Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Multiferroics: progress and prospects in thin films
2007 Standout
Three-dimensional imaging of individual point defects using selective detection angles in annular dark field scanning transmission electron microscopy
2016
Transformation of spin information into large electrical signals using carbon nanotubes
2007 StandoutNatureNobel
Spintronics: A Challenge for Materials Science and Solid‐State Chemistry
2007 Standout
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
2018 StandoutNature
Polymer–Fullerene Bulk‐Heterojunction Solar Cells
2010 Standout
Molecular spintronics
2011 Standout
Observation of the spin Seebeck effect
2008 StandoutNature
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Transient terahertz photoconductivity measurements of minority-carrier lifetime in tin sulfide thin films: Advanced metrology for an early stage photovoltaic material
2016
Electrically Controlling and Monitoring InP Nanowire Growth from Solution
2009 StandoutNobel
Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes
2016
Spin filtering through ferrimagnetic NiFe2O4 tunnel barriers
2006 StandoutNobel
Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors
2017
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Review—Ionizing Radiation Damage Effects on GaN Devices
2015
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Full oxide heterostructure combining a high-T C
2006 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Dye-Sensitized Solar Cells
2010 Standout
Spintronics: Fundamentals and applications
2004 Standout
Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 photodetectors
2016
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors
2017
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
Temperature-Dependent Characteristics of Ni/Au and Pt/Au Schottky Diodes on β-Ga2O3
2017
Communication—Electrical Characterization of β-Ga2O3Single Crystal Substrates
2017
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
2008 StandoutNobel
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)
2017 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)
2008
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN
2011 Nobel
Time-resolved luminescence studies of proton-implanted GaN
2009
Group‐III Sesquioxides: Growth, Physical Properties and Devices
2017
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Controllable Crystallization of CH3NH3Sn0.25Pb0.75I3 Perovskites for Hysteresis‐Free Solar Cells with Efficiency Reaching 15.2%
2017
Surface Science Studies of the Photoactivation of TiO2New Photochemical Processes
2006 Standout
Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
2015 StandoutScience
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Dislocation-related deep levels in carbon rich p-type polycrystalline silicon
2007
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Deep-level optical spectroscopy investigation of N-doped TiO2 films
2005
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
2017
Optical Signature of the Electron Injection in Ga2O3
2016
Carbon impurities and the yellow luminescence in GaN
2010
GaN: Processing, defects, and devices
1999
Tunnel junctions with multiferroic barriers
2007 StandoutNobel
A-Site Cation in Inorganic A3Sb2I9 Perovskite Influences Structural Dimensionality, Exciton Binding Energy, and Solar Cell Performance
2018 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
2009
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Shallow acceptors in GaN
2007
High-Efficiency Perovskite Solar Cells
2020 Standout
Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
2017
Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
2009
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Inductively coupled plasma etching of bulk, single-crystal Ga2O3
2017
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Electrical behavior of β-Ga2O3 Schottky diodes with different Schottky metals
2017 Nobel
Solar cell efficiency tables (version 54)
2019 Standout
Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$β-Ga2O3Schottky diodes
2016
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications
2007 Standout
Ballistic electron microscopy and spectroscopy of metal and semiconductor nanostructures
2009
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Radiation Effects in GaN-Based High Electron Mobility Transistors
2015
Electromagnetically induced transparency: Optics in coherent media
2005 Standout
Electrical characterization of band gap states in C-doped TiO2 films
2005
Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
2012
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Solar cell efficiency tables (Version 55)
2019
Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening
2017 StandoutNobel
Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy
2017
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Simulation of Radiation Effects in AlGaN/GaN HEMTs
2015
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of Steven A. Ringel being referenced
Direct Measurement of Quantum Confinement Effects at Metal to Quantum-Well Nanocontacts
2005
Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy
2006
Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates
2004
Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar InxGa1−xN
2011
Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures
2016
Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy
2016
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
2005
Impact of proton irradiation on deep level states in n-GaN
2013
Defects in GaN based transistors
2014
Electron trapping kinetics at dislocations in relaxed Ge0.3Si0.7/Si heterostructures
1995
Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
2015
Hydrogen passivation of dislocations in InP on GaAs heterostructures
1994
High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates
1998
Hydrogen passivation of deep levels in n–GaN
2000
Single‐junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
2002
Evidence for a dominant midgap trap in n-ZnSe grown by molecular beam epitaxy
1999
Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN
2001
Influence of metal choice on (010) β-Ga2O3 Schottky diode properties
2017
Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films
2008
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
2004
GaAs0.75P0.25/Si Dual-Junction Solar Cells Grown by MBE and MOCVD
2015
Investigations of High-Performance GaAs Solar Cells Grown on Ge–Si<tex>$_1-xhbox Ge_ x$</tex>–Si Substrates
2005
Compositional modulation and optical emission in AlGaN epitaxial films
2006
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
2000
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
2013
Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts
2005