A. Goltzené

886 total citations
74 papers, 693 citations indexed

About

A. Goltzené is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, A. Goltzené has authored 74 papers receiving a total of 693 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 42 papers in Atomic and Molecular Physics, and Optics and 27 papers in Materials Chemistry. Recurrent topics in A. Goltzené's work include Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (17 papers) and Chalcogenide Semiconductor Thin Films (14 papers). A. Goltzené is often cited by papers focused on Semiconductor materials and devices (18 papers), Semiconductor materials and interfaces (17 papers) and Chalcogenide Semiconductor Thin Films (14 papers). A. Goltzené collaborates with scholars based in France, China and United States. A. Goltzené's co-authors include C. Schwab, Bertrand Meyer, H. J. von Bardeleben, Robert S. Feigelson, H. Launois, Christophe Vieu, M. Mejias, S. Nikitine, Hans Christoph Wolf and D. S. Chemla and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. Goltzené

71 papers receiving 641 citations

Peers

Countries citing papers authored by A. Goltzené

Since Specialization

Citations

This map shows the geographic impact of A. Goltzené's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Goltzené with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Goltzené more than expected).

Fields of papers citing papers by A. Goltzené

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Goltzené. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Goltzené. The network helps show where A. Goltzené may publish in the future.

Co-authorship network of co-authors of A. Goltzené

This figure shows the co-authorship network connecting the top 25 collaborators of A. Goltzené. A scholar is included among the top collaborators of A. Goltzené based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Goltzené. A. Goltzené is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Temperature evolution of multiple tunnel junction devices made with disordered two-dimensional arrays of metallic islands 1999 ·Applied Physics Letters ·A. Pépin, Christophe Vieu, M. Mejias, (unknown), F. Carcenac, J. Giérak, Christin David, Laurent Couraud, H. Launois, (unknown), (unknown), A. Goltzené	17
2	Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR 1991 ·Applied Surface Science ·(unknown), (unknown), A. Goltzené, Bernabé Marí Soucase, Bertrand Meyer, C. Schwab	6
3	Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide 1990 ·Journal of Crystal Growth ·Ju Wu, (unknown), (unknown), (unknown), (unknown), A. Goltzené, C. Schwab, (unknown), (unknown)	1
4	Charge Transfer as an Alternative to Metastability of Defects in Semi-Insulating GaAs? 1990 ·Japanese Journal of Applied Physics ·(unknown), (unknown), A. Goltzené, Bernard Mari, Bertrand Meyer, C. Schwab	5
5	Electron paramagnetic resonance of plastically deformed semiconductors : a short review 1987 ·Revue de Physique Appliquée ·A. Goltzené	3
6	Electron Paramagnetic Resonance Analysis of Strain‐Induced Defects in Semi‐Insulating GaAs 1986 ·physica status solidi (b) ·(unknown), A. Goltzené, C. Schwab, (unknown), (unknown)	7
7	Preferential ion location and structural stability in CsCdCl3 1985 ·Journal of Physics and Chemistry of Solids ·(unknown), A. Goltzené, B. K. Meyer, C. Schwab, D. Elwell, Robert S. Feigelson	17
8	Experimental evidence for an associated defect model for the neutron generated ASGa center in gallium arsenide 1984 ·Radiation Effects ·A. Goltzené, Bertrand Meyer, C. Schwab	3
9	Fast neutron damage in tetrahedral AB8− Compounds: Effects of ionicity 1984 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·A. Goltzené, Bertrand Meyer, C. Schwab	2
10	Résonance paramagnétique de défauts générés par irradiation neutronique dans l'arséniure de gallium 1983 ·Revue de Physique Appliquée ·A. Goltzené, Bertrand Meyer, C. Schwab	10
11	Electron paramagnetic resonance of extended defects in semi-insulating GaAs 1982 ·Journal of Applied Physics ·A. Goltzené, Bertrand Meyer, C. Schwab	7
12	Deep center characterization by optically-controlled paramagnetic resonance in AgGaS2 1981 ·Journal of Applied Physics ·H. J. von Bardeleben, A. Goltzené, C. Schwab, Robert S. Feigelson	10
13	Electron paramagnetic resonance of an iron-associated defect in AgGaS2 1980 ·Physical review. B, Condensed matter ·H. J. von Bardeleben, A. Goltzené, C. Schwab, Robert S. Feigelson	7
14	Effects of iron content and stoichiometry on the coloration of CuGaS2 1978 ·physica status solidi (a) ·H. J. von Bardeleben, A. Goltzené, Bertrand Meyer, C. Schwab	12
15	Electron Paramagnetic Resonance of Two Stoichiometry‐Induced Intrinsic Defect Centres in CuGaS₂ 1976 ·physica status solidi (b) ·H. J. von Bardeleben, A. Goltzené, C. Schwab	23
16	S⁻ and Se⁻ centers in the cuprous halides 1975 ·physica status solidi (b) ·A. Goltzené, Bertrand Meyer, C. Schwab, K. Cho	4
17	Electron Spin Resonance of Shallow Level Carriers in CuCl 1975 ·physica status solidi (b) ·A. Goltzené, C. Schwab	7
18	Stoichiometry of the ternary semiconductor CuGaS2 : 57Fe as determined by Mössbauer spectroscopy 1975 ·Journal of Applied Physics ·H. J. von Bardeleben, A. Goltzené, C. Schwab, J.M. Friedt, R. Poinsot	12
19	Nonlinear properties of cuprous halides 1971 ·IEEE Journal of Quantum Electronics ·D. S. Chemla, Ph. Kupecek, Craig P. Schwartz, C. Schwab, A. Goltzené	35
20	Utilisation des mesures magnétiques pour l'étude de la luminescence anorganique 1968 ·Journal de physique ·(unknown), A. Goltzené, Cristina Martí	1

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact