Citation Impact

Citing Papers

Dynamic emission Stokes shift and liquid-like dielectric solvation of band edge carriers in lead-halide perovskites
2019 StandoutNobel
Highly active oxide photocathode for photoelectrochemical water reduction
2011 Standout
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
2012 Standout
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
2004
High dielectric constant oxides
2004 Standout
Mathematical description of atomic layer deposition and its application to the nucleation and growth of HfO2 gate dielectric layers
2003
Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2009
Atomic layer deposition of hafnium oxide on germanium substrates
2005
Analysis of hydroxyl group controlled atomic layer deposition of hafnium dioxide from hafnium tetrachloride and water
2004
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
2004
Properties of HfO[sub 2] Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water
2004
Trapping, self-trapping and the polaron family
2007
Atomic Layer Deposition: An Overview
2009 Standout
Effects of precursors on nucleation in atomic layer deposition of HfO2
2004
Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
2009
Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor
2003
Random Deposition as a Growth Mode in Atomic Layer Deposition
2004
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model
2003
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Atomic layer deposition and characterization of hafnium oxide grown on silicon from tetrakis(diethylamino)hafnium and water vapor
2004
Nucleation and growth during the atomic layer deposition of W on Al2O3 and Al2O3 on W
2004
Stabilizing Nanostructured Solid Oxide Fuel Cell Cathode with Atomic Layer Deposition
2013 StandoutNobel
Nucleation period, surface roughness, and oscillations in mass gain per cycle during W atomic layer deposition on Al2O3
2009
Investigation of Self-Assembled Monolayer Resists for Hafnium Dioxide Atomic Layer Deposition
2005
Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon
2003
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
2003
Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
2004
Initial growth mechanism of atomic layer deposited TiN
2004
Electrical properties of HfO2 deposited via atomic layer deposition using Hf(NO3)4 and H2O
2003
Island growth as a growth mode in atomic layer deposition: A phenomenological model
2004
Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films
2005
Simulation of growth dynamics in atomic layer deposition. Part I. Amorphous films
2007
Growth and characterization of atomic layer deposited WC0.7N0.3 on polymer films
2003
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout

Works of T. Conard being referenced

Physical characterization of mixed HfAlO layers by complementary analysis techniques
2004
Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers
2002
Rankless by CCL
2026