Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
ZnO Nanowire Arrays for Enhanced Photocurrent in PbS Quantum Dot Solar Cells
2013 StandoutNobel
Observation ofPT-Symmetry Breaking in Complex Optical Potentials
2009 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Amido compounds of gallium and indium
2001
Influence of the domain size on the band gap of ordered (GaIn)P
1999
A review of Ga2O3 materials, processing, and devices
2018 Standout
Film/Substrate Orientation Relationship in theAIN/6H-SiC Epitaxial System
1996 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Electrical properties of p-type GaN:Mg codoped with oxygen
2001
A comprehensive review of ZnO materials and devices
2005 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Metal Catalysts for Heterogeneous Catalysis: From Single Atoms to Nanoclusters and Nanoparticles
2018 Standout
Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy
2002
AsH3 to Ga(CH3)3 Mole Ratio Dependence of Dominant Deep Levels in MOCVD GaAs
1983
The anomalous bandgap bowing in GaAsN
2002
Emerging S‐Scheme Photocatalyst
2021 Standout
Lattice thermal conductivity of group-IV and III–V semiconductor alloys
2007
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Particulate Photocatalysts for Light-Driven Water Splitting: Mechanisms, Challenges, and Design Strategies
2019 Standout
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model
1996
Understanding TiO2Photocatalysis: Mechanisms and Materials
2014 Standout
Distributions of phonon lifetimes in Brillouin zones
2015 Standout
Atomic layer epitaxy of III-V binary compounds
1985
Modeling of the free-electron recombination band in emission spectra of highly conductingn−GaN
2001
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Organometal halide perovskite solar cells: degradation and stability
2015 Standout
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Theory of electronic structure evolution in GaAsN and GaPN alloys
2001
WIEN2k: An APW+lo program for calculating the properties of solids
2020 Standout
Experimental studies of the conduction-band structure of GaInNAs alloys
2002
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Enhancing nitrogen solubility in GaAs and InAs by surface kinetics: Anab initiostudy
2009
Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems
1996
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs
2012
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Strain relaxation of GaN nucleation layers during rapid thermal annealing
2001
First-principles calculations of ELNES and XANES of selected wide-gap materials: Dependence on crystal structure and orientation
2004
Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys
1996
Morphology of organometallic CVD grown GaAs epitaxial layers
1983
Identification of a defect in a semiconductor:EL2 in GaAs
1986 Standout
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO
2005
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
2002
Generalized ellipsometry and complex optical systems
1998
π-Bonding and the Lone Pair Effect in Multiple Bonds Involving Heavier Main Group Elements: Developments in the New Millennium
2010 Standout
Empirical tight-binding model for the electronic structure of dilute GaNAs alloys
2003
Visible-light driven heterojunction photocatalysts for water splitting – a critical review
2015 Standout
Novel aspects of the growth of nitrides by MOVPE
2001 StandoutNobel
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAlN∕GaNsuperlattices
2005 StandoutNobel
One-dimensional ZnO nanostructures: Solution growth and functional properties
2011
Ab initiothermal transport in compound semiconductors
2013
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Effect of nitrogen and temperature on the electronic band structure of GaAs1−xNx alloys
2002
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials
2016 StandoutNobel
Toward the Development of Printable Nanowire Electronics and Sensors
2009
Materials and Mechanics for Stretchable Electronics
2010 StandoutScience
Moving photoluminescence bands in GaAs1−xSbx layers grown by molecular beam epitaxy on InP substrates
1994
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Infrared dielectric functions and phonon modes of high-quality ZnO films
2002
Modeling the optical constants of solids using genetic algorithms with parameter space size adjustment
1997
25th Anniversary Article: The Evolution of Electronic Skin (E‐Skin): A Brief History, Design Considerations, and Recent Progress
2013 Standout

Works of V. Gottschalch being referenced

Growth of β‐Ga2O3 on Al2O3 and GaAs using metal‐organic vapor‐phase epitaxy
2009
Photoluminescence of heavily doped n-InP
1986
VLS growth of GaN nanowires on various substrates
2008
Nitrogen dependence of the GaAsN interband critical points E1 and E1+Δ1 determined by spectroscopic ellipsometry
2000
Isotropic dielectric functions of highly disordered AlxGa1−xInP (0⩽x⩽1) lattice matched to GaAs
1999
Evolution of the optical properties of III-V nitride alloys: Direct band-to-band transitions inGaNyP1−y(0<~y<~0.029)
2002
Synthesis, X‐ray structure and application of bis[allylamine(dimethyl)gallium(III)] as a precursor for the growth of GaP layers by MOVPE
1994
Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers
2004
Phonon Modes of InxGa1-xAs1-yNy Measured by Far Infrared Spectroscopic Ellipsometry
2001
Pseudomorphic Growth and Nucleation of Misfit Dislocations in the Epitaxial System (001) InP/In1−xGraxAs. I. Pseudomorphic Growth, Tetragonal Distortion, and Lattice Relaxation by Dislocation Nucleation
1989
Thermal Resistivity of GaInAsP Alloy. Experimental Results
1986
MOVPE growth of BxGa1−xAs, BxGa1−x−yInyAs, and BxAl1−xAs alloys on (001) GaAs
2002
Epitaxial Deposition of GaAs in the Ga (CH3)3AsH3H2‐System (IV) Thermodynamic and Kinetic Considerations
1974
Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2studied by dark-field spectroscopy
1996
Near-band-gap optical functions spectra and band-gap energies of GaNAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
2000
Band-gap reduction and valence band splitting in spontaneously ordered GaInP2 studied by dark-field spectroscopy
1995
Nitrogen substitutions in GaAs(001) surfaces: Density‐functional supercell calculations of the surface stability
2005
Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry
2000
Phonon modes of GaNyP1−y (0.006⩽y⩽0.0285) measured by midinfrared spectroscopic ellipsometry
2001
Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry
2001
Optical constants of GaxIn1−xP lattice matched to GaAs
1995
Infrared dielectric function and phonon modes of highly disordered(AlxGa1−x)0.52In0.48P
2001
Lateral homogeneity of Schottky contacts on n-type ZnO
2003
Rankless by CCL
2026