Citation Impact
Citing Papers
Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact
2007 StandoutNobel
Reaction of molecular beam epitaxial grown AlN nucleation layers with SiC substrates
2006
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
30-W/mm GaN HEMTs by Field Plate Optimization
2004 Standout
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Power Semiconductor Devices for Smart Grid and Renewable Energy Systems
2017
Rapid silicon outdiffusion from SiC substrates during molecular-beam epitaxial growth of AlGaN∕GaN∕AlN transistor structures
2005
High-Power Polarization-Engineered GaN/AlGaN/GaN HEMTs Without Surface Passivation
2004
A review of Ga2O3 materials, processing, and devices
2018 Standout
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3
2017
Improvement of DC and RF Characteristics of AlGaN/GaN High Electron Mobility Transistors by Thermally Annealed Ni/Pt/Au Schottky Gate
2004
High performance AlGaN/GaN power switch with HfO2 insulation
2009
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
2003
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Fabrication of enhancement‐mode AlxGa1–xN/GaN junction heterostructure field‐effect transistors with p‐type GaN gate contact
2007 StandoutNobel
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
2004
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
2005
Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication
2004
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Stable CW operation of field-plated GaN-AlGaN MOSHFETs at 19 W/mm
2005
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
2017
AlN/diamond heterojunction diodes
2003
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
2002
GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
2009 StandoutNobel
Superior Thermal Conductivity of Single-Layer Graphene
2008 Standout
p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)
2002
Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
2003
Heteroepitaxial growth of ε-Ga2O3 thin films on cubic (111) MgO and (111) yttria-stablized zirconia substrates by mist chemical vapor deposition
2016
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth
2016
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Power Performance of AlGaN–GaN HEMTs Grown on SiC by Plasma-Assisted MBE
2004
Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures
2003
Enhancement of two‐dimensional electron gases in AlGaN‐channel high‐electron‐mobility transistors with AlN barrier layers
2012 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
2009 StandoutNobel
Thermal conductivity of GaN films: Effects of impurities and dislocations
2002
Suppression of current collapse by hole injection from drain in a normally-off GaN-based hybrid-drain-embedded gate injection transistor
2015
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
2007
Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
2015
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Trench formation and corner rounding in vertical GaN power devices
2017
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Thermal conduction in AlxGa1−xN alloys and thin films
2005
Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits
2008 Standout
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Vertical GaN Junction Barrier Schottky Diodes
2016
Thermal resistance calculation of AlGaN-GaN devices
2004
High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy
2002 Nobel
Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy
2010 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Radiation effects in GaN materials and devices
2012
AlGaN/GaN Heterostructure Field-Effect Transistors on Fe-Doped GaN Substrates with High Breakdown Voltage
2011 StandoutNobel
AlN/Diamond np-junctions
2003
High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact
2006 StandoutNobel
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2012 Standout
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Works of T. Prunty being referenced
Undoped AlGaN/GaN HEMTs for microwave power amplification
2001
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation
2003
Growth and passivation of AlGaN/GaN heterostructures
2003
An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
2002
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs
2001
4-kV and 2.8-$\text{m}\Omega $ -cm2 Vertical GaN p-n Diodes With Low Leakage Currents
2015
Performance of the AlGaN HEMT Structure With a Gate Extension
2004
3.7 kV Vertical GaN PN Diodes
2014
1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
2014
Vertical Power p-n Diodes Based on Bulk GaN
2014