Standout Papers
Citation Impact
Citing Papers
Review on Zinc Oxide Nanoparticles: Antibacterial Activity and Toxicity Mechanism
2015 Standout
High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy
2011 StandoutNobel
Recent developments of zinc oxide based photocatalyst in water treatment technology: A review
2015 Standout
The roles of photo-carrier doping and driving wavelength in high harmonic generation from a semiconductor
2017 StandoutNobel
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Why nitrogen cannot lead to p-type conductivity in ZnO
2009
Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates
2006
First-principles calculations for point defects in solids
2014 Standout
Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures
2005
A review of Ga2O3 materials, processing, and devices
2018 Standout
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
2008 StandoutNobel
Control of growth mode in Mg-doped GaN/AlN heterostructure
2014 StandoutNobel
Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures
2009 StandoutNobel
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
200 nm deep ultraviolet photodetectors based on AlN
2006
Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes
2012 StandoutNobel
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Highly efficient broad‐area blue and white light‐emitting diodes on bulk GaN substrates
2008 StandoutNobel
Technique to evaluate the diode ideality factor of light-emitting diodes
2010 StandoutNobel
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
2006
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
ZnO Devices and Applications: A Review of Current Status and Future Prospects
2010
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
Stacking Faults and Luminescence Property of InGaN Nanowires
2013 StandoutNobel
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN
2011 Nobel
Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
2005
Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
2008 StandoutNobel
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Lab-on-Skin: A Review of Flexible and Stretchable Electronics for Wearable Health Monitoring
2017 Standout
GaN blue photonic crystal membrane nanocavities
2005 StandoutNobel
Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting
2011 StandoutNobel
Recent progress in nonpolar LEDs as polarized light emitters
2008 StandoutNobel
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers
2009
High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
2011
Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
2008 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates
2013 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations
2009 StandoutNobel
Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization
2008 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Mg‐doped high‐quality AlxGa1–xN (x=0‐1) grown by high‐temperature metal‐organic vapor phase epitaxy
2007 StandoutNobel
Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths
2010 StandoutNobel
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Luminescence properties of highly Si-doped AlN
2006
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells
2006
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Correlation between optical and electrical properties of Mg-doped AlN epilayers
2006
Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN
2011
Effect of high-k dielectric and ionic liquid gate on nanolayer black-phosphorus field effect transistors
2015
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
Development of Nonpolar and Semipolar InGaN/GaN Visible Light-Emitting Diodes
2009 StandoutNobel
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Growth, morphology, and structural properties of group‐III‐nitride nanocolumns and nanodisks
2007
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
2010
Works of Tommy Ive being referenced
Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride
2014
Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0001)
2005
Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
2004
Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
2005
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements
2009
Causes of incorrect carrier-type identification in van der Pauw–Hall measurements
2008
Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates
2008
Step-flow growth of ZnO(0001) on GaN(0001) by metalorganic chemical vapor epitaxy
2008
(Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on6 H -SiC ( 0001 )
2008
Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001)
2004