Citation Impact

Citing Papers

Electron-electron interactions in the surface inversion layer of a semiconductor
1975 StandoutNobel
Tunnel field-effect transistors as energy-efficient electronic switches
2011 StandoutNature
Nanoferroelectrics: statics and dynamics
2006
Memristive devices for computing
2012 Standout
Nanoionics-based resistive switching memories
2007 Standout
The missing memristor found
2008 StandoutNature
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
2009 Standout
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
1975 StandoutNobel
Observation of Higher Sub-band inn-Type (100) Si Inversion Layers
1975 StandoutNobel
On the Electronic g‐Faetor in n‐Type Silicon Inversion Layers
1980 StandoutNobel
A RESONANT-GATE SILICON SURFACE TRANSISTOR WITH HIGH-Q BAND-PASS PROPERTIES
1965
Inversion layer carrier mobility in metal–oxide–semiconductor devices
1980
Time dependence of interface trap formation in MOSFETs following pulsed irradiation
1988
Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors
1974 StandoutNobel
An overview of radiation-induced interface traps in MOS structures
1989
Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas
1968
Evidence for a collective ground state in Si inversion layers in the extreme quantum limit
1980 StandoutNobel
Correcting interface-state errors in MOS doping profile determinations
1973
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
1965
The invention and early history of the CCD
2009 StandoutNobel
A model of interface states and charges at the Si-SiO2 interface: Its predictions and comparison with experiments
1981
A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures
1980
Voltage-Tunable Far-Infrared Emission from Si Inversion Layers
1976 StandoutNobel
Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers
1976 StandoutNobel
Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
2008
Total ionizing dose effects in MOS oxides and devices
2003 Standout
Heat-capacity study of two-dimensional electrons in GaAs/AlxGa1−xAs multiple-quantum-well structures in high magnetic fields: Spin-split Landau levels
1992 StandoutNobel
Electronic states at the silicon-silicon dioxide interface
1977
Surface photovoltage phenomena: theory, experiment, and applications
1999 Standout
Effects of stress on metal-oxide-semiconductor structures
1973
The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
1967 Standout
Design of ion-implanted MOSFET's with very small physical dimensions
1974 Standout
Two-dimensional electrical transport in GaAs-AlxGa1−xAsmultilayers at high magnetic fields
1980 StandoutNobel
MICRO-ELECTRO-MECHANICAL-SYSTEMS (MEMS) AND FLUID FLOWS
1998 Standout
Effect of a parallel magnetic field on surface quantization
1971 StandoutNobel
MOS CONDUCTANCE TECHNIQUE FOR MEASURING SURFACE STATE PARAMETERS
1965
Evidence for a phase transition in the fractional quantum Hall effect
1989 StandoutNobel
Polarization Instability in Thin Ferroelectric Films
1973
Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
1976 StandoutNobel
Image forces and the behavior of mobile positive ions in silicon dioxide
1973
Frequency Response of the Strong Inversion Layer in a Silicon Wafer
1983
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
1978 StandoutNobel
Photoemission of Electrons from Silicon into Silicon Dioxide
1965
Experimental Verification of the Charge Coupled Device Concept
1970 StandoutNobel
Blackbody radiation from hot two-dimensional electrons inAlxGa1−xAs/GaAs heterojunctions
1993 StandoutNobel
Thermally stimulated ionic conductivity of sodium in thermal SiO2
1975
FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURES
1966
Analysis of ρxx minima in surface quantum oscillations on (100) n-type silicon inversion layers
1978 StandoutNobel
Temperature Dependence of Inversion-Layer Frequency Response in Silicon
1967
The kinetic behavior of mobile ions in the Al-SiO2-Si system
1979
Experimental study of semiconductor surface conductivity
1966
Surface-state spectra from thick-oxide MOS tunnel junctions
1974
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
The resonant gate transistor
1967
Effective Mass andgFactor of Interacting Electrons in the Surface Inversion Layer of Silicon
1975 StandoutNobel
Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields
1998 StandoutNobel
Resistive switching in transition metal oxides
2008 Standout
Ferroelectric thin films: Review of materials, properties, and applications
2006 Standout
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
1971 Standout
Transport Properties of Electrons in Inverted Silicon Surfaces
1968
Broad Family of Carbon Nanoallotropes: Classification, Chemistry, and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures
2015 Standout
CHARGE COUPLED 8-BIT SHIFT REGISTER
1970 StandoutNobel
Applications of Modern Ferroelectrics
2007 StandoutScience
g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions
1982 StandoutNobel
Far infrared emission from hot electrons in Si-Inversion layers
1978 StandoutNobel
Surface quantum states in tellurium
1971 StandoutNobel
SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING
1968
Review of experimental aspects of hot electron transport in MOS structures
1978
Nobel Lecture: The invention and early history of the CCD
2010 StandoutNobel
The inception of charge-coupled devices
1976 StandoutNobel
Electrical phenomena in amorphous oxide films
1970
Silicon as a mechanical material
1982 Standout
Metal–Oxide RRAM
2012 Standout
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
1970
The invention and early history of the CCD
2011 StandoutNobel
The effects of oxide traps on the MOS capacitance
1965
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
1967
Past achievements and future challenges in the development of optically transparent electrodes
2012 Standout
Influence of Bulk and Surface Properties on Image Sensing Silicon Diode Arrays
1968
EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
1966
Graphene Versus Carbon Nanotubes in Electronic Devices
2011
Collapse of the Even-Denominator Fractional Quantum Hall Effect in Tilted Fields
1988 StandoutNobel
Limitations of the MOS capacitance method for the determination of semiconductor surface properties
1965
SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSb
1965
Theory of the electronic structure of the Si-SiO2interface
1980 StandoutNobel
Charge Coupled Semiconductor Devices
1970 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout

Works of S.R. Hofstein being referenced

Physical Limitations Associated with Some Surface Effect Devices.
1964
Stabilization of MOS devices
1967
Physical limitations on the frequency response of a semiconductor surface inversion layer
1965
An investigation of instability and charge motion in metal-silicon oxide-silicon structures
1966
Carrier mobility and current saturation in the MOS transistor
1965
The insulated gate tunnel junction triode
1965
Frequency response of the surface inversion layer in silicon
1964
The silicon insulated-gate field-effect transistor
1963
Proton and sodium transport in SiO2films
1967
SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS
1967
Minority carrier lifetime determination from inversion layer transient response
1967
TRITIUM-LABELED FIELD-INDUCED PROTON TRANSPORT IN SiO2 FILMS
1967
Rankless by CCL
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