Standout Papers

A fast, high-endurance and scalable non-volatile memory device made fro... 2006 2026 2012 2019 1.7k
  1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures (2011)
    Myoung‐Jae Lee, Chang Bum Lee et al. Nature Materials
  2. Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array (2014)
    Chwee‐Lin Choong, Mun‐Bo Shim et al. Advanced Materials
  3. Electrical observations of filamentary conductions for the resistive memory switching in NiO films (2006)
    Sunae Seo, Seung‐Eon Ahn et al. Applied Physics Letters

Immediate Impact

2 by Nobel laureates 7 from Science/Nature 256 standout
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Citing Papers

Materials-Driven Soft Wearable Bioelectronics for Connected Healthcare
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105 intermediate papers

Works of U‐In Chung being referenced

Electrical observations of filamentary conductions for the resistive memory switching in NiO films
2006 Standout
Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications
2006
and 7 more

Author Peers

Author Last Decade Papers Cites
U‐In Chung 5573 2267 650 2108 103 7.2k
Tailiang Guo 5282 2483 556 1897 325 7.0k
Kinam Kim 6949 5468 1024 1825 129 10.6k
Hong Wang 5541 2313 1380 2336 299 9.1k
Chaoxing Wu 2695 1358 665 1721 178 4.4k
Tae Whan Kim 4228 2587 829 2189 261 6.6k
Reinhard Schwödiauer 3898 1843 428 2909 73 7.5k
Xinge Yu 4278 2095 638 2735 195 8.1k
Run‐Wei Li 5838 3681 2824 2705 293 11.4k
Xiaobing Yan 5558 2105 457 1416 188 6.8k
K. Szot 8124 5046 1232 2244 129 10.1k

All Works

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