Citation Impact
Citing Papers
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
2009
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing
2010
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
2006
InGaN laser diodes with 50 mW output power emitting at 515 nm
2009
Advances in group III-nitride-based deep UV light-emitting diode technology
2010 Standout
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009
Microstructures of GaInN/GaInN Superlattices on GaN Substrates
2010 StandoutNobel
Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
2011 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
2007 StandoutNobel
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
Effects of YAG: Ce Phosphor Particle Size on Luminous Flux and Angular Color Uniformity of Phosphor-Converted White LEDs
2012 Standout
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
2012
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010 StandoutNobel
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
New light from hybrid inorganic–organic emitters
2008
Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells
2011 StandoutNobel
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
2013 StandoutNobel
Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
2006
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
2009
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode
2006
Dislocation effect on light emission efficiency in gallium nitride
2002
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures
2007
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
2008
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Optical excitations in electron microscopy
2010 Standout
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
2006
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes
1999
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
2001
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Improvement of green LED by growing p-GaN on In0.25GaN/GaN MQWs at low temperature
2005
Works of V. Merai being referenced
Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
2003
Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development
2003
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
Sapphire substrate misorientation effects on GaN nucleation layer properties
2004
Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study
2005
Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs
1998