelectrochemical characteristics and behavior of a surfactant aluminum phthalocyanine cell. The Journal of Physical Chemistry. 88(19). 4288–4295. 7 indexed citations

15.

Fau, C., et al.. (1984). Three‐Band Model Applied to Narrow‐Gap HgCdTe. physica status solidi (b). 125(2). 831–838. 18 indexed citations

16.

Lombos, B. A., et al.. (1982). Compensation by deep levels in semi-insulating GaAs. Canadian Journal of Physics. 60(1). 35–40. 6 indexed citations

17.

Lombos, B. A., et al.. (1982). GRAIN BOUNDARIES INTRODUCED DEEP LEVELS IN POLYSILICON. Le Journal de Physique Colloques. 43(C1). C1–199. 3 indexed citations

18.

Lombos, B. A., et al.. (1976). Pressure induced phase transitions of mercury chalcogenides. Canadian Journal of Physics. 54(1). 48–55. 3 indexed citations

19.

Kipling, Arlin L., et al.. (1975). Band structure energy of ternary alloys. Journal of Physics and Chemistry of Solids. 36(7-8). 677–681. 1 indexed citations

20.

Lombos, B. A., et al.. (1975). Mercury chalcogenides, zero gap semiconductors†. Journal of Physics and Chemistry of Solids. 36(11). 1193–1198. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact