Citation Impact
Citing Papers
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures
2001
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
2012
Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces
2004
Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates
2006
30-W/mm GaN HEMTs by Field Plate Optimization
2004 Standout
Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures
2005
High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
2004
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Semiconductor Junction Gas Sensors
2008
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
2003
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
Effects of AlGaN/GaN HEMT structure on RF reliability
2005
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Wet etching of GaN, AlN, and SiC: a review
2005
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
2005
Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication
2004
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
On the optical polarization properties of semipolar InGaN quantum wells
2011
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
2008
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
2012
Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells
2012
Superior Thermal Conductivity of Single-Layer Graphene
2008 Standout
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
2002
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
2003
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Screening dynamics of intrinsic electric field in AlGaN quantum wells
2008
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
2009
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy
2005
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
2002
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
2004
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2003
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
2011
Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
2008
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects
2008
Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets
2006
Thermal conductivity of GaN films: Effects of impurities and dislocations
2002
Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
2009
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor
2006
Thermal conduction in AlxGa1−xN alloys and thin films
2005
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures
2002
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
2007
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement
2005
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Works of V. Tilak being referenced
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers
2000
Undoped AlGaN/GaN HEMTs for microwave power amplification
2001
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
2003
An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2002
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
2001
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate
2001
Pt/GaN Schottky diodes for hydrogen gas sensors
2005
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
2000
Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys
1999