Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Two-dimensionalD−centers
1990
Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas
2016 StandoutNobel
Quantum dot solar cells
2002 Standout
Attosecond nonlinear polarization and light–matter energy transfer in solids
2016 StandoutNatureNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Transition-metal impurities in semiconductors and heterojunction band lineups
1988
Single-electron capacitance spectroscopy of a few electron box
1993 StandoutNobel
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
A critical review of ohmic and rectifying contacts for silicon carbide
1995 StandoutNobel
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well
1991
Attosecond metrology: from electron capture to future signal processing
2014 StandoutNobel
The optical processes in AlInP/GaInP/AlInP quantum wells
1996
Band lineups and deformation potentials in the model-solid theory
1989 Standout
Definitive identification ofD−centers in GaAs quantum wells by tilt-induced line splitting in a magnetic field
1992
Photoreflectance study of narrow-well strained-layerInxGa1−xAs/GaAs coupled multiple-quantum-well structures
1988
Transition energies ofD−levels in quantum-well structures
1992
Spintronics: Fundamentals and applications
2004 Standout
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory
1986
Excitonic structure of bulk AlN from optical reflectivity and cathodoluminescence measurements
2005
Electronic structure of strained-layer quantum wells
1997
Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
1988
Virtual photoconductivity
1989
Analysis of band bending at III–V semiconductor interfaces by Raman spectroscopy
1993
Modulated photoabsorption in strainedGa1−xInxAs/GaAs multiple quantum wells
1991 StandoutNobel
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
1993
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing
2004 StandoutNobel
Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
2004
Determining the electric field in [111] strained-layer quantum wells
1993
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa1−xInxN/GaNquantum-well structures
2000 StandoutNobel
Miniband dispersion in GaAs/AlxGa1−xAs superlattices with wide wells and very thin barriers
1988
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor Heterojunctions
1985
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Electronic subbands for AlxGa1−xAs/GaAs multilayer and superlattice structures
1987
Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C
1988
Negative-donor centers in semiconductors and quantum wells
1990
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Electromodulation spectroscopy of confined systems
1989
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Well-width dependence ofD−cyclotron resonance in quantum wells
1993
Finite-element analysis of the miniband structures of semiconductor superlattices with arbitrary periodic potential profiles
1991 StandoutNobel
Occupancy of shallow donor impurities in quasi-two-dimensional systems:D0andD−states
1992
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Temperature dependence of photoreflectance line shapes in multiple quantum wells
1987
Single-electron capacitance spectroscopy of semiconductor microstructures
1993 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Optical properties of AlxGa1−x As
1986
Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
1997 StandoutNobel
Franz–Keldysh oscillations in modulation spectroscopy
1995
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
2013 StandoutNobel
Strong-field and attosecond physics in solids
2014 StandoutNobel
Photoreflectance and photoreflectance-excitation spectroscopy of a GaAs/Ga0.67Al0.33As multiple-quantum-well structure
1987
Quantum-confined Stark effect in strained GaInN quantum wells on sapphire (0 0 0 1)
1998 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Addendum: Optical-field-induced current in dielectrics
2014 StandoutNatureNobel
Colloquium: Strong-field phenomena in periodic systems
2018 StandoutNobel
Carrier relaxation and luminescence polarization in quantum wells
1990
D−centers probed by resonant tunneling spectroscopy
1996 StandoutNobel
Improved performance of $(20\bar{2}1)$ long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers
2014 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Electromodulation mechanisms for the uncoupled and coupled states of a GaAs/Ga0.82Al0.18As multiple-quantum-well structure
1988
Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures
2013 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
D−states in GaAs/AlxGa1−xAs superlattices in a magnetic field
1995
Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells
1989 Nobel
Monolithically integrated semiconductor fluorescence sensor for microfluidic applications
2004 StandoutNobel
Epitaxial growth and band bending ofn- andp-type Ge on GaAs(001)
1988
Photoluminescence from highly excited AlN epitaxial layers
2008 StandoutNobel
Far-infrared magneto-optical studies of D− ions and many-electron effects on donor impurities in quasi-2D semiconductor structures
1993
Variational studies ofD0andD−centers in magnetic fields in bulk crystals and in parabolic quantum wells
1994
Band parameters for nitrogen-containing semiconductors
2003 Standout
Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
1992
Photoreflectance, absorption, and nuclear resonance reaction studies of AlxGa1−x As grown by molecular-beam epitaxy
1988

Works of W. T. Beard being referenced

Air-bridges, air-ramps, planarization, and encapsulation using pyrolytic photoresist in the fabrication of three-dimensional microstructures
1997
Far-infrared magnetoabsorption study of weakly bound electrons inGaAs/AlxGa1−xAsmultiple quantum wells
1987
Raman scattering and photoluminescence studies of two-dimensional electron systems in Ge/GaAs heterostructures
1985
Temperature dependence of photoreflectance in GaAs-AlGaAs multiple quantum wells
1986
Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width
1986
Barrier impurity states in modulation doped AlGaAs/GaAs multi-quantum wells
1988
Light scattering study of electrons confined at Ge/GaAs interfaces
1982
Photoreflectance modulation mechanisms in GaAs-AlxGa1−xAs multiple quantum wells
1987
Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions
1985
Interband transitions in molecular-beam-epitaxial AlxGa1−xAs/GaAs
1985
Temperature and doping-concentration dependence of the oscillatory properties of the photoreflectance spectra from GaAs grown by molecular-beam epitaxy
1991
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