V. Drouot

2D transition metal dichalcogenides

Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Quantum Spin Hall Effect in Silicene and Two-Dimensional Germanium

Quantum Spin Hall Effect in Inverted Type-II Semiconductors

Evidence for Helical Edge Modes in InvertedInAs/GaSbQuantum Wells

Slow Gold Adatom Diffusion on Graphene: Effect of Silicon Dioxide and Hexagonal Boron Nitride Substrates

Finite conductivity in mesoscopic Hall bars of inverted InAs/GaSb quantum wells

Topological insulators and superconductors

Spintronics: Fundamentals and applications

Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells

Quantum theory of phonon-assisted exciton formation and luminescence in semiconductor quantum wells

Classification of topological quantum matter with symmetries

Role of misfit strain and proximity in epigrowth modes I. Strong epilayer-substrate interaction

Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers

Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors

Observation of the Spin Hall Effect in Semiconductors

Critical behavior of a point contact in a quantum spin Hall insulator

Enhancement of Exciton–Phonon Scattering from Monolayer to Bilayer WS₂

Lateral modulations in zero-net-strained GaInAsP multilayers grown by gas source molecular-beam epitaxy

Epitaxial growth and magnetic exchange anisotropy in Fe3O4/NiO bilayers grown on MgO(001) and Al2O3(0001)

Epitaxial growth of NiO layers on MgO(0 0 1) and MgO(1 1 0)

Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Colloquium: Topological insulators

Effect of surface steps and nonstoichiometry on critical thickness of strained InGaAs layers grown by molecular beam epitaxy on InAlAs/InP heterostructures

Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)

Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (001) and (113)B InP at low lattice mismatch

Critical thicknesses of highly strained InGaAs layers grown on InP by molecular beam epitaxy

Resistance resonance induced by electron-hole hybridization in a strongly coupled InAs/GaSb/AlSb heterostructure

Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate

Resonant Rayleigh scattering by excitonic states laterally confined in the interface roughnessof GaAs/AlxGa1−xAs single quantum wells