Yue‐Ming Hsin

Evidence for Two Mg Related Acceptors in GaN

Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN

A review of Ga2O3 materials, processing, and devices

Luminescence properties of defects in GaN

Fabrication and characterisation of enhanced barrierAlGaN/GaN HFET

Zinc oxide nanostructures and their applications

Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study

Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

Etching of Ga-face and N-face GaN by Inductively Coupled Plasma

AlGaN/GaN HEMTs-an overview of device operation and applications

Effects of low energy e‐beam irradiation on cathodoluminescence from GaN

Ohmic contacts to Gallium Nitride materials

GaN: Processing, defects, and devices

Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation

Zinc Oxide—From Synthesis to Application: A Review

Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

High temperature thermoelectric properties of optimized InGaN

Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures

Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain

Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well

Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Temperature-dependent study of n-ZnO∕p-GaN diodes

Device characteristics of the GaN/InGaN-doped channel HFETs

Investigation of Cr- and Al-based metals for the reflector and Ohmic contact on n-GaN in GaN flip-chip light-emitting diodes

P/He ion implant isolation technology for AlGaN/GaNHFETs