Citation Impact
Citing Papers
The Thyroid Nodule
2004 Standout
Detection of individual gas molecules adsorbed on graphene
2007 StandoutNobel
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2018 StandoutNature
Risk of Malignancy in Nonpalpable Thyroid Nodules: Predictive Value of Ultrasound and Color-Doppler Features
2002 Standout
Complex thermoelectric materials
2008 Standout
Density of States and Zero Landau Level Probed through Capacitance of Graphene
2010 StandoutNobel
Elastic Scattering Time of Matter Waves in Disordered Potentials
2019 StandoutNobel
Optical-field-induced current in dielectrics
2012 StandoutNatureNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Two-dimensional materials and their prospects in transistor electronics
2015
An Observation Trial Without Surgical Treatment in Patients with Papillary Microcarcinoma of the Thyroid
2003 Standout
Dependence of electron mobility in modulation-doped GaAs-(AlGa)As heterojunction interfaces on electron density and Al concentration
1981 StandoutNobel
Properties of the apparent metal-insulator transition in two-dimensional systems
1998 StandoutNobel
III-V nitrides for electronic and optoelectronic applications
1991 StandoutNobel
Experimental evidence for finite-width edge channels in integer and fractional quantum Hall effects
1993 StandoutNobel
Gate-controlled transport in narrow GaAs/Al x Ga 1 − x
1986 StandoutNobel
New Approaches to Nanofabrication: Molding, Printing, and Other Techniques
2005 Standout
Breakdown of universal scaling of conductance fluctuations in high magnetic fields
1992 StandoutNobel
GaAs structures with electron mobility of 5×106 cm2/V s
1987 StandoutNobel
Energy Structure and Quantized Hall Effect of Two-Dimensional Holes
1983 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
1981
Transport properties of GaAs-AlxGa1−x As heterojunction field-effect transistors
1981 StandoutNobel
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Microwave cavity searches for dark-matter axions
2003 StandoutNobel
Resonant tunneling in magnetic field: Evidence for space-charge buildup
1987 StandoutNobel
Experimental study ofσ x x
1994 StandoutNobel
GaAs field-effect transistor with an atomically precise ultrashort gate
1991 StandoutNobel
Emerging Two-Dimensional Nanomaterials for Electrocatalysis
2018 Standout
Direct-indirect band gap crossover in two-dimensional GaSb/AlSb-quantum-well-structures
1987 StandoutNobel
Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility
1982
Exchange coupling in magnetic heterostructures
1993
Observation of a Bloch-Grüneisen regime in two-dimensional electron transport
1990 StandoutNobel
Cyclotron resonance of high-mobility two-dimensional electrons at extremely low densities
1988 StandoutNobel
Risk of Malignancy in Nonpalpable Thyroid Nodules: Predictive Value of Ultrasound and Color-Doppler Features
2002
Scaling in spin-degenerate Landau levels in the integer quantum Hall effect
1993 StandoutNobel
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
Status of the GaAs metal—oxide—semiconductor technology
1980
Spectroscopic determination of the band discontinuity in GaSb/AlSb multiple-quantum-well structures
1988 StandoutNobel
Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
1993 StandoutNobel
Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctions
1992
RF transistors: Recent developments and roadmap toward terahertz applications
2007
Cryogenic, low-noise, balanced amplifiers for the 300–1200 MHz band using heterostructure field-effect transistors
1999
On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
1983
Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
1983
High Electron Mobility Transistor Logic
1981
Noncollinear and collinear magnetic structures in exchange coupled Fe/Cr(001) superlattices
1995 StandoutNobel
Single-interface enhanced mobility structures by metalorganic chemical vapour deposition
1981
Evidence for the Fractional Quantum Hall State atν = 1 7
1988 StandoutNobel
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedG a N / A l 0.28 Ga 0.72 N
1998 StandoutNobel
High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
1991
Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling
1989 StandoutNobel
Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron Systems
1985 StandoutNobel
Temperature dependence of the quantized Hall effect
1985 StandoutNobel
Deep level defects in n-type GaN
1994 StandoutNobel
Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensions
1983 StandoutNobel
Electron Spin Resonance onG a A s − Al x Ga 1 − x As
1983 StandoutNobel
Fractional quantum Hall effect at low temperatures
1983 StandoutNobel
2D‐Crystal‐Based Functional Inks
2016
Superconducting quantum interference device as a near-quantum-limited amplifier at 0.5 GHz
2001 StandoutNobel
Thermal properties of AlAs/GaAs superlattices
1987
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Temperature dependence of electron mobility inG a A s − Al x Ga 1 − x As
1984 StandoutNobel
The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors
1982
Radiation effects on modulation-doped GaAs-AlxGa1−xAs heterostructures
1983 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
1981
Works of T. Mimura being referenced
Papillary microcarcinoma of the thyroid
1998
MP-A4 GaAs MOSFET for low-power high-speed logic applications
1979
High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface
1980
WA-B5 high-electron mobility transistors with selectively doped GaAs/n-AlGaAs heterojunctions
1980
Short-channel effects in subquarter-micrometer-gate HEMTs: simulation and experiment
1989
The early history of the high electron mobility transistor (HEMT)
2002
Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz
2002
Magnetoresistance and galvanomagnetics in bias sputtered Co/Cu multilayers
1992
Low-temperature plasma oxidation of GaAs
1978
Electrical characteristics of the plasma-grown native-oxide/GaAs interface
1979
New structure of enhancement-mode GaAs microwave m.o.s.f.e.t.
1978
GaAs microwave MOSFET's
1978
High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices
1982