Citation Impact
Citing Papers
Printable organometallic perovskite enables large-area, low-dose X-ray imaging
2017 StandoutNature
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Native point defects in ZnO
2007 Standout
Development of AlN/diamond heterojunction field effect transistors
2012 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Cs2AgBiBr6 single-crystal X-ray detectors with a low detection limit
2017 Standout
Microstructures of GaInN/GaInN Superlattices on GaN Substrates
2010 StandoutNobel
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Bulk transport measurements in ZnO: The effect of surface electron layers
2010
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Demonstration of diamond field effect transistors by AlN/diamond heterostructure
2011 StandoutNobel
In situ X-ray Reflectivity Measurements on Annealed InxGa1-xN Epilayer Grown by Metalorganic Vapor Phase Epitaxy
2013
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Local vibrational modes of impurities in semiconductors
2000
Monolithic integration of hybrid perovskite single crystals with heterogenous substrate for highly sensitive X-ray imaging
2017
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Franz–Keldysh oscillations in modulation spectroscopy
1995
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Gallium Indium Nitride-Based Green Lasers
2011
Half-metallic ferromagnets: From band structure to many-body effects
2008 Standout
Determination of acoustic wave velocities and elastic properties for diamond and other hard materials
2004
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
Evolution process of cross-hatch patterns and reduction of surface roughness in (InAs)m(GaAs)n strained short-period superlattices and InGaAs alloy layers grown on GaAs
1999
Transport properties of Mn δ-doped GaAs and the effect of selective doping
2002
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
Theory of Li in ZnO: A limitation for Li-basedp
2005
High-efficiency quantum-dot light-emitting devices with enhanced charge injection
2013 StandoutNobel
Hydrogen-related defects in crystalline semiconductors: a theorist's perspective
1995
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
1993
Bias-enhanced lateral photoelectrochemical etching of GaN for the fabrication of undercut micromachined system structures
2006
Strains and rotations in thin deposited films
2010
Lattice contraction and electrical conduction of heavily carbon doped AlAs layers grown by atomic layer epitaxy
2000
When group-III nitrides go infrared: New properties and perspectives
2009
Lithium-ion batteries: outlook on present, future, and hybridized technologies
2019 Standout
Band bending at the surfaces of In-rich InGaN alloys
2008
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
Open-Circuit Voltage Deficit, Radiative Sub-Bandgap States, and Prospects in Quantum Dot Solar Cells
2015 StandoutNobel
Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
2009
Structure and stability ofO − H
2005
Nanodiamond Size from Low-Frequency Acoustic Raman Modes
2022 StandoutNobel
X-ray diffraction of III-nitrides
2009
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Heterojunction band offset engineering
1996
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Growth of GaInN by Raised-Pressure Metalorganic Vapor Phase Epitaxy
2010 StandoutNobel
Works of T.B. Joyce being referenced
Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices
1999
High resolution transmission electron microscopy study of a GaAs/Si heterostructure grown by chemical beam epitaxy
1992
Local vibrational modes in GaAs under hydrostatic pressure
1997
Dynamics of the H-C As
1995
Raman spectroscopic study of the H-CAscomplex in epitaxial AlAs
1995
Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering
2000
A study of surface cross-hatch and misfit dislocation structure in grown by chemical beam epitaxy
1995
The structure and vibrational modes of H-CAspairs in passivated AlAs grown by chemical beam epitaxy
1994
Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
2006
Transition from electron accumulation to depletion at InGaN surfaces
2006
A calibration of the H-CASstretch mode in GaAs
1996
Fabrication of GaN cantilevers on silicon substrates for microelectromechanical devices
2004
Photoreflectance characterization of OMVPE GaAs on Si
1988
Dynamics of the H-C As
1993
Di-Carbon Defects in Annealed Highly Carbon Doped GaAs
1997