T. Hackbarth

Epitaxial core–shell and core–multishell nanowire heterostructures

Electrodeposition of Ge, Si and SixGe1−x from an air- and water-stable ionic liquid

Nanometre-scale electronics with III–V compound semiconductors

Ionic-liquid materials for the electrochemical challenges of the future

The ReaxFF reactive force-field: development, applications and future directions

Designing nanostructured Si anodes for high energy lithium ion batteries

Structure and Nanostructure in Ionic Liquids

SiGe Technology: Heteroepitaxy and High-Speed Microelectronics

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Analysis of enhanced light emission from highly strained germanium microbridges

Improving Estimation of Vehicle's Trajectory Using the Latest Global Positioning System With Kalman Filtering

Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization

Anisotropic Lithium Insertion Behavior in Silicon Nanowires: Binding Energy, Diffusion Barrier, and Strain Effect

Deep Learning-Powered Vessel Trajectory Prediction for Improving Smart Traffic Services in Maritime Internet of Things

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

Excess carrier lifetimes in Ge layers on Si

Lasing in direct-bandgap GeSn alloy grown on Si

III–V compound semiconductor transistors—from planar to nanowire structures

Results of a Precrash Application Based on Laser Scanner and Short-Range Radars

Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices

High f _max n -type Si/SiGeMODFETs

High performance 0.25 µm p -type Ge/SiGeMODFETs

Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors

Strain relaxation mechanism for hydrogen-implanted Si1−xGex/Si(100) heterostructures