Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
2014 StandoutNature
Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon
2012
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Effect of Controlled Growth Dynamics on the Microstructure of Nonpolar a-Plane GaN Revealed by X-ray Diffraction
2009
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
Atomic-scale nanofacet structure in semipolar $(20\bar{2}\bar{1})$ and $(20\bar{2}1)$ InGaN single quantum wells
2014 StandoutNobel
Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2010 StandoutNobel
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
2008
Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition
2009
Electron localization by a donor in the vicinity of a basal stacking fault in GaN
2009
Measurement of electron overflow in 450 nm InGaN light-emitting diode structures
2009 StandoutNobel
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
2011
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
2010
Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
2011 StandoutNobel
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 StandoutNobel
Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies
2013
Temperature Dependence of the Piezotronic Effect in ZnO Nanowires
2013
Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes
2012
Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
2013 StandoutNobel
Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
2009
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Ohmic Cathode Electrode on the Backside of m-Plane and (2021) Bulk GaN Substrates for Optical Device Applications
2011 StandoutNobel
Thick InGaN Growth by Metal Organic Vapor Phase Epitaxy with Sputtered InGaN Buffer Layer
2013 StandoutNobel
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
2007
Nonpolara-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
2011 StandoutNobel
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
2013 StandoutNobel
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2013 StandoutNobel
Discussion on electrical characteristics of i-In0.13Ga0.87N p-i-n photovoltaics by using a single/multi-antireflection layer
2010
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers
2008
Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
2017
Development and prospects of nitride materials and devices with nonpolar surfaces
2008
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE
2007 StandoutNobel
Semi‐polar nitride surfaces and heterostructures
2010
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy
2010
Understanding nonpolar GaN growth through kinetic Wulff plots
2008
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Polarization fields in wurtzite strained layers grown on () planes
2008
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
2009
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
2011
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
2011
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
2014 StandoutNobel
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
2010
Recombination coefficients of GaN-based laser diodes
2011
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes
2011 StandoutNobel
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
2012
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
2010
Strain in Si doped GaN and the Fermi level effect
2011
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Hexagonal-based pyramid void defects in GaN and InGaN
2012
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Efficiency droop in nitride‐based light‐emitting diodes
2010
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN
2009
Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
2008
Efficiency droop in light‐emitting diodes: Challenges and countermeasures
2013
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
2013 StandoutNobel
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
2012
X-ray diffraction of III-nitrides
2009
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
2009
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Electrical characteristics of contacts to thin film N-polar n-type GaN
2008
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Works of X. Ni being referenced
InGaN based light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p‐GaN
2011
Effect of carrier spillover and Auger recombination on the efficiency droop in InGaN-based blue LEDs
2009
On the reduction of efficiency loss in polar c ‐plane and non‐polar m ‐plane InGaN light emitting diodes
2011
Near-field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN
2006
InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide
2010
Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
2010
Local electronic and optical behaviors of a-plane GaN grown via epitaxial lateral overgrowth
2007
Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy
2006
Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition
2007
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them
2010
Epitaxial lateral overgrowth of (112¯2) semipolar GaN on (11¯00) m-plane sapphire by metalorganic chemical vapor deposition
2007
Study of SiNx and SiO2 passivation of GaN surfaces
2007
Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers
2007
Optimization of a-plane GaN growth by MOCVD on r-plane sapphire
2006
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
2007
InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes
2010
On carrier spillover in c- and m-plane InGaN light emitting diodes
2009
Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth
2006
Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes
2009
Ballistic transport in InGaN-based LEDs: impact on efficiency
2010
Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy
2006
The effect of ballistic and quasi‐ballistic electrons on the efficiency droop of InGaN light emitting diodes
2010