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Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch
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Slow decay dynamics of visible luminescence in porous silicon: Hopping of carriers confined on a shell region in nanometer-size Si crystallites
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Luminescence decay in disordered low-dimensional semiconductors
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Metal-insulator transition atB = 0 inp -type SiGe
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Works of T. E. Whall being referenced
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2001
Evidence for quantum confinement in the photoluminescence of porous Si and SiGe
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SiGe heterostructures for FET applications
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The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE)
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Very high two-dimensional hole gas mobilities in strained silicon germanium
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Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05≤x≤0.3
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Hole effective mass in silicon inversion layers with different substrate orientations and channel directions
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The elimination of surface cross-hatch from relaxed, limited-area Si1−xGex buffer layers
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p-channel SiGe heterostructures for field effect applications
1996
Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor
2002