A. A. Tonkikh

555 total citations
54 papers, 450 citations indexed

About

A. A. Tonkikh is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. A. Tonkikh has authored 54 papers receiving a total of 450 indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 25 papers in Materials Chemistry. Recurrent topics in A. A. Tonkikh's work include Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (18 papers) and Silicon Nanostructures and Photoluminescence (18 papers). A. A. Tonkikh is often cited by papers focused on Semiconductor Quantum Structures and Devices (47 papers), Semiconductor Lasers and Optical Devices (18 papers) and Silicon Nanostructures and Photoluminescence (18 papers). A. A. Tonkikh collaborates with scholars based in Russia, Germany and Austria. A. A. Tonkikh's co-authors include P. Werner, V. G. Talalaev, G. É. Cirlin, J. Schilling, Christian Eisenschmidt, G. Schmidt, V. M. Ustinov, В. Г. Дубровский, N. D. Zakharov and L. E. Vorobjev and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Applied Surface Science.

In The Last Decade

A. A. Tonkikh

50 papers receiving 427 citations

Peers

A. A. Tonkikh
Kalyan Nunna United States
Nizami Vagidov United States
J.S. Roberts United Kingdom
A. Kalburge United States
Kamil Sladek Germany
B. J. Vartanian United States
A. A. Tonkikh
Citations per year, relative to A. A. Tonkikh A. A. Tonkikh (= 1×) peers A. I. Toropov

Countries citing papers authored by A. A. Tonkikh

Since Specialization
Citations

This map shows the geographic impact of A. A. Tonkikh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. A. Tonkikh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. A. Tonkikh more than expected).

Fields of papers citing papers by A. A. Tonkikh

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. A. Tonkikh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. A. Tonkikh. The network helps show where A. A. Tonkikh may publish in the future.

Co-authorship network of co-authors of A. A. Tonkikh

This figure shows the co-authorship network connecting the top 25 collaborators of A. A. Tonkikh. A scholar is included among the top collaborators of A. A. Tonkikh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. A. Tonkikh. A. A. Tonkikh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gomez‐Iglesias, Alvaro, et al.. (2019). Surface-Emitting Superluminescent Diode Arrays. 8. 1–1. 1 indexed citations
2.
Rangel-Kuoppa, Victor-Tapio, et al.. (2016). Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy. Nanotechnology. 27(7). 75705–75705. 1 indexed citations
3.
Rangel-Kuoppa, Victor-Tapio, et al.. (2013). Observation of negative differential capacitance (NDC) in Ti Schottky diodes on SiGe islands. AIP conference proceedings. 373–374. 1 indexed citations
4.
Tonkikh, A. A. & P. Werner. (2013). Surfactant-mediated Stranski-Krastanov islands. physica status solidi (b). 250(9). 1795–1798. 15 indexed citations
5.
Rangel-Kuoppa, Victor-Tapio, A. A. Tonkikh, P. Werner, & W. Jantsch. (2013). Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance. Science and Technology of Advanced Materials. 14(3). 35005–35005. 1 indexed citations
6.
Aleshkin, V. Ya., А. А. Дубинов, М. Н. Дроздов, et al.. (2013). Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells. Semiconductors. 47(5). 636–640. 1 indexed citations
7.
Tonkikh, A. A., N. D. Zakharov, Eckhard Pippel, & P. Werner. (2011). Sb-modified growth of stacked Ge/Si(100) quantum dots. Thin Solid Films. 519(11). 3669–3673. 7 indexed citations
8.
Tonkikh, A. A., Н. Д. Захаров, А. В. Новиков, et al.. (2011). Sb mediated Ge/Si(100) quantum dots for Si based photonics. 69. 92–94. 1 indexed citations
9.
Firsov, D. A., L. E. Vorobjev, V. Yu. Panevin, et al.. (2007). LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING. International Journal of Nanoscience. 6(03n04). 241–244. 1 indexed citations
10.
Sobolev, M. M., G. É. Cirlin, & A. A. Tonkikh. (2007). DLTS study of the Wannier–Stark effect in Ge/Si QD superlattices. Physica B Condensed Matter. 401-402. 576–579. 5 indexed citations
11.
Tonkikh, A. A., G. É. Cirlin, V. G. Talalaev, N. D. Zakharov, & P. Werner. (2006). Room temperature electroluminescence from multilayer GeSi heterostructures. physica status solidi (a). 203(6). 1390–1394. 6 indexed citations
12.
Tonkikh, A. A., G. É. Cirlin, Yu. B. Samsonenko, et al.. (2006). The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy. Semiconductors. 40(5). 587–591. 1 indexed citations
13.
Cirlin, G. É., A. A. Tonkikh, В. Г. Дубровский, et al.. (2005). Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots. Physics of the Solid State. 47(1). 58–62. 3 indexed citations
14.
Musikhin, Yu. G., G. É. Cirlin, В. Г. Дубровский, et al.. (2005). The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system. Semiconductors. 39(7). 820–825. 6 indexed citations
15.
Talalaev, V. G., Jens W. Tomm, N. D. Zakharov, et al.. (2004). Spectroscopy of exciton states of InAs quantum molecules. Semiconductors. 38(6). 696–701.
16.
Zakharov, N. D., V. G. Talalaev, G. É. Cirlin, A. A. Tonkikh, & P. Werner. (2003). TEM Microstructure Investigation of Si/Ge Superlattice Exhibiting 1.55 μm Photoluminescence at Room Temperature. Microscopy and Microanalysis. 9(S03). 282–283.
17.
Tonkikh, A. A., et al.. (2003). Temperature dependence of the quantum dot lateral size in the Ge/Si(100) system. physica status solidi (b). 236(1). 14 indexed citations
18.
Sizov, D. S., Yu. B. Samsonenko, A. A. Tonkikh, et al.. (2003). Structural and optical properties of InAs quantum dots in AlGaAs matrix. Semiconductors. 37(5). 559–563. 6 indexed citations
19.
Tonkikh, A. A., et al.. (2002). Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells. Technical Physics Letters. 28(5). 434–436.
20.
Cirlin, G. É., V. N. Petrov, A. A. Tonkikh, et al.. (2000). 1.3-1.4 µm photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates. Nanotechnology. 11(4). 323–326. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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