Citation Impact
Citing Papers
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
2010
Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
1994
Growth and applications of Group III-nitrides
1998
Pulsed microwave Fourier transform spectrometer
1976
Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots
2005 Standout
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N Source
1994
On the theory of the relaxation matrix and its application to microwave transient phenomena
1975 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Indium nitride (InN): A review on growth, characterization, and properties
2003
Polarization-engineered removal of buffer leakage for GaN transistors
2010
Theory of the relaxation matrix and its relation to microwave transient phenomena. II. Semiclassical calculations for systems of OCS and nonpolar collision partners
1975 StandoutNobel
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Energy transfer as a function of collision energy. IV. State-to-state cross sections for rotational-to-translational energy transfer in HF+Ne, Ar, and Kr
1982 StandoutNobel
Thermal stability of indium nitride single crystal films
1993
Progress and prospects of group-III nitride semiconductors
1996
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates
2003 StandoutNobel
RRKM reaction rate theory for transition states of any looseness
1984 StandoutNobel
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Optical dephasing of small and large molecules: coherent oscillations of emitting molecules
1977 StandoutNobel
The theory of pulsed Fourier transform microwave spectroscopy carried out in a Fabry–Perot cavity: Static gas
1981
Reliability of large periphery GaN-on-Si HFETs
2006
Cross-correlation trajectory study of V–V energy transfer in HF–HF and DF–DF
1980 StandoutNobel
Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
1999 StandoutNobel
High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
2010
Ground state relaxation measurements by laser-induced depopulation
1977 StandoutNobel
Transient experiments and relaxation processes involving rotational states
1976
Graphene-Like Two-Dimensional Materials
2013 Standout
Characteristics of impact ionization rates in direct and indirect gap semiconductors
1999
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Fabry–Perot cavity pulsed Fourier transform microwave spectrometer with a pulsed nozzle particle source
1981 Standout
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Natural bond orbital analysis of near-Hartree–Fock water dimer
1983 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
1994
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe
1989
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
1999 StandoutNobel
Polarization in elastic scattering: close-coupling studies on ArN2
1978
Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
1993
Unimolecular reaction rate theory for transition states of partial looseness. II. Implementation and analysis with applications to NO2 and C2H6 dissociations
1985 StandoutNobel
Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers
2012 StandoutNobel
Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals
1996
Semiclassical theory of the effects of collisions between rotors on molecular spectral line shapes. I
1977 StandoutNobel
Energy transfer as a function of collision energy. III. State-to-state cross sections for rotational-to-translational energy transfer in HF+Ar
1980 StandoutNobel
Microwave echoes in inhomogeneous stark fields
1976
Growth of gallium nitride by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy: The role of charged species
1994
Semiclassical theory of the effects of collisions between rotors on molecular spectral lineshapes. II. Calculations for several systems
1977 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Structural properties of InN films grown on sapphire substrates by microwave-excited metalorganic vapor-phase epitaxy
1994
The Halogen Bond
2016 Standout
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
1999 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Classical and quantum centrifugal decoupling approximations for HCl–Ar
1977 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Strains and rotations in thin deposited films
2010
Boron nitride thin films by microwave ECR plasma chemical vapor deposition
1993 StandoutNobel
Collisional broadening and spectral line shape of an entire rotational band
1978 StandoutNobel
Phonon structure of InN grown by atomic layer epitaxy
1999
Rotational energy transfer in hydrogen halide molecules at supersonic beam velocities
1979 StandoutNobel
Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
1992 StandoutNobel
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Radiationless relaxation and optical dephasing of molecules excited by wide- and narrow-band lasers. II. Pentacene in low-temperature mixed crystals
1979 StandoutNobel
Coherence transfer echoes
1978 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Supersonic jet epitaxy of III-nitride semiconductors
1997
Works of W. E. Hoke being referenced
Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates
2006
Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures
2005
Carbon doping of MBE GaAs and Ga0.7Al0.3As films using a graphite filament
1991
The measurement of T1 and T2 for the ammonia inversion doublets in the ground vibrational state
1975
Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
1991
A π, τ, π/2 type pulse sequence method for the determination of T1 in rotational transitions
1975
Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates
1984
Direct correlation between impact ionization and the kink effect in InAlAs/InGaAs HEMTs
1996
Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions
2007
Reliability of metamorphic HEMTs on GaAs substrates
2002
Metalorganic growth of epitaxial films of CdTe and HgCdTe on sapphire substrates
1985
AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2010
The rotational Zeeman effect in Trans-crotonaldehyde
1978
The measurement and interpretation of T1 and T2 in the inversion doublets of 15NH3 and the rotational transitions in OCS
1976
The molecular Zeeman effect in vinyl formate using a conventional Stark modulated spectrometer and a Fourier transform spectrometer
1978