U. Smith

Alternative Plasmonic Materials: Beyond Gold and Silver

Topological properties and dynamics of magnetic skyrmions

Microneedles for drug and vaccine delivery

Development of AlN/diamond heterojunction field effect transistors

Demonstration of diamond field effect transistors by AlN/diamond heterostructure

Epitaxial growth and orientation of AlN thin films on Si(001) substrates deposited by reactive magnetron sputtering

Solid-State Dewetting of Thin Films

Interconnect fabrication processes and the development of low-cost wiring for CMOS products

In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors

Synthesis and applications of metal silicidenanowires

Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy

Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy

3-D ICs: a novel chip design for improving deep-submicrometer interconnect performance and systems-on-chip integration

Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy

A review of focused ion beam milling techniques for TEM specimen preparation

Geometrical effects in mechanical characterizing of microneedle for biomedical applications

Silicides and ohmic contacts

Morphological Control for High Performance, Solution‐Processed Planar Heterojunction Perovskite Solar Cells

High Performance Silicon Nanowire Field Effect Transistors

Cross-Sectional Tem Sample Preparation Method Using Fib Etching for Thin-Film Transistor

A transmission electron microscopy study of hillocks in thin aluminum films

An experimental study of the influence of oxygen on silicide formation with tungsten deposited from tungsten hexafluoride

Local stress relaxation phenomena in thin aluminum films

Hole formation in thin aluminium films under controlled variation of strain and temperature

Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition

Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi